{"id":"https://openalex.org/W2024112596","doi":"https://doi.org/10.1149/1.1838121","title":"Low\u2010Temperature Polycrystalline Silicon Deposition by Very High Frequency Sputtering Using Ar and H 2","display_name":"Low\u2010Temperature Polycrystalline Silicon Deposition by Very High Frequency Sputtering Using Ar and H 2","publication_year":1997,"publication_date":"1997-11-01","ids":{"openalex":"https://openalex.org/W2024112596","doi":"https://doi.org/10.1149/1.1838121","mag":"2024112596"},"language":"en","primary_location":{"id":"doi:10.1149/1.1838121","doi":"https://doi.org/10.1149/1.1838121","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.1838121","pdf_url":"https://iopscience.iop.org/article/10.1149/1.1838121/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/1.1838121/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Y. H. Jang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. H. Jang","raw_affiliation_strings":["Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009241228","display_name":"W. S. Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"W. S. Park","raw_affiliation_strings":["Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029457690","display_name":"Motonobu Takeya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Takeya","raw_affiliation_strings":["Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048589740","display_name":"G. S. Jong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"G. S. Jong","raw_affiliation_strings":["Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan","institution_ids":["https://openalex.org/I201537933"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110826182","display_name":"T. Ohmi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Ohmi","raw_affiliation_strings":["Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Graduate School of Engineering, Tohoku University, Aza\u2010Aoba, Aramaki, Aoba\u2010ku, Sendai 980\u201077, Japan","institution_ids":["https://openalex.org/I201537933"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I201537933"],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":1.4423,"has_fulltext":true,"cited_by_count":12,"citation_normalized_percentile":{"value":0.79355902,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":93},"biblio":{"volume":"144","issue":"11","first_page":"3973","last_page":"3978"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.5913000106811523,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.5913000106811523,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.1754000037908554,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.11699999868869781,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/polycrystalline-silicon-thin-films","display_name":"polycrystalline silicon thin films","score":0.9390000104904175},{"id":"https://openalex.org/keywords/low-temperature-deposition","display_name":"low-temperature deposition","score":0.8029999732971191},{"id":"https://openalex.org/keywords/hydrogen-partial-pressure","display_name":"hydrogen partial pressure","score":0.9010000228881836},{"id":"https://openalex.org/keywords/electrical-resistivity","display_name":"electrical resistivity","score":0.7269999980926514},{"id":"https://openalex.org/keywords/crystallization","display_name":"crystallization","score":0.8489999771118164},{"id":"https://openalex.org/keywords/ion-flux","display_name":"ion flux","score":0.9089999794960022},{"id":"https://openalex.org/keywords/silica-substrate","display_name":"silica substrate","score":0.6100000143051147}],"concepts":[{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.7526927590370178},{"id":"https://openalex.org/C68463220","wikidata":"https://www.wikidata.org/wiki/Q27165","display_name":"Partial pressure","level":3,"score":0.7086927890777588},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6890808939933777},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.6472253203392029},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.6371439099311829},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6042917370796204},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5706692337989807},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5402218699455261},{"id":"https://openalex.org/C80086925","wikidata":"https://www.wikidata.org/wiki/Q3960533","display_name":"Nanocrystalline silicon","level":5,"score":0.4940829575061798},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.4863222539424896},{"id":"https://openalex.org/C47908070","wikidata":"https://www.wikidata.org/wiki/Q900515","display_name":"Grain boundary","level":3,"score":0.47379085421562195},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.47034862637519836},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.468703955411911},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.44208744168281555},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.4196663200855255},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4006369113922119},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.2340484857559204},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1950751543045044},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.19167596101760864},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1844908595085144},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1799163520336151},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.17264890670776367},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.1634834110736847},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.13483774662017822},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12149709463119507},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.11431306600570679},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/1.1838121","doi":"https://doi.org/10.1149/1.1838121","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.1838121","pdf_url":"https://iopscience.iop.org/article/10.1149/1.1838121/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1149/1.1838121","doi":"https://doi.org/10.1149/1.1838121","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.1838121","pdf_url":"https://iopscience.iop.org/article/10.1149/1.1838121/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2024112596.pdf","grobid_xml":"https://content.openalex.org/works/W2024112596.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2015955738","https://openalex.org/W2611666094","https://openalex.org/W4248654806","https://openalex.org/W2055370671","https://openalex.org/W2161171727","https://openalex.org/W1916494142","https://openalex.org/W2070511833","https://openalex.org/W2085022405","https://openalex.org/W4237803620","https://openalex.org/W2048661338"],"abstract_inverted_index":{"Polycrystalline":[0],"silicon":[1,8],"thin":[2],"films":[3,33],"have":[4],"been":[5],"deposited":[6],"on":[7,94],"oxide":[9],"at":[10,48],"300\u00b0C":[11],"by":[12,36],"very":[13],"high":[14],"frequency":[15],"(182.5":[16],"MHz)":[17],"sputtering":[18],"using":[19],"an":[20,26,103],"Ar":[21],"and":[22,25,41],"gas":[23],"mixture":[24],"arsenic\u2010doped":[27],"Si":[28],"wafer":[29],"target.":[30],"Characteristics":[31],"of":[32,43,63,75,110],"are":[34],"affected":[35],"the":[37,60,64,89,95,108],"hydrogen":[38,52,61,100],"partial":[39,53,101],"pressure,":[40,102],"polysilicon":[42],"lowest":[44],"resistivity":[45,68],"is":[46,66,71,85],"obtained":[47],"20":[49],"to":[50,73,81],"30%":[51],"pressure":[54],"ratio.":[55],"We":[56],"found":[57,87],"that":[58,88],"as":[59],"content":[62],"film":[65],"reduced,":[67],"decreases.":[69],"This":[70],"attributed":[72],"reduction":[74],"amorphous":[76],"grain":[77],"boundary":[78],"regions":[79],"due":[80],"better":[82],"crystallization.":[83],"It":[84],"also":[86],"normalized":[90],"ion":[91],"flux":[92],"incident":[93],"growing":[96],"surface":[97],"varies":[98],"with":[99],"important":[104],"parameter":[105],"for":[106],"determining":[107],"properties":[109],"as\u2010deposited":[111],"polysilicon.":[112]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}