{"id":"https://openalex.org/W2024939870","doi":"https://doi.org/10.1143/jjap.41.3646","title":"High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor","display_name":"High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor","publication_year":2002,"publication_date":"2002-06-15","ids":{"openalex":"https://openalex.org/W2024939870","doi":"https://doi.org/10.1143/jjap.41.3646","mag":"2024939870"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.41.3646","doi":"https://doi.org/10.1143/jjap.41.3646","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.41.3646","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.41.3646/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.41.3646/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110107909","display_name":"Seiichiro Higashi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Seiichiro Higashi","raw_affiliation_strings":["Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057348724","display_name":"Daisuke Abe","orcid":"https://orcid.org/0000-0003-2238-2532","observed_orcids":["https://orcid.org/0000-0003-2238-2532"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Daisuke Abe","raw_affiliation_strings":["Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055538996","display_name":"Yasushi Hiroshima","orcid":"https://orcid.org/0000-0002-1216-5086","observed_orcids":["https://orcid.org/0000-0002-1216-5086"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yasushi Hiroshima","raw_affiliation_strings":["Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kazuyuki Miyashita","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kazuyuki Miyashita","raw_affiliation_strings":["Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035220397","display_name":"Takahiro Kawamura","orcid":"https://orcid.org/0000-0002-6024-0634","observed_orcids":["https://orcid.org/0000-0002-6024-0634"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takahiro Kawamura","raw_affiliation_strings":["Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102024223","display_name":"Satoshi Inoue","orcid":"https://orcid.org/0000-0003-1820-2703","observed_orcids":["https://orcid.org/0000-0003-1820-2703"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Satoshi Inoue","raw_affiliation_strings":["Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108742071","display_name":"Tatsuya Shimoda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tatsuya Shimoda","raw_affiliation_strings":["Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":3.095,"has_fulltext":true,"cited_by_count":42,"citation_normalized_percentile":{"value":0.90894682,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"41","issue":"Part 1, No. 6A","first_page":"3646","last_page":"3650"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9854000210762024,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9854000210762024,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00800000037997961,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.001500000013038516,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/si-sio2-interface","display_name":"Si/SiO2 interface","score":0.9570000171661377},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.8349999785423279},{"id":"https://openalex.org/keywords/polycrystalline-silicon-thin-film-transistors","display_name":"polycrystalline silicon thin-film transistors","score":0.9779999852180481},{"id":"https://openalex.org/keywords/low-temperature-processing","display_name":"low-temperature processing","score":0.9179999828338623},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.7730000019073486},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.9760000109672546},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.9150000214576721},{"id":"https://openalex.org/keywords/trap-states","display_name":"trap states","score":0.7329999804496765}],"concepts":[{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.7862906455993652},{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.7472182512283325},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7343192100524902},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.6516411304473877},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6359457969665527},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5967836380004883},{"id":"https://openalex.org/C38347018","wikidata":"https://www.wikidata.org/wiki/Q905958","display_name":"Plasma-enhanced chemical vapor deposition","level":3,"score":0.5436432361602783},{"id":"https://openalex.org/C175361016","wikidata":"https://www.wikidata.org/wiki/Q245591","display_name":"Electron cyclotron resonance","level":3,"score":0.4766883850097656},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4637954831123352},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.46323511004447937},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.449463427066803},{"id":"https://openalex.org/C31500677","wikidata":"https://www.wikidata.org/wiki/Q4533278","display_name":"Field effect","level":2,"score":0.4336668848991394},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3236900568008423},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2826809287071228},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.2712228298187256},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.22308436036109924},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1172475814819336},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.41.3646","doi":"https://doi.org/10.1143/jjap.41.3646","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.41.3646","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.41.3646/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.41.3646","doi":"https://doi.org/10.1143/jjap.41.3646","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.41.3646","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.41.3646/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2024939870.pdf","grobid_xml":"https://content.openalex.org/works/W2024939870.grobid-xml"},"referenced_works_count":1,"referenced_works":["https://openalex.org/W2003980178"],"related_works":["https://openalex.org/W2065950769","https://openalex.org/W2316426067","https://openalex.org/W2079779362","https://openalex.org/W2030009175","https://openalex.org/W2090088559","https://openalex.org/W2104318371","https://openalex.org/W2045486294","https://openalex.org/W2119546662","https://openalex.org/W2095483260","https://openalex.org/W2036715205"],"abstract_inverted_index":{"Improvement":[0],"of":[1,13,33,42,81,90,100,116,122,144],"SiO":[2,25,162],"2":[3,26,107,163],"/Si":[4,164],"interface":[5,34,165],"quality":[6],"and":[7,47,98,125,137],"its":[8],"effect":[9],"on":[10],"the":[11,31,120,142,145],"performance":[12],"low-temperature-processed":[14],"polycrystalline":[15],"silicon":[16],"thin-film":[17],"transistors":[18],"(poly-Si":[19],"TFTs)":[20],"are":[21,166],"investigated.":[22],"Two":[23],"gate":[24],"formation":[27],"conditions":[28],"for":[29,158,168],"realizing":[30],"density":[32],"states":[35],"(":[36],"D":[37,77],"it":[38,78],")":[39],"at":[40],"mid-gap":[41],"1.4":[43],"\u00d7":[44,49],"10":[45,50,51],"11":[46],"4.1":[48],"cm":[52,106],"-2":[53],"eV":[54],"-1":[55,109,111],"were":[56,112],"applied":[57],"to":[58,86,95,104],"a":[59,131,160],"425\u00b0C":[60],"TFT":[61,117,147],"fabrication":[62],"process":[63,156],"using":[64],"electron":[65],"cyclotron":[66],"resonance":[67],"(ECR)":[68],"plasma":[69],"enhanced":[70],"chemical":[71],"vapor":[72],"deposition":[73],"(PECVD).":[74],"By":[75],"reducing":[76],",":[79],"reduction":[80,89],"threshold":[82,135],"voltage":[83,136],"from":[84,93,102],"1.97":[85],"1.12":[87],"V,":[88],"sub-threshold":[91,138],"swing":[92],"303":[94],"250":[96],"mV/decade":[97],"increase":[99],"mobility":[101,143],"196":[103],"309":[105],"V":[108],"s":[110],"observed.":[113],"The":[114,151],"analysis":[115],"characteristics":[118],"indicated":[119],"decrease":[121],"both":[123],"deep":[124],"shallow":[126],"level":[127],"trap":[128],"states.":[129],"As":[130],"result,":[132],"not":[133],"only":[134],"swing,":[139],"but":[140],"also":[141],"poly-Si":[146,171],"was":[148],"significantly":[149],"improved.":[150],"results":[152],"indicate":[153],"that":[154],"low-temperature":[155],"technologies":[157],"forming":[159],"high-quality":[161],"important":[167],"next-generation":[169],"high-performance":[170],"TFTs.":[172]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":4}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}