{"id":"https://openalex.org/W2019795397","doi":"https://doi.org/10.1149/1.2085727","title":"Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer","display_name":"Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer","publication_year":1991,"publication_date":"1991-04-01","ids":{"openalex":"https://openalex.org/W2019795397","doi":"https://doi.org/10.1149/1.2085727","mag":"2019795397"},"language":"en","primary_location":{"id":"doi:10.1149/1.2085727","doi":"https://doi.org/10.1149/1.2085727","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.2085727","pdf_url":"https://iopscience.iop.org/article/10.1149/1.2085727/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/1.2085727/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041983684","display_name":"W. van der Wel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. van der Wel","raw_affiliation_strings":["Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany","institution_ids":["https://openalex.org/I4923324"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025481029","display_name":"R. Buchner","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Buchner","raw_affiliation_strings":["Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany","institution_ids":["https://openalex.org/I4923324"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056758423","display_name":"K. Haberger","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"K. Haberger","raw_affiliation_strings":["Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany","institution_ids":["https://openalex.org/I4923324"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066796996","display_name":"Stefan Seitz","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"S. Seitz","raw_affiliation_strings":["Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany","institution_ids":["https://openalex.org/I4923324"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102757480","display_name":"J. Weber","orcid":"https://orcid.org/0000-0001-9481-976X","observed_orcids":["https://orcid.org/0000-0001-9481-976X"]},"institutions":[{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Weber","raw_affiliation_strings":["Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany","institution_ids":["https://openalex.org/I4923324"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027444955","display_name":"Peter Seegebrecht","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4923324","display_name":"Fraunhofer-Gesellschaft","ror":"https://ror.org/05hkkdn48","country_code":"DE","type":"government","lineage":["https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"P. Seegebrecht","raw_affiliation_strings":["Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer\u2010Institute for Solid State Technology, D\u20108000 M\u00fcnchen 60, Germany","institution_ids":["https://openalex.org/I4923324"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4923324"],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":0.4481,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.62620085,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"138","issue":"4","first_page":"1117","last_page":"1122"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8633000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8633000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.09139999747276306,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.008299999870359898,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/substrate-damage","display_name":"substrate damage","score":0.8330000042915344},{"id":"https://openalex.org/keywords/laser-recrystallization","display_name":"laser recrystallization","score":0.9940000176429749},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.9449999928474426},{"id":"https://openalex.org/keywords/polysilicon-layer","display_name":"polysilicon layer","score":0.7979999780654907},{"id":"https://openalex.org/keywords/argon-laser","display_name":"argon laser","score":0.9520000219345093},{"id":"https://openalex.org/keywords/damage-detection","display_name":"damage detection","score":0.6520000100135803},{"id":"https://openalex.org/keywords/damage-prevention","display_name":"damage prevention","score":0.7630000114440918},{"id":"https://openalex.org/keywords/nmos-devices","display_name":"NMOS devices","score":0.9259999990463257},{"id":"https://openalex.org/keywords/device-characteristics","display_name":"device characteristics","score":0.375}],"concepts":[{"id":"https://openalex.org/C195702682","wikidata":"https://www.wikidata.org/wiki/Q623318","display_name":"Recrystallization (geology)","level":2,"score":0.8633894920349121},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7533437013626099},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7497092485427856},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7124062776565552},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5909193754196167},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5590810775756836},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5083886981010437},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4857049882411957},{"id":"https://openalex.org/C547737533","wikidata":"https://www.wikidata.org/wiki/Q696","display_name":"Argon","level":2,"score":0.41595539450645447},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.34489837288856506},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2882295250892639},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20866021513938904},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.13492467999458313},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12495049834251404},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0762011706829071},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.043989211320877075},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1149/1.2085727","doi":"https://doi.org/10.1149/1.2085727","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.2085727","pdf_url":"https://iopscience.iop.org/article/10.1149/1.2085727/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},{"id":"pmh:oai:publica.fraunhofer.de:publica/179683","doi":null,"is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/179683","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"journal article"}],"best_oa_location":{"id":"doi:10.1149/1.2085727","doi":"https://doi.org/10.1149/1.2085727","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.2085727","pdf_url":"https://iopscience.iop.org/article/10.1149/1.2085727/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2019795397.pdf","grobid_xml":"https://content.openalex.org/works/W2019795397.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W6989399862","https://openalex.org/W2054964133","https://openalex.org/W7071650416","https://openalex.org/W2168295758","https://openalex.org/W1987332010","https://openalex.org/W4416675063","https://openalex.org/W7066977728","https://openalex.org/W2329811778","https://openalex.org/W3081902966","https://openalex.org/W2313459198"],"abstract_inverted_index":{"The":[0,22],"substrate":[1,16,41],"damage":[2,42],"(SD)":[3],"induced":[4],"by":[5,17,27,51],"laser":[6,57],"recrystallization":[7,58],"of":[8,34,59],"a":[9,14,18,60],"polysilicon":[10],"layer":[11,19,62],"insulated":[12],"from":[13],"Si":[15],"is":[20,49],"discussed.":[21,46],"SD":[23],"can":[24],"be":[25],"detected":[26],"simple":[28],"methods":[29],"which":[30],"offer":[31],"the":[32,52],"advantage":[33],"rapidly":[35],"available":[36],"results.":[37],"Measures":[38],"to":[39],"prevent":[40],"are":[43],"presented":[44],"and":[45],"Their":[47],"effectiveness":[48],"proved":[50],"fact":[53],"that":[54],"after":[55],"argon":[56],"SOI":[61],"substrate,":[63],"NMOS":[64],"devices":[65],"showed":[66],"no":[67],"change":[68],"in":[69],"their":[70],"characteristics.":[71]},"counts_by_year":[],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}