{"id":"https://openalex.org/W2022229367","doi":"https://doi.org/10.1016/0022-0248(90)90971-m","title":"Characterization of CdTe crystals by chemical etching and cathodoluminescence measurements","display_name":"Characterization of CdTe crystals by chemical etching and cathodoluminescence measurements","publication_year":1990,"publication_date":"1990-04-01","ids":{"openalex":"https://openalex.org/W2022229367","doi":"https://doi.org/10.1016/0022-0248(90)90971-m","mag":"2022229367"},"language":"en","primary_location":{"id":"doi:10.1016/0022-0248(90)90971-m","doi":"https://doi.org/10.1016/0022-0248(90)90971-m","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-0248(90)90971-m","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"G. Brandt","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Brandt","raw_affiliation_strings":["Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062429053","display_name":"Helmut Ennen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Ennen","raw_affiliation_strings":["Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":null,"display_name":"R. Moritz","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Moritz","raw_affiliation_strings":["Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003776794","display_name":"W. Rothemund","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. Rothemund","raw_affiliation_strings":["Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Eckerstrasse 4, D-7800 Freiburg, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I4210090068"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210090068"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":0.9567,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.73810112,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"101","issue":"1-4","first_page":"226","last_page":"231"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.004000000189989805,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10939","display_name":"Crystal Structures and Properties","score":0.003100000089034438,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cdte-crystals","display_name":"CdTe crystals","score":0.9229999780654907},{"id":"https://openalex.org/keywords/chemical-etching","display_name":"chemical etching","score":0.9409999847412109},{"id":"https://openalex.org/keywords/etch-pits","display_name":"etch pits","score":0.8619999885559082},{"id":"https://openalex.org/keywords/dislocations","display_name":"dislocations","score":0.7319999933242798},{"id":"https://openalex.org/keywords/precipitate","display_name":"precipitates","score":0.9259999990463257},{"id":"https://openalex.org/keywords/melt-growth","display_name":"melt growth","score":0.5730000138282776},{"id":"https://openalex.org/keywords/cathodoluminescence","display_name":"cathodoluminescence","score":0.9089999794960022}],"concepts":[{"id":"https://openalex.org/C139861200","wikidata":"https://www.wikidata.org/wiki/Q369794","display_name":"Cathodoluminescence","level":3,"score":0.97459477186203},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.8089553117752075},{"id":"https://openalex.org/C81626474","wikidata":"https://www.wikidata.org/wiki/Q2518122","display_name":"Etch pit density","level":4,"score":0.7553573846817017},{"id":"https://openalex.org/C6110044","wikidata":"https://www.wikidata.org/wiki/Q4118086","display_name":"Cadmium telluride photovoltaics","level":2,"score":0.7132520079612732},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.6830816268920898},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.6575448513031006},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.6148294806480408},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.549135148525238},{"id":"https://openalex.org/C26456737","wikidata":"https://www.wikidata.org/wiki/Q185154","display_name":"Crystal growth","level":2,"score":0.4929635524749756},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.43259888887405396},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.39172425866127014},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.36844921112060547},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.363007128238678},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.30881786346435547},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.21626731753349304},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.08674085140228271},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0022-0248(90)90971-m","doi":"https://doi.org/10.1016/0022-0248(90)90971-m","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-0248(90)90971-m","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W2008822364","https://openalex.org/W2030134574","https://openalex.org/W2031727186","https://openalex.org/W2032696709","https://openalex.org/W2045365722","https://openalex.org/W2053256917","https://openalex.org/W2069209576","https://openalex.org/W2071596779","https://openalex.org/W2078118237","https://openalex.org/W2092033367"],"related_works":["https://openalex.org/W2066726719","https://openalex.org/W1969798639","https://openalex.org/W1972726818","https://openalex.org/W2032169417","https://openalex.org/W3036885094","https://openalex.org/W2079662710","https://openalex.org/W1994426613","https://openalex.org/W2059733012","https://openalex.org/W2492765798","https://openalex.org/W62856772"],"abstract_inverted_index":null,"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}