{"id":"https://openalex.org/W2026779331","doi":"https://doi.org/10.1063/1.107377","title":"Low-threshold InGaAs strained-layer quantum-well lasers (\u03bb=0.98 \u03bcm) with GaInP cladding layers and mass-transported buried heterostructure","display_name":"Low-threshold InGaAs strained-layer quantum-well lasers (\u03bb=0.98 \u03bcm) with GaInP cladding layers and mass-transported buried heterostructure","publication_year":1992,"publication_date":"1992-01-06","ids":{"openalex":"https://openalex.org/W2026779331","doi":"https://doi.org/10.1063/1.107377","mag":"2026779331"},"language":"en","primary_location":{"id":"doi:10.1063/1.107377","doi":"https://doi.org/10.1063/1.107377","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.107377","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111860353","display_name":"Z. L. Liau","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Z. L. Liau","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024950575","display_name":"Susan C. Palmateer","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. C. Palmateer","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111708753","display_name":"Steven H. Groves","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. H. Groves","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019867221","display_name":"J. N. Walpole","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. N. Walpole","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005966864","display_name":"L.J. Missaggia","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. J. Missaggia","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":19.0056,"has_fulltext":false,"cited_by_count":87,"citation_normalized_percentile":{"value":0.99777062,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"60","issue":"1","first_page":"6","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.7470999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.7470999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.23649999499320984,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.005400000140070915,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/buried-heterostructure-lasers","display_name":"buried heterostructure lasers","score":0.7580000162124634},{"id":"https://openalex.org/keywords/mass-transfer","display_name":"mass transfer","score":0.7580000162124634},{"id":"https://openalex.org/keywords/low-threshold-current-density","display_name":"low threshold current density","score":0.7250000238418579},{"id":"https://openalex.org/keywords/980-nm-laser","display_name":"980 nm laser","score":0.7310000061988831},{"id":"https://openalex.org/keywords/differential-quantum-efficiency","display_name":"differential quantum efficiency","score":0.734000027179718}],"concepts":[{"id":"https://openalex.org/C36456112","wikidata":"https://www.wikidata.org/wiki/Q288064","display_name":"Cladding (metalworking)","level":2,"score":0.8223127126693726},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.8099657893180847},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.730222225189209},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7045459747314453},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.6962096691131592},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.6024652719497681},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5703362226486206},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.48756760358810425},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.45097818970680237},{"id":"https://openalex.org/C205507967","wikidata":"https://www.wikidata.org/wiki/Q900625","display_name":"Quantum efficiency","level":2,"score":0.41920602321624756},{"id":"https://openalex.org/C179764930","wikidata":"https://www.wikidata.org/wiki/Q3509437","display_name":"Effective mass (spring\u2013mass system)","level":2,"score":0.4139994978904724},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.252431720495224},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.23608016967773438},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1154567301273346},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09968158602714539},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06512811779975891},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.107377","doi":"https://doi.org/10.1063/1.107377","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.107377","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1965786257","https://openalex.org/W1968264701","https://openalex.org/W1980863303","https://openalex.org/W1986389723","https://openalex.org/W2024042984","https://openalex.org/W2030446582","https://openalex.org/W2031894492","https://openalex.org/W2072606697","https://openalex.org/W2076300090","https://openalex.org/W2091951330","https://openalex.org/W2141389586"],"related_works":["https://openalex.org/W2091433147","https://openalex.org/W1979266743","https://openalex.org/W2001417963","https://openalex.org/W2121571292","https://openalex.org/W2091443751","https://openalex.org/W2108280642","https://openalex.org/W156336222","https://openalex.org/W1763419150","https://openalex.org/W2007861101","https://openalex.org/W2161833781"],"abstract_inverted_index":{"Buried-heterostructure":[0],"quantum-well":[1],"lasers":[2],"fabricated":[3],"by":[4,14],"mass":[5],"transport":[6],"are":[7,28],"reported":[8],"for":[9,30],"In0.18Ga0.82As/GaAs/Ga0.5In0.5P":[10],"strained-layer":[11],"structures":[12],"grown":[13],"atmospheric":[15],"pressure":[16],"organometallic":[17],"vapor-phase":[18],"epitaxy.":[19],"Threshold":[20],"current":[21],"densities":[22],"as":[23,25,39,41,48,50],"low":[24,40],"85":[26],"A/cm2":[27],"measured":[29],"broad-stripe":[31],"lasers,":[32],"and":[33,44],"buried-stripe":[34],"devices":[35],"show":[36],"threshold":[37],"currents":[38],"3":[42],"mA":[43],"differential":[45],"quantum":[46],"efficiencies":[47],"high":[49],"34%":[51],"per":[52],"facet":[53],"without":[54],"coatings.":[55]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}