{"id":"https://openalex.org/W2024680432","doi":"https://doi.org/10.1016/j.physb.2009.07.156","title":"Thermal annealing effects on I\u2013V\u2013T characteristics of sputtered Cr/n-GaAs diodes","display_name":"Thermal annealing effects on I\u2013V\u2013T characteristics of sputtered Cr/n-GaAs diodes","publication_year":2009,"publication_date":"2009-07-22","ids":{"openalex":"https://openalex.org/W2024680432","doi":"https://doi.org/10.1016/j.physb.2009.07.156","mag":"2024680432"},"language":"en","primary_location":{"id":"doi:10.1016/j.physb.2009.07.156","doi":"https://doi.org/10.1016/j.physb.2009.07.156","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.physb.2009.07.156","pdf_url":null,"source":{"id":"https://openalex.org/S34296711","display_name":"Physica B Condensed Matter","issn_l":"0921-4526","issn":["0921-4526","1873-2135"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Physica B: Condensed Matter","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056296200","display_name":"H. Korkut","orcid":"https://orcid.org/0000-0002-6459-996X","observed_orcids":["https://orcid.org/0000-0002-6459-996X"]},"institutions":[{"id":"https://openalex.org/I64134780","display_name":"Atat\u00fcrk University","ror":"https://ror.org/03je5c526","country_code":"TR","type":"education","lineage":["https://openalex.org/I64134780"]}],"countries":["TR"],"is_corresponding":false,"raw_author_name":"H. Korkut","raw_affiliation_strings":["Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey","Department of Physics, Faculty of Sciences, Atat\u00fcrk University, 25240, Erzurum, Turkey"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey","institution_ids":["https://openalex.org/I64134780"]},{"raw_affiliation_string":"Department of Physics, Faculty of Sciences, Atat\u00fcrk University, 25240, Erzurum, Turkey","institution_ids":["https://openalex.org/I64134780"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055217359","display_name":"Nezir Y\u0131ld\u0131r\u0131m","orcid":"https://orcid.org/0000-0002-1864-2269","observed_orcids":["https://orcid.org/0000-0002-1864-2269"]},"institutions":[{"id":"https://openalex.org/I147699246","display_name":"Bing\u00f6l University","ror":"https://ror.org/03hx84x94","country_code":"TR","type":"education","lineage":["https://openalex.org/I147699246"]}],"countries":["TR"],"is_corresponding":false,"raw_author_name":"N. Y\u0131ld\u0131r\u0131m","raw_affiliation_strings":["Department of Physics, Faculty of Sciences and Arts, Bing\u00f6l University, Bing\u00f6l, Turkey"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Faculty of Sciences and Arts, Bing\u00f6l University, Bing\u00f6l, Turkey","institution_ids":["https://openalex.org/I147699246"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062422876","display_name":"Abdulmecit Turut","orcid":"https://orcid.org/0000-0002-4664-4528","observed_orcids":["https://orcid.org/0000-0002-4664-4528"]},"institutions":[{"id":"https://openalex.org/I64134780","display_name":"Atat\u00fcrk University","ror":"https://ror.org/03je5c526","country_code":"TR","type":"education","lineage":["https://openalex.org/I64134780"]}],"countries":["TR"],"is_corresponding":true,"raw_author_name":"A. Turut","raw_affiliation_strings":["Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey","Department of Physics, Faculty of Sciences, Atat\u00fcrk University, 25240, Erzurum, Turkey"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey","institution_ids":["https://openalex.org/I64134780"]},{"raw_affiliation_string":"Department of Physics, Faculty of Sciences, Atat\u00fcrk University, 25240, Erzurum, Turkey","institution_ids":["https://openalex.org/I64134780"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5062422876"],"corresponding_institution_ids":["https://openalex.org/I64134780"],"apc_list":{"value":3250,"currency":"USD","value_usd":3250},"apc_paid":null,"fwci":0.5398,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.59425235,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"404","issue":"21","first_page":"4039","last_page":"4044"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13418","display_name":"Photocathodes and Microchannel Plates","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3105","display_name":"Instrumentation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.8849999904632568},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.9620000123977661},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.9210000038146973},{"id":"https://openalex.org/keywords/temperature-dependent-i-v-characteristics","display_name":"temperature-dependent I-V characteristics","score":0.7649999856948853},{"id":"https://openalex.org/keywords/ideality-factor","display_name":"ideality factor","score":0.9399999976158142},{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.9330000281333923},{"id":"https://openalex.org/keywords/richardson-constant","display_name":"Richardson constant","score":0.968999981880188},{"id":"https://openalex.org/keywords/interface-quality","display_name":"interface quality","score":0.5920000076293945},{"id":"https://openalex.org/keywords/low-temperature-behavior","display_name":"low-temperature behavior","score":0.5099999904632568}],"concepts":[{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.8353298306465149},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.8144422769546509},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7598137855529785},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6606561541557312},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5301935076713562},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.5280854105949402},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.48603516817092896},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38425442576408386},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.22281241416931152},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1095641553401947},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.056534379720687866},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.physb.2009.07.156","doi":"https://doi.org/10.1016/j.physb.2009.07.156","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.physb.2009.07.156","pdf_url":null,"source":{"id":"https://openalex.org/S34296711","display_name":"Physica B Condensed Matter","issn_l":"0921-4526","issn":["0921-4526","1873-2135"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Physica B: Condensed Matter","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322626","display_name":"T\u00fcrkiye Bilimsel ve Teknolojik Ara\u015ft\u0131rma Kurumu","ror":"https://ror.org/04w9kkr77"},{"id":"https://openalex.org/F4320323027","display_name":"Atat\u00fcrk \u00dcniversitesi","ror":"https://ror.org/03je5c526"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":46,"referenced_works":["https://openalex.org/W1566967958","https://openalex.org/W1647371685","https://openalex.org/W1654552911","https://openalex.org/W1659204560","https://openalex.org/W1970075184","https://openalex.org/W1973470034","https://openalex.org/W1998682195","https://openalex.org/W1999158009","https://openalex.org/W2006064064","https://openalex.org/W2009561019","https://openalex.org/W2017643039","https://openalex.org/W2022122395","https://openalex.org/W2024609819","https://openalex.org/W2025954999","https://openalex.org/W2026379861","https://openalex.org/W2030752519","https://openalex.org/W2033125855","https://openalex.org/W2040629469","https://openalex.org/W2041601316","https://openalex.org/W2044116730","https://openalex.org/W2048441827","https://openalex.org/W2052710011","https://openalex.org/W2054744036","https://openalex.org/W2054985204","https://openalex.org/W2055220909","https://openalex.org/W2059028052","https://openalex.org/W2059891927","https://openalex.org/W2060838914","https://openalex.org/W2061700313","https://openalex.org/W2062894079","https://openalex.org/W2063139328","https://openalex.org/W2065085059","https://openalex.org/W2067642813","https://openalex.org/W2069591696","https://openalex.org/W2072007054","https://openalex.org/W2073330239","https://openalex.org/W2077958625","https://openalex.org/W2079570925","https://openalex.org/W2080166111","https://openalex.org/W2084792046","https://openalex.org/W2090450046","https://openalex.org/W2095338218","https://openalex.org/W2136215952","https://openalex.org/W2138248859","https://openalex.org/W3022448274","https://openalex.org/W3147289055"],"related_works":["https://openalex.org/W1984640517","https://openalex.org/W2051972385","https://openalex.org/W1965599246","https://openalex.org/W2022122395","https://openalex.org/W2735320988","https://openalex.org/W2212647763","https://openalex.org/W2021012527","https://openalex.org/W2345230403","https://openalex.org/W2159445071","https://openalex.org/W2170063272"],"abstract_inverted_index":null,"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":2}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}