{"id":"https://openalex.org/W2020385585","doi":"https://doi.org/10.1063/1.1499977","title":"Electrical and optical properties of GaN films implanted with Mn and Co","display_name":"Electrical and optical properties of GaN films implanted with Mn and Co","publication_year":2002,"publication_date":"2002-08-30","ids":{"openalex":"https://openalex.org/W2020385585","doi":"https://doi.org/10.1063/1.1499977","mag":"2020385585"},"language":"en","primary_location":{"id":"doi:10.1063/1.1499977","doi":"https://doi.org/10.1063/1.1499977","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1499977","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016479284","display_name":"Alexander Y. Polyakov","orcid":"https://orcid.org/0000-0001-6898-6126","observed_orcids":["https://orcid.org/0000-0001-6898-6126"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Y. Polyakov","raw_affiliation_strings":["Institute of Rare Metals, Moscow\u200910917, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow\u200910917, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016164016","display_name":"N. B. Smirnov","orcid":"https://orcid.org/0000-0002-4993-0175","observed_orcids":["https://orcid.org/0000-0002-4993-0175"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. B. Smirnov","raw_affiliation_strings":["Institute of Rare Metals, Moscow\u200910917, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow\u200910917, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015342153","display_name":"Anatoliy V. Govorkov","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. V. Govorkov","raw_affiliation_strings":["Institute of Rare Metals, Moscow\u200910917, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow\u200910917, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058091160","display_name":"N. Y. Pashkova","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"N. Y. Pashkova","raw_affiliation_strings":["Institute of Rare Metals, Moscow\u200910917, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Rare Metals, Moscow\u200910917, Russia","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029666837","display_name":"J. Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Kim","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. Ren","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109992366","display_name":"Mark E. Overberg","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. E. Overberg","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108494909","display_name":"Gerald T. Thaler","orcid":"https://orcid.org/0009-0008-2370-578X","observed_orcids":["https://orcid.org/0009-0008-2370-578X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. T. Thaler","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077738125","display_name":"C. R. Abernathy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. R. Abernathy","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. J. Pearton","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111939565","display_name":"R. G. Wilson","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. G. Wilson","raw_affiliation_strings":["Consultant, Stevenson Ranch, California\u200991381"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Consultant, Stevenson Ranch, California\u200991381","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":3.6038,"has_fulltext":false,"cited_by_count":46,"citation_normalized_percentile":{"value":0.93663594,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"92","issue":"6","first_page":"3130","last_page":"3136"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan","display_name":"GaN","score":0.6740000247955322},{"id":"https://openalex.org/keywords/cobalt-ion-implantation","display_name":"cobalt ion implantation","score":1.0},{"id":"https://openalex.org/keywords/deep-acceptors","display_name":"deep acceptors","score":0.8809999823570251},{"id":"https://openalex.org/keywords/deep-electron-traps","display_name":"deep electron traps","score":0.7979999780654907},{"id":"https://openalex.org/keywords/blue-emission","display_name":"blue emission","score":0.8809999823570251},{"id":"https://openalex.org/keywords/capacitance-voltage-characteristics","display_name":"capacitance-voltage characteristics","score":0.578000009059906},{"id":"https://openalex.org/keywords/deep-level-transient-spectroscopy","display_name":"deep level transient spectroscopy","score":0.8130000233650208},{"id":"https://openalex.org/keywords/optical-injection","display_name":"optical injection","score":0.6470000147819519},{"id":"https://openalex.org/keywords/electrical-injection","display_name":"electrical injection","score":0.640999972820282},{"id":"https://openalex.org/keywords/out-diffusion","display_name":"out-diffusion","score":0.6890000104904175},{"id":"https://openalex.org/keywords/radiation-damage-annealing","display_name":"radiation damage annealing","score":0.7879999876022339},{"id":"https://openalex.org/keywords/point-defects","display_name":"point defects","score":0.6050000190734863},{"id":"https://openalex.org/keywords/temperature-dependent-resistivity","display_name":"temperature dependence of resistivity","score":0.6190000176429749}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6417549848556519},{"id":"https://openalex.org/C2779892579","wikidata":"https://www.wikidata.org/wiki/Q912138","display_name":"Acceptor","level":2,"score":0.6265808343887329},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6207048892974854},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5298775434494019},{"id":"https://openalex.org/C4839761","wikidata":"https://www.wikidata.org/wiki/Q212111","display_name":"Spectral line","level":2,"score":0.48845043778419495},{"id":"https://openalex.org/C2780080961","wikidata":"https://www.wikidata.org/wiki/Q176282","display_name":"Deep-level transient spectroscopy","level":3,"score":0.4574742317199707},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4523140788078308},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.44592607021331787},{"id":"https://openalex.org/C164675345","wikidata":"https://www.wikidata.org/wiki/Q898226","display_name":"Crystallographic defect","level":2,"score":0.4350038468837738},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.42665353417396545},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29623717069625854},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2959326505661011},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.28937214612960815},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.14584806561470032},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.12803679704666138},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.08582597970962524},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06626436114311218},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C1276947","wikidata":"https://www.wikidata.org/wiki/Q333","display_name":"Astronomy","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1499977","doi":"https://doi.org/10.1063/1.1499977","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1499977","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321079","display_name":"Russian Foundation for Basic Research","ror":"https://ror.org/02mh1ke95"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1967312400","https://openalex.org/W1969200114","https://openalex.org/W1972463184","https://openalex.org/W1982074734","https://openalex.org/W1985590542","https://openalex.org/W1988325907","https://openalex.org/W1993633324","https://openalex.org/W1996785357","https://openalex.org/W1997064867","https://openalex.org/W2024244086","https://openalex.org/W2028173815","https://openalex.org/W2037538637","https://openalex.org/W2038173448","https://openalex.org/W2054199752","https://openalex.org/W2058451998","https://openalex.org/W2062269154","https://openalex.org/W2070414203","https://openalex.org/W2070933335","https://openalex.org/W2089396004","https://openalex.org/W2090081496","https://openalex.org/W2091768670","https://openalex.org/W4211259817","https://openalex.org/W4323055322"],"related_works":["https://openalex.org/W1966011557","https://openalex.org/W2043056115","https://openalex.org/W2601027842","https://openalex.org/W1976410535","https://openalex.org/W2326359766","https://openalex.org/W2032592410","https://openalex.org/W3111062627","https://openalex.org/W2033471506","https://openalex.org/W2041971578","https://openalex.org/W2158236407"],"abstract_inverted_index":{"Optical":[0],"transmission":[1,44],"spectra,":[2,4],"microcathodoluminescence":[3],"capacitance\u2013voltage":[5],"and":[6,13,20,35,38,69,76,157,160,168],"capacitance\u2013frequency":[7],"curves,":[8],"temperature":[9],"dependence":[10],"of":[11,32,124,151],"resistivity":[12],"deep":[14,52,80,117],"level":[15,85],"spectra":[16],"with":[17,29,73,83,101],"both":[18],"electrical":[19],"optical":[21,43],"injection":[22],"were":[23],"measured":[24],"on":[25],"n-GaN":[26],"samples":[27],"implanted":[28,109,129],"high":[30,149],"doses":[31],"Mn":[33,49,68],"(3\u00d71016":[34],"4\u00d71016":[36],"cm\u22122)":[37],"Co":[39,59,70],"(4\u00d71016":[40],"cm\u22122).":[41],"From":[42],"it":[45],"was":[46],"found":[47],"that":[48],"forms":[50],"a":[51,84,96,111,148],"acceptor":[53,60],"near":[54,86,103],"Ev+1.8":[55],"eV":[56,64,156,159,167],"while":[57],"the":[58,108,128,132,140],"is":[61,118,145],"about":[62,114],"0.1":[63],"deeper.":[65],"In":[66],"addition,":[67],"form":[71],"complexes":[72,78,90],"native":[74],"defects":[75,126],"these":[77],"are":[79,91],"electron":[81,152],"traps":[82,153,162],"Ec\u22120.5":[87],"eV.":[88,105,170],"Such":[89],"most":[92,120],"likely":[93,121],"responsible":[94],"for":[95],"strong":[97],"blue":[98],"luminescence":[99],"band":[100],"energy":[102],"2.9":[104],"Adjacent":[106],"to":[107,137],"region":[110,113,144],"defect":[112],"1":[115],"\u03bcm":[116],"formed,":[119],"by":[122,147],"out-diffusion":[123],"point":[125],"from":[127],"zone":[130],"during":[131],"700":[133],"\u00b0C":[134],"annealing":[135],"used":[136],"partially":[138],"remove":[139],"radiation":[141],"damage.":[142],"This":[143],"characterized":[146],"density":[150],"at":[154,163],"Ec\u22120.25":[155],"Ec\u22120.7":[158],"hole":[161],"Ev+0.2":[164],"eV,":[165],"Ev+0.35":[166],"Ev+0.45":[169]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}