{"id":"https://openalex.org/W2027583003","doi":"https://doi.org/10.1063/1.89023","title":"Energy levels of nitrogen isoelectronic impurities in AlxGa1\u2212xAs","display_name":"Energy levels of nitrogen isoelectronic impurities in AlxGa1\u2212xAs","publication_year":1976,"publication_date":"1976-08-01","ids":{"openalex":"https://openalex.org/W2027583003","doi":"https://doi.org/10.1063/1.89023","mag":"2027583003"},"language":"en","primary_location":{"id":"doi:10.1063/1.89023","doi":"https://doi.org/10.1063/1.89023","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.89023","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111879046","display_name":"Shun\u2010ichi Gonda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shun-ichi Gonda","raw_affiliation_strings":["Electrotechnical Laboratory, Tanashi, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Tanashi, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113603768","display_name":"Yunosuke Makita","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yunosuke Makita","raw_affiliation_strings":["Electrotechnical Laboratory, Tanashi, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Tanashi, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075224906","display_name":"Seiji Mukai","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Seiji Mukai","raw_affiliation_strings":["Electrotechnical Laboratory, Tanashi, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Tanashi, Tokyo, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031095101","display_name":"T. Tsurushima","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Toshio Tsurushima","raw_affiliation_strings":["Electrotechnical Laboratory, Tanashi, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Tanashi, Tokyo, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111598182","display_name":"H. Tanoue","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hisao Tanoue","raw_affiliation_strings":["Electrotechnical Laboratory, Tanashi, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Tanashi, Tokyo, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.0454,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.83680817,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"29","issue":"3","first_page":"196","last_page":"197"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.005200000014156103,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nitrogen-impurities","display_name":"nitrogen impurities","score":0.9070000052452087},{"id":"https://openalex.org/keywords/isoelectronic-impurities","display_name":"isoelectronic impurities","score":0.9240000247955322},{"id":"https://openalex.org/keywords/algaas","display_name":"AlGaAs","score":0.9629999995231628},{"id":"https://openalex.org/keywords/energy-levels","display_name":"energy levels","score":0.6520000100135803},{"id":"https://openalex.org/keywords/bound-states","display_name":"bound states","score":0.6460000276565552},{"id":"https://openalex.org/keywords/excitons","display_name":"excitons","score":0.8289999961853027},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"ion implantation","score":0.7820000052452087},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.796999990940094},{"id":"https://openalex.org/keywords/binding-energy","display_name":"binding energy","score":0.6729999780654907},{"id":"https://openalex.org/keywords/conduction-band-minimum","display_name":"conduction band minimum","score":0.5590000152587891},{"id":"https://openalex.org/keywords/alloy-composition","display_name":"alloy composition","score":0.5099999904632568}],"concepts":[{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.8298787474632263},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.6765733361244202},{"id":"https://openalex.org/C17729963","wikidata":"https://www.wikidata.org/wiki/Q858289","display_name":"Exciton","level":2,"score":0.6540290117263794},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.6259250044822693},{"id":"https://openalex.org/C93282013","wikidata":"https://www.wikidata.org/wiki/Q420754","display_name":"Binding energy","level":2,"score":0.6205400824546814},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.6169682741165161},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.5256487131118774},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5116053223609924},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.44066670536994934},{"id":"https://openalex.org/C27067764","wikidata":"https://www.wikidata.org/wiki/Q528769","display_name":"Conduction band","level":3,"score":0.41738882660865784},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3386427164077759},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.28812938928604126},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.21028843522071838},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13943037390708923},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.0832144021987915},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.89023","doi":"https://doi.org/10.1063/1.89023","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.89023","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1976514755","https://openalex.org/W1982330644","https://openalex.org/W1994194498","https://openalex.org/W2016597714","https://openalex.org/W2034720896","https://openalex.org/W2049503503","https://openalex.org/W3126387472"],"related_works":["https://openalex.org/W1982330644","https://openalex.org/W2010470940","https://openalex.org/W2049503503","https://openalex.org/W2085368200","https://openalex.org/W2010161764","https://openalex.org/W2038144611","https://openalex.org/W1989099397","https://openalex.org/W2038814865","https://openalex.org/W2066978361","https://openalex.org/W2306737958"],"abstract_inverted_index":{"Energy":[0],"levels":[1],"of":[2,43],"nitrogen":[3,30],"isoelectronic":[4],"impurities":[5,31],"in":[6],"AlxGa1\u2212xAs":[7],"doped":[8],"with":[9,29,51],"1018":[10],"N":[11],"cm\u22123":[12],"by":[13],"ion":[14],"implantation":[15],"were":[16],"determined":[17],"from":[18],"the":[19,35,40,44,48],"photoluminescence":[20],"measurements":[21],"at":[22],"2":[23],"\u00b0K.":[24],"Three":[25],"bound":[26,46],"states":[27,49],"associated":[28],"are":[32],"situated":[33],"below":[34],"X1":[36],"conduction-band":[37],"minima":[38],"and":[39],"binding":[41],"energies":[42],"excitons":[45],"to":[47],"decrease":[50],"increasing":[52],"composition":[53],"ratio":[54],"x.":[55]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}