{"id":"https://openalex.org/W2023988004","doi":"https://doi.org/10.1109/ted.2011.2125965","title":"Scaling SOI MESFETs to 150-nm CMOS Technologies","display_name":"Scaling SOI MESFETs to 150-nm CMOS Technologies","publication_year":2011,"publication_date":"2011-05-13","ids":{"openalex":"https://openalex.org/W2023988004","doi":"https://doi.org/10.1109/ted.2011.2125965","mag":"2023988004"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2011.2125965","doi":"https://doi.org/10.1109/ted.2011.2125965","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2011.2125965","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077717119","display_name":"William Lepkowski","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"William Lepkowski","raw_affiliation_strings":["School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]},{"raw_affiliation_string":"[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067251497","display_name":"M. Reza Ghajar","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Reza Ghajar","raw_affiliation_strings":["School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]},{"raw_affiliation_string":"[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003828510","display_name":"Seth J. Wilk","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2801653624","display_name":"Fountain Way","ror":"https://ror.org/01xqpsp32","country_code":"GB","type":"healthcare","lineage":["https://openalex.org/I160648776","https://openalex.org/I2801653624"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Seth J. Wilk","raw_affiliation_strings":["SJT Micropower, Inc., Fountain Hills, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SJT Micropower, Inc., Fountain Hills, AZ, USA","institution_ids":["https://openalex.org/I2801653624"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021379960","display_name":"Nicholas Summers","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nicholas Summers","raw_affiliation_strings":["School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]},{"raw_affiliation_string":"[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006951352","display_name":"TREVOR J. THORNTON","orcid":"https://orcid.org/0000-0003-1220-5399","observed_orcids":["https://orcid.org/0000-0003-1220-5399"]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Trevor J. Thornton","raw_affiliation_strings":["School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Computer, Energy Engineering, Center of Solid State Electronics Research, Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]},{"raw_affiliation_string":"[Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA]","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5001639284","display_name":"Paul S. Fechner","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Paul S. Fechner","raw_affiliation_strings":["Honeywell Aerospace-Plymouth, Plymouth, MN, USA","Honeywell Aerosp. - Plymouth, Plymouth, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Honeywell Aerospace-Plymouth, Plymouth, MN, USA","institution_ids":[]},{"raw_affiliation_string":"Honeywell Aerosp. - Plymouth, Plymouth, MN, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":2.9519,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.90976262,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"58","issue":"6","first_page":"1628","last_page":"1634"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9916999936103821,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9916999936103821,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.004699999932199717,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metal-semiconductor-field-effect-transistors","display_name":"MESFET","score":0.8679999709129333},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.9480000138282776},{"id":"https://openalex.org/keywords/cmos-technology","display_name":"CMOS technology","score":0.6399999856948853},{"id":"https://openalex.org/keywords/gate-length-scaling","display_name":"gate length scaling","score":0.7009999752044678},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.7820000052452087},{"id":"https://openalex.org/keywords/current-drive","display_name":"current drive","score":0.7519999742507935},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.7440000176429749},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.7369999885559082},{"id":"https://openalex.org/keywords/high-frequency-transistors","display_name":"high-frequency transistors","score":0.6240000128746033}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.8730896711349487},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7284650802612305},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4712679088115692},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44226738810539246},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4372323155403137},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4186145067214966},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3736242651939392},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34341681003570557},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1518097221851349},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.128475159406662}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/ted.2011.2125965","doi":"https://doi.org/10.1109/ted.2011.2125965","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2011.2125965","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},{"id":"mag:2188015528","doi":null,"is_oa":false,"landing_page_url":"http://ieeexplore.ieee.org/iel5/16/5770363/05765667.pdf","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W2000026572","https://openalex.org/W2000622736","https://openalex.org/W2007134156","https://openalex.org/W2038884427","https://openalex.org/W2048382859","https://openalex.org/W2094518331","https://openalex.org/W2118616252","https://openalex.org/W2137195916","https://openalex.org/W2144560537","https://openalex.org/W2148270423","https://openalex.org/W2150441742","https://openalex.org/W2158767207","https://openalex.org/W2160666916","https://openalex.org/W2168060495"],"related_works":["https://openalex.org/W2188015528","https://openalex.org/W2160666916","https://openalex.org/W2162106747","https://openalex.org/W2058172954","https://openalex.org/W3007640427","https://openalex.org/W2078583406","https://openalex.org/W2108890031","https://openalex.org/W2127008066","https://openalex.org/W2042719370","https://openalex.org/W2063859891"],"abstract_inverted_index":{"Metal-semiconductor":[0],"field-effect":[1],"transistors":[2],"(MESFETs)":[3],"have":[4,23,48],"been":[5,24],"fabricated":[6],"using":[7,36],"a":[8,28,37,49,57,73,80],"150-nm":[9],"partially":[10],"depleted":[11],"silicon-on-insulator":[12],"complementary":[13],"metal-oxide-semiconductor":[14],"(CMOS)":[15],"technology.":[16,40],"Minimum":[17],"gate":[18,106],"lengths":[19],"of":[20,76,114],"150":[21,46],"nm":[22,47,70],"achieved,":[25],"which":[26,85],"represents":[27],"significant":[29,96],"reduction":[30],"compared":[31],"with":[32,44,56,72,88],"an":[33,103],"earlier":[34,90],"demonstration":[35],"350-nm":[38],"CMOS":[39],"The":[41],"scaled":[42],"MESFETs":[43],"Lg=":[45,68],"current":[50,74],"drive":[51,75],"that":[52],"exceeds":[53],"200":[54],"mA/mm":[55,78],"peak":[58,81],"fT>;":[59],"35":[60],"GHz.":[61],"This":[62],"is":[63],"considerably":[64],"higher":[65],"than":[66],"the":[67,89,112],"400":[69,99],"MESFET":[71,105],"~70":[77],"and":[79],"fT=":[82],"10.6":[83],"GHz,":[84],"was":[86],"possible":[87],"generation.":[91],"However,":[92],"short-channel":[93],"effects":[94],"become":[95],"for":[97,108],"Lg<;":[98],"nm,":[100],"resulting":[101],"in":[102,111],"optimum":[104],"length":[107],"this":[109],"technology":[110],"range":[113],"200-300":[115],"nm.":[116]},"counts_by_year":[{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}