{"id":"https://openalex.org/W2018607107","doi":"https://doi.org/10.1117/12.926955","title":"Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics","display_name":"Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics","publication_year":2012,"publication_date":"2012-10-15","ids":{"openalex":"https://openalex.org/W2018607107","doi":"https://doi.org/10.1117/12.926955","mag":"2018607107"},"language":"en","primary_location":{"id":"doi:10.1117/12.926955","doi":"https://doi.org/10.1117/12.926955","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.926955","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108420126","display_name":"S. P. Pati","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210098947","display_name":"National Institute of Science and Technology","ror":"https://ror.org/01150px97","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210098947"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S. P. Pati","raw_affiliation_strings":["National Institute of Science and Technology (India)","National Institute of Science and Technology, India#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Science and Technology (India)","institution_ids":["https://openalex.org/I4210098947"]},{"raw_affiliation_string":"National Institute of Science and Technology, India#TAB#","institution_ids":["https://openalex.org/I4210098947"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047906653","display_name":"P. R. Tripathy","orcid":"https://orcid.org/0000-0003-2416-2875","observed_orcids":["https://orcid.org/0000-0003-2416-2875"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. R. Tripathy","raw_affiliation_strings":["Purushottam Institute of Engineering and Technology, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Purushottam Institute of Engineering and Technology, India","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"S. K. Choudhury","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405278824","display_name":"Sundargarh Engineering College","ror":"https://ror.org/00kzfe760","country_code":"IN","type":"education","lineage":["https://openalex.org/I4405278824"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S. K. Choudhury","raw_affiliation_strings":["Sundargarh Engineering College (India)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sundargarh Engineering College (India)","institution_ids":["https://openalex.org/I4405278824"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110610846","display_name":"M. Mukharjee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I106542073","display_name":"University of Calcutta","ror":"https://ror.org/01e7v7w47","country_code":"IN","type":"education","lineage":["https://openalex.org/I106542073"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"M. Mukharjee","raw_affiliation_strings":["Univ. of Calcutta (India)","University of Calcutta, , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ. of Calcutta (India)","institution_ids":["https://openalex.org/I106542073"]},{"raw_affiliation_string":"University of Calcutta, , India","institution_ids":["https://openalex.org/I106542073"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010176180","display_name":"Pranati Purohit","orcid":"https://orcid.org/0000-0003-2174-2401","observed_orcids":["https://orcid.org/0000-0003-2174-2401"]},"institutions":[{"id":"https://openalex.org/I191366470","display_name":"ITM University","ror":"https://ror.org/004pc5924","country_code":"IN","type":"education","lineage":["https://openalex.org/I191366470"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"P. Purohit","raw_affiliation_strings":["ITM Univ. (India)","ITM University, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ITM Univ. (India)","institution_ids":["https://openalex.org/I191366470"]},{"raw_affiliation_string":"ITM University, India","institution_ids":["https://openalex.org/I191366470"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"8549","issue":null,"first_page":"85490P","last_page":"85490P"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9434000253677368,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9434000253677368,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.011300000362098217,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.002899999963119626,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/impatt-diodes","display_name":"IMPATT diodes","score":0.7889999747276306},{"id":"https://openalex.org/keywords/impact-ionization","display_name":"impact ionization","score":0.5920000076293945},{"id":"https://openalex.org/keywords/millimeter-wave-generation","display_name":"millimeter-wave generation","score":0.6880000233650208},{"id":"https://openalex.org/keywords/negative-resistance","display_name":"negative resistance","score":0.7329999804496765},{"id":"https://openalex.org/keywords/diode-efficiency","display_name":"diode efficiency","score":0.8560000061988831},{"id":"https://openalex.org/keywords/space-charge-region","display_name":"depletion region","score":0.5379999876022339},{"id":"https://openalex.org/keywords/high-power-rf-sources","display_name":"high-power RF sources","score":0.48399999737739563}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7217914462089539},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6580066680908203},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5784414410591125},{"id":"https://openalex.org/C31831630","wikidata":"https://www.wikidata.org/wiki/Q1411932","display_name":"IMPATT diode","level":3,"score":0.5500950217247009},{"id":"https://openalex.org/C62628764","wikidata":"https://www.wikidata.org/wiki/Q176300","display_name":"p\u2013n junction","level":3,"score":0.5424019694328308},{"id":"https://openalex.org/C33652038","wikidata":"https://www.wikidata.org/wiki/Q175906","display_name":"Avalanche breakdown","level":4,"score":0.5355313420295715},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.5290840268135071},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.4792928099632263},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.4615474045276642},{"id":"https://openalex.org/C3018129524","wikidata":"https://www.wikidata.org/wiki/Q7834377","display_name":"Transit time","level":2,"score":0.44129112362861633},{"id":"https://openalex.org/C193361668","wikidata":"https://www.wikidata.org/wiki/Q7523761","display_name":"Single-photon avalanche diode","level":4,"score":0.4359922707080841},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4263027012348175},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2845832109451294},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.2443889081478119},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.19602692127227783},{"id":"https://openalex.org/C109679912","wikidata":"https://www.wikidata.org/wiki/Q175932","display_name":"Avalanche photodiode","level":3,"score":0.19324073195457458},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19165870547294617},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14853382110595703},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.10238111019134521},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.09542757272720337},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.07485181093215942},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C22212356","wikidata":"https://www.wikidata.org/wiki/Q775325","display_name":"Transport engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.926955","doi":"https://doi.org/10.1117/12.926955","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.926955","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2003848337","https://openalex.org/W2313537013","https://openalex.org/W2076066568","https://openalex.org/W6940767698","https://openalex.org/W2137563557","https://openalex.org/W2068527375","https://openalex.org/W2345677341","https://openalex.org/W2156172622","https://openalex.org/W2946093896","https://openalex.org/W2028563492"],"abstract_inverted_index":{"A":[0],"recent":[1],"report":[2],"on":[3],"realization/studies":[4],"of":[5,17,32,47,60],"Si-SiC":[6],"hetero":[7,34],"junction":[8,35],"has":[9],"given":[10],"impetus":[11],"to":[12,56],"explore":[13],"them":[14],"for":[15,72],"generation":[16],"rf":[18,83,94],"power":[19,95],"in":[20,64],"double":[21],"drift":[22],"impact":[23],"ionization":[24,48],"avalanche":[25,54],"transit":[26],"time":[27],"(IMPATT)":[28],"mode.":[29],"MM-wave":[30],"properties":[31],"this":[33],"are":[36],"compared":[37],"with":[38],"corresponding":[39],"Si":[40,76],"and":[41,77,79],"SiC":[42],"homo":[43,74],".junction.":[44],"Interesting":[45],"feature":[46],"free":[49],"n-SiC":[50],"zone":[51,55,62],"localizes":[52],"the":[53],"less":[57],"than":[58],"10%":[59],"depletion":[61],"resulting":[63],"diode":[65],"efficiency":[66],"around":[67],"27%":[68],"(against":[69],"only":[70],"10-15%":[71],"both":[73],"junctions":[75],"SiC)":[78],"three":[80],"fold":[81],"high":[82,93],"negative":[84],"resistance,":[85],"which":[86],"can":[87],"be":[88],"therefore":[89],"termed":[90],"as":[91],"promising":[92],"source.":[96]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}