{"id":"https://openalex.org/W2020282610","doi":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","title":"2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility","display_name":"2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility","publication_year":2010,"publication_date":"2010-04-29","ids":{"openalex":"https://openalex.org/W2020282610","doi":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","mag":"2020282610"},"language":"en","primary_location":{"id":"doi:10.4028/www.scientific.net/msf.645-648.1207","doi":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","is_oa":true,"landing_page_url":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science Forum","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066438326","display_name":"Amador P\u00e9rez\u2010Tom\u00e1s","orcid":"https://orcid.org/0000-0002-0551-3142","observed_orcids":["https://orcid.org/0000-0002-0551-3142"]},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Amador P\u00e9rez-Tom\u00e1s","raw_affiliation_strings":["Campus Universidad Auton\u00f3ma de Barcelona"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Campus Universidad Auton\u00f3ma de Barcelona","institution_ids":["https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070144824","display_name":"Marcel Placidi","orcid":"https://orcid.org/0000-0001-5684-9669","observed_orcids":["https://orcid.org/0000-0001-5684-9669"]},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Marcel Placidi","raw_affiliation_strings":["Campus Universidad Auton\u00f3ma de Barcelona"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Campus Universidad Auton\u00f3ma de Barcelona","institution_ids":["https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109813554","display_name":"N. Baron","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210124361","display_name":"Centre de Recherche sur l'H\u00e9t\u00e9ro-Epitaxie et ses Applications","ror":"https://ror.org/03y8mpv07","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210098836","https://openalex.org/I4210124361"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"N. Baron","raw_affiliation_strings":["Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210124361"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022874034","display_name":"S\u00e9bastien Chenot","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210124361","display_name":"Centre de Recherche sur l'H\u00e9t\u00e9ro-Epitaxie et ses Applications","ror":"https://ror.org/03y8mpv07","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210098836","https://openalex.org/I4210124361"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S\u00e9bastien Chenot","raw_affiliation_strings":["Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210124361"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011220704","display_name":"Yvon Cordier","orcid":"https://orcid.org/0000-0003-3720-9409","observed_orcids":["https://orcid.org/0000-0003-3720-9409"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210124361","display_name":"Centre de Recherche sur l'H\u00e9t\u00e9ro-Epitaxie et ses Applications","ror":"https://ror.org/03y8mpv07","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210098836","https://openalex.org/I4210124361"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Yvon Cordier","raw_affiliation_strings":["Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210124361"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110090245","display_name":"J. C. Moreno","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210124361","display_name":"Centre de Recherche sur l'H\u00e9t\u00e9ro-Epitaxie et ses Applications","ror":"https://ror.org/03y8mpv07","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210098836","https://openalex.org/I4210124361"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.C. Moreno","raw_affiliation_strings":["Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications CNRS","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210124361"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Jos\u00e9 Millan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Jos\u00e9 Millan","raw_affiliation_strings":["IMB-CNM, CSIC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, CSIC","institution_ids":["https://openalex.org/I134820265","https://openalex.org/I4210160312"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012359906","display_name":"Philippe Godignon","orcid":"https://orcid.org/0000-0002-9273-9819","observed_orcids":["https://orcid.org/0000-0002-9273-9819"]},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"government","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Philippe Godignon","raw_affiliation_strings":["IMB-CNM, CSIC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMB-CNM, CSIC","institution_ids":["https://openalex.org/I134820265","https://openalex.org/I4210160312"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.23676825,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"645-648","issue":null,"first_page":"1207","last_page":"1210"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9297000169754028,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9297000169754028,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.065700002014637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.003599999938160181,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/channel-mobility","display_name":"channel mobility","score":0.6349999904632568},{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.800000011920929},{"id":"https://openalex.org/keywords/algan-gan-high-electron-mobility-transistors","display_name":"AlGaN/GaN HEMT","score":0.9490000009536743},{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.8930000066757202},{"id":"https://openalex.org/keywords/gan-mosfet","display_name":"GaN MOSFET","score":0.996999979019165},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.8980000019073486},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"electron mobility","score":0.7730000019073486},{"id":"https://openalex.org/keywords/mobility-modeling","display_name":"mobility modeling","score":0.6700000166893005},{"id":"https://openalex.org/keywords/physical-device-modeling","display_name":"physical device modeling","score":0.32600000500679016}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.9411373734474182},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7828435897827148},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7220304012298584},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.6397740840911865},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.610397219657898},{"id":"https://openalex.org/C132882038","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"Induced high electron mobility transistor","level":5,"score":0.6048917770385742},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5740487575531006},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5488971471786499},{"id":"https://openalex.org/C191485582","wikidata":"https://www.wikidata.org/wiki/Q6887309","display_name":"Mobility model","level":2,"score":0.45848530530929565},{"id":"https://openalex.org/C1893757","wikidata":"https://www.wikidata.org/wiki/Q3653001","display_name":"Inversion (geology)","level":3,"score":0.4582899808883667},{"id":"https://openalex.org/C11918236","wikidata":"https://www.wikidata.org/wiki/Q7501554","display_name":"Short-channel effect","level":5,"score":0.4549039304256439},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30519556999206543},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.12875935435295105},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10150215029716492},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.06082630157470703},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.04681515693664551},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C109007969","wikidata":"https://www.wikidata.org/wiki/Q749565","display_name":"Structural basin","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.4028/www.scientific.net/msf.645-648.1207","doi":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","is_oa":true,"landing_page_url":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science Forum","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.4028/www.scientific.net/msf.645-648.1207","doi":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","is_oa":true,"landing_page_url":"https://doi.org/10.4028/www.scientific.net/msf.645-648.1207","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science Forum","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1965538652","https://openalex.org/W1968439198","https://openalex.org/W2012729480","https://openalex.org/W2074419573","https://openalex.org/W6600473871"],"related_works":["https://openalex.org/W2616715816","https://openalex.org/W2737262326","https://openalex.org/W2034206117","https://openalex.org/W1994881106","https://openalex.org/W4414070717","https://openalex.org/W1988695052","https://openalex.org/W2483822483","https://openalex.org/W4388282143","https://openalex.org/W2077397968","https://openalex.org/W6908415337"],"abstract_inverted_index":{"Channel":[0],"mobility":[1,43],"properties":[2],"of":[3,25],"SiC":[4],"and":[5,9],"GaN":[6],"based":[7],"MOSFETs":[8],"AlGaN/GaN":[10],"HEMTs":[11],"are":[12,50],"compared":[13],"in":[14,44],"this":[15,54],"paper.":[16],"For":[17],"a":[18],"similar":[19],"active":[20],"area,":[21],"the":[22,26,32,35,41],"specific":[23],"on-resistance":[24,33],"MOSFET":[27],"is":[28,38],"much":[29],"larger":[30],"than":[31],"for":[34],"HEMT,":[36],"which":[37],"depending":[39],"on":[40],"electron":[42],"their":[45],"respective":[46],"channels.":[47],"Physically-based":[48],"models":[49],"used":[51],"to":[52],"fit":[53],"experimental":[55],"transistor":[56],"mobility.":[57]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}