{"id":"https://openalex.org/W2027042002","doi":"https://doi.org/10.1063/1.2217106","title":"Young\u2019s modulus, Poisson\u2019s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon","display_name":"Young\u2019s modulus, Poisson\u2019s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon","publication_year":2006,"publication_date":"2006-07-15","ids":{"openalex":"https://openalex.org/W2027042002","doi":"https://doi.org/10.1063/1.2217106","mag":"2027042002"},"language":"en","primary_location":{"id":"doi:10.1063/1.2217106","doi":"https://doi.org/10.1063/1.2217106","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2217106","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084621240","display_name":"M. A. Moram","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"M. A. Moram","raw_affiliation_strings":["University of Cambridge Department of Materials Science and Metallurgy, , Pembroke Street, Cambridge CB2 3QZ, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Cambridge Department of Materials Science and Metallurgy, , Pembroke Street, Cambridge CB2 3QZ, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054968582","display_name":"Z. H. Barber","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Z. H. Barber","raw_affiliation_strings":["University of Cambridge Department of Materials Science and Metallurgy, , Pembroke Street, Cambridge CB2 3QZ, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Cambridge Department of Materials Science and Metallurgy, , Pembroke Street, Cambridge CB2 3QZ, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020842649","display_name":"Colin John Humphreys","orcid":"https://orcid.org/0000-0001-5053-3380","observed_orcids":["https://orcid.org/0000-0001-5053-3380"]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"C. J. Humphreys","raw_affiliation_strings":["University of Cambridge Department of Materials Science and Metallurgy, , Pembroke Street, Cambridge CB2 3QZ, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Cambridge Department of Materials Science and Metallurgy, , Pembroke Street, Cambridge CB2 3QZ, United Kingdom","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111750719","display_name":"Timothy B. Joyce","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146655781","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96","country_code":"GB","type":"education","lineage":["https://openalex.org/I146655781"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"T. B. Joyce","raw_affiliation_strings":["University of Liverpool Department of Engineering, Materials Science and Engineering, , Liverpool L69 3GH, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Liverpool Department of Engineering, Materials Science and Engineering, , Liverpool L69 3GH, United Kingdom","institution_ids":["https://openalex.org/I146655781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5015486428","display_name":"Paul Raymond Chalker","orcid":"https://orcid.org/0000-0002-2295-6332","observed_orcids":["https://orcid.org/0000-0002-2295-6332"]},"institutions":[{"id":"https://openalex.org/I146655781","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96","country_code":"GB","type":"education","lineage":["https://openalex.org/I146655781"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"P. R. Chalker","raw_affiliation_strings":["University of Liverpool Department of Engineering, Materials Science and Engineering, , Liverpool L69 3GH, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Liverpool Department of Engineering, Materials Science and Engineering, , Liverpool L69 3GH, United Kingdom","institution_ids":["https://openalex.org/I146655781"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":4.7983,"has_fulltext":false,"cited_by_count":55,"citation_normalized_percentile":{"value":0.94517251,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"100","issue":"2","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00139999995008111,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0013000000035390258,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/scandium-nitride","display_name":"scandium nitride","score":0.9449999928474426},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.9020000100135803},{"id":"https://openalex.org/keywords/young-s-modulus","display_name":"Young's modulus","score":0.8880000114440918},{"id":"https://openalex.org/keywords/poisson-s-ratio","display_name":"Poisson's ratio","score":0.9909999966621399},{"id":"https://openalex.org/keywords/residual-stress","display_name":"residual stress","score":0.9869999885559082},{"id":"https://openalex.org/keywords/residual-strain","display_name":"residual strain","score":0.7459999918937683},{"id":"https://openalex.org/keywords/silicon-epitaxial-growth","display_name":"epitaxial growth on silicon","score":0.8240000009536743},{"id":"https://openalex.org/keywords/111-orientation","display_name":"(111) orientation","score":0.925000011920929},{"id":"https://openalex.org/keywords/twinning","display_name":"twinning","score":0.7289999723434448},{"id":"https://openalex.org/keywords/lattice-parameters","display_name":"lattice parameters","score":0.8199999928474426},{"id":"https://openalex.org/keywords/wafer-curvature","display_name":"wafer curvature","score":0.8650000095367432},{"id":"https://openalex.org/keywords/tensile-stress","display_name":"tensile stress","score":0.6729999780654907},{"id":"https://openalex.org/keywords/compressive-stress","display_name":"compressive stress","score":0.7940000295639038},{"id":"https://openalex.org/keywords/ammonia-nitrogen-source","display_name":"ammonia nitrogen source","score":0.5640000104904175},{"id":"https://openalex.org/keywords/columnar-morphology","display_name":"columnar morphology","score":0.753000020980835}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7633044719696045},{"id":"https://openalex.org/C551831248","wikidata":"https://www.wikidata.org/wiki/Q713","display_name":"Scandium","level":2,"score":0.6355547308921814},{"id":"https://openalex.org/C37292000","wikidata":"https://www.wikidata.org/wiki/Q1257918","display_name":"Residual stress","level":2,"score":0.6281521320343018},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.568711519241333},{"id":"https://openalex.org/C149505630","wikidata":"https://www.wikidata.org/wiki/Q190453","display_name":"Poisson's ratio","level":3,"score":0.5569380521774292},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5406979322433472},{"id":"https://openalex.org/C132612359","wikidata":"https://www.wikidata.org/wiki/Q625641","display_name":"Lattice constant","level":3,"score":0.5108992457389832},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.4918365478515625},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4762035608291626},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.4437628388404846},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.4424854516983032},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.44164830446243286},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.4364648759365082},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.42989420890808105},{"id":"https://openalex.org/C196029304","wikidata":"https://www.wikidata.org/wiki/Q2091584","display_name":"Young's modulus","level":2,"score":0.4276611804962158},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.28993189334869385},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.18657004833221436},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17433667182922363},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.16469508409500122},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16388782858848572},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11833372712135315},{"id":"https://openalex.org/C100906024","wikidata":"https://www.wikidata.org/wiki/Q205692","display_name":"Poisson distribution","level":2,"score":0.08771196007728577},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.2217106","doi":"https://doi.org/10.1063/1.2217106","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2217106","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:www.repository.cam.ac.uk:1810/236787","doi":null,"is_oa":false,"landing_page_url":"http://www.dspace.cam.ac.uk/handle/1810/236787","pdf_url":null,"source":{"id":"https://openalex.org/S4306401777","display_name":"Apollo (University of Cambridge)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I241749","host_organization_name":"University of Cambridge","host_organization_lineage":["https://openalex.org/I241749"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1492945524","https://openalex.org/W1527914599","https://openalex.org/W1613484687","https://openalex.org/W1626099979","https://openalex.org/W2014413280","https://openalex.org/W2020464467","https://openalex.org/W2032845589","https://openalex.org/W2035817882","https://openalex.org/W2049884947","https://openalex.org/W2050147207","https://openalex.org/W2050283932","https://openalex.org/W2050694740","https://openalex.org/W2053131715","https://openalex.org/W2066874036","https://openalex.org/W2067150088","https://openalex.org/W2086933933","https://openalex.org/W2092638929","https://openalex.org/W2093596305","https://openalex.org/W2098548519","https://openalex.org/W2480651031"],"related_works":["https://openalex.org/W2009995672","https://openalex.org/W1971033625","https://openalex.org/W2912510916","https://openalex.org/W7136280358","https://openalex.org/W2744754986","https://openalex.org/W2902927132","https://openalex.org/W2050694740","https://openalex.org/W3093691767","https://openalex.org/W7170036666","https://openalex.org/W4285130616"],"abstract_inverted_index":{"Epitaxial":[0],"scandium":[1],"nitride":[2],"films":[3,45,66],"(225nm":[4],"thick)":[5],"were":[6,87,93,115],"grown":[7,67],"on":[8,145],"silicon":[9],"by":[10,160],"molecular":[11],"beam":[12],"epitaxy,":[13],"using":[14,78,90],"ammonia":[15],"as":[16,76],"a":[17,47],"reactive":[18],"nitrogen":[19],"source.":[20],"The":[21,44,60],"main":[22],"crystallographic":[23],"orientation":[24],"of":[25,64,100,129],"ScN":[26,65,101,167],"with":[27,50,119],"respect":[28],"to":[29,54,73,95,109,123,135,153],"Si":[30,171],"is":[31,38,107,133],"(111)ScN\u2016(111)Si":[32],"and":[33,84,92,117,149,169,173],"[1\u201310]ScN\u2016[0\u201311]Si;":[34],"however,":[35],"some":[36],"twinning":[37],"also":[39],"present":[40],"in":[41],"the":[42,97,103,120,125,130,156,161,166,170],"films.":[43],"displayed":[46],"columnar":[48],"morphology":[49],"rough":[51],"surfaces,":[52],"due":[53,152],"low":[55],"adatom":[56],"mobility":[57],"during":[58,178],"growth.":[59,179],"strain-free":[61],"lattice":[62],"parameter":[63],"under":[68],"optimized":[69],"conditions":[70],"was":[71],"found":[72,108,134],"be":[74,110,136],"4.5047\u00b10.0005\u00c5,":[75],"determined":[77],"high-resolution":[79],"x-ray":[80],"diffraction":[81],"(HRXRD).":[82],"In-plane":[83],"out-of-plane":[85],"strains":[86],"subsequently":[88],"evaluated":[89],"HRXRD":[91],"used":[94],"determine":[96,124],"Poisson":[98],"ratio":[99],"along":[102],"\u27e8111\u27e9":[104],"direction,":[105],"which":[106,132],"0.188\u00b10.005.":[111],"Wafer":[112],"curvature":[113],"measurements":[114],"made":[116],"combined":[118],"strain":[121],"information":[122],"average":[126],"Young\u2019s":[127],"modulus":[128],"films,":[131],"270\u00b125GPa.":[137],"Residual":[138],"film":[139,146,150,168],"stresses":[140,176],"ranged":[141],"from":[142],"\u22121to1GPa":[143],"(depending":[144],"growth":[147],"temperature":[148],"thickness)":[151],"competition":[154],"between":[155,165],"tensile":[157],"stress":[158],"(induced":[159],"differential":[162],"thermal":[163],"contraction":[164],"substrate)":[172],"intrinsic":[174],"compressive":[175],"generated":[177]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}