{"id":"https://openalex.org/W2020003503","doi":"https://doi.org/10.1109/isscc.2014.6757460","title":"19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology","display_name":"19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology","publication_year":2014,"publication_date":"2014-02-01","ids":{"openalex":"https://openalex.org/W2020003503","doi":"https://doi.org/10.1109/isscc.2014.6757460","mag":"2020003503"},"language":"en","primary_location":{"id":"doi:10.1109/isscc.2014.6757460","doi":"https://doi.org/10.1109/isscc.2014.6757460","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2014.6757460","pdf_url":null,"source":{"id":"https://openalex.org/S4210210374","display_name":"Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference","issn_l":"0193-6530","issn":["0193-6530","2376-8606"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)","raw_type":"proceedings-article"},"parent_works":[],"lineage":["https://openalex.org/W2020003503"],"child_works_count":0,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109162306","display_name":"R. Fackenthal","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Richard Fackenthal","raw_affiliation_strings":["Micron, Folsom, CA","Micron, Folsom, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron, Folsom, CA","institution_ids":[]},{"raw_affiliation_string":"Micron, Folsom, CA, USA","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Makoto Kitagawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Makoto Kitagawa","raw_affiliation_strings":["Sony, Boise, ID","Sony, Boise, ID, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony, Boise, ID","institution_ids":[]},{"raw_affiliation_string":"Sony, Boise, ID, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049531813","display_name":"Wataru Otsuka","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wataru Otsuka","raw_affiliation_strings":["Sony, Boise, ID","Sony, Boise, ID, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony, Boise, ID","institution_ids":[]},{"raw_affiliation_string":"Sony, Boise, ID, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085941662","display_name":"Kirk Prall","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kirk Prall","raw_affiliation_strings":["Micron, Boise, ID","[Micron, Boise, ID, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron, Boise, ID","institution_ids":["https://openalex.org/I11912373"]},{"raw_affiliation_string":"[Micron, Boise, ID, USA]","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084130482","display_name":"Duane Mills","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Duane Mills","raw_affiliation_strings":["Micron, Folsom, CA","Micron, Folsom, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron, Folsom, CA","institution_ids":[]},{"raw_affiliation_string":"Micron, Folsom, CA, USA","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035347583","display_name":"Keiichi Tsutsui","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Keiichi Tsutsui","raw_affiliation_strings":["Sony, Japan","Sony, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony, Japan","institution_ids":["https://openalex.org/I4210143797"]},{"raw_affiliation_string":"Sony, Tokyo, Japan","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111448114","display_name":"J. Javanifard","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jahanshir Javanifard","raw_affiliation_strings":["Micron, Folsom, CA","Micron, Folsom, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron, Folsom, CA","institution_ids":[]},{"raw_affiliation_string":"Micron, Folsom, CA, USA","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030647929","display_name":"K. Tedrow","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kerry Tedrow","raw_affiliation_strings":["Micron, Folsom, CA","Micron, Folsom, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron, Folsom, CA","institution_ids":[]},{"raw_affiliation_string":"Micron, Folsom, CA, USA","institution_ids":["https://openalex.org/I11912373"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042885196","display_name":"Tomohito Tsushima","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tomohito Tsushima","raw_affiliation_strings":["Sony, Boise, ID","Sony, Boise, ID, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony, Boise, ID","institution_ids":[]},{"raw_affiliation_string":"Sony, Boise, ID, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017034155","display_name":"Y. Shibahara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshiyuki Shibahara","raw_affiliation_strings":["Sony, Japan","Sony, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony, Japan","institution_ids":["https://openalex.org/I4210143797"]},{"raw_affiliation_string":"Sony, Tokyo, Japan","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007548367","display_name":"Glen Hush","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I11912373","display_name":"Micron (United States)","ror":"https://ror.org/02fv52296","country_code":"US","type":"company","lineage":["https://openalex.org/I11912373"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Glen Hush","raw_affiliation_strings":["Micron, Boise, ID","[Micron, Boise, ID, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Micron, Boise, ID","institution_ids":["https://openalex.org/I11912373"]},{"raw_affiliation_string":"[Micron, Boise, ID, USA]","institution_ids":["https://openalex.org/I11912373"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":37.7362,"has_fulltext":false,"cited_by_count":227,"citation_normalized_percentile":{"value":0.9995546,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":100},"biblio":{"volume":null,"issue":null,"first_page":"338","last_page":"339"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"resistive random access memory","score":0.9890000224113464},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.7730000019073486}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7795194387435913},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.7074258327484131},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7042695879936218},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6932851672172546},{"id":"https://openalex.org/C2779795794","wikidata":"https://www.wikidata.org/wiki/Q7315343","display_name":"Reset (finance)","level":2,"score":0.44899505376815796},{"id":"https://openalex.org/C118524514","wikidata":"https://www.wikidata.org/wiki/Q173212","display_name":"Computer architecture","level":1,"score":0.44275203347206116},{"id":"https://openalex.org/C202491316","wikidata":"https://www.wikidata.org/wiki/Q272683","display_name":"Instruction set","level":2,"score":0.4311988949775696},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.39179426431655884},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3438360095024109},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19319123029708862},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.1292986273765564},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11276307702064514},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C106159729","wikidata":"https://www.wikidata.org/wiki/Q2294553","display_name":"Financial economics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/isscc.2014.6757460","doi":"https://doi.org/10.1109/isscc.2014.6757460","is_oa":false,"landing_page_url":"https://doi.org/10.1109/isscc.2014.6757460","pdf_url":null,"source":{"id":"https://openalex.org/S4210210374","display_name":"Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference","issn_l":"0193-6530","issn":["0193-6530","2376-8606"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1981321271","https://openalex.org/W1983626370","https://openalex.org/W2112746106","https://openalex.org/W2124673785","https://openalex.org/W2178102281","https://openalex.org/W3140396777","https://openalex.org/W3142098508","https://openalex.org/W6677158833","https://openalex.org/W6678448230","https://openalex.org/W6685295466"],"related_works":["https://openalex.org/W2470758648","https://openalex.org/W4240046958","https://openalex.org/W2124673785","https://openalex.org/W3140396777","https://openalex.org/W2003284017","https://openalex.org/W2776589185","https://openalex.org/W2043393912","https://openalex.org/W2921351161","https://openalex.org/W1966939297","https://openalex.org/W2051737777"],"abstract_inverted_index":{"Resistive":[0],"RAMs":[1],"(ReRAMs)":[2],"have":[3,31],"emerged":[4],"as":[5,81],"leading":[6],"candidates":[7],"to":[8,14,86],"displace":[9],"conventional":[10],"Flash":[11],"memories":[12],"due":[13],"their":[15],"high":[16,23,29],"density,":[17],"good":[18],"scalability,":[19],"low":[20,35,43],"power":[21],"and":[22,45,65,78,90],"performance.":[24],"Previous":[25],"ReRAM":[26,54],"designs":[27],"demonstrating":[28],"performance":[30,47],"done":[32],"so":[33],"on":[34],"density":[36],"arrays":[37],"(8Gb)":[38],"were":[39],"accompanied":[40],"by":[41],"relatively":[42],"read":[44,92],"write":[46,89],"[1-5].":[48],"This":[49],"work":[50],"describes":[51],"a":[52,57,61,74,95],"16Gb":[53],"designed":[55],"in":[56,94],"27nm":[58],"node,":[59],"with":[60],"1GB/s":[62,91],"DDR":[63],"interface":[64],"an":[66],"8-bank":[67],"concurrent":[68,82],"DRAM-like":[69],"core":[70],"architecture.":[71],"High":[72],"parallelism,":[73],"pipelined":[75],"data-path":[76],"architecture":[77],"innovations":[79],"such":[80],"set/reset":[83],"verify":[84],"combine":[85],"achieve":[87],"200MB/s":[88],"throughputs":[93],"high-density":[96],"device.":[97]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":16},{"year":2021,"cited_by_count":23},{"year":2020,"cited_by_count":19},{"year":2019,"cited_by_count":22},{"year":2018,"cited_by_count":30},{"year":2017,"cited_by_count":36},{"year":2016,"cited_by_count":24},{"year":2015,"cited_by_count":24},{"year":2014,"cited_by_count":10},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}