{"id":"https://openalex.org/W2018447364","doi":"https://doi.org/10.1109/22.32221","title":"RF measurements and characterization of heterostructure field-effect transistors at low temperatures","display_name":"RF measurements and characterization of heterostructure field-effect transistors at low temperatures","publication_year":1989,"publication_date":"1989-01-01","ids":{"openalex":"https://openalex.org/W2018447364","doi":"https://doi.org/10.1109/22.32221","mag":"2018447364"},"language":"en","primary_location":{"id":"doi:10.1109/22.32221","doi":"https://doi.org/10.1109/22.32221","is_oa":false,"landing_page_url":"https://doi.org/10.1109/22.32221","pdf_url":null,"source":{"id":"https://openalex.org/S198879913","display_name":"IEEE Transactions on Microwave Theory and Techniques","issn_l":"0018-9480","issn":["0018-9480","1557-9670"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320754","host_organization_name":"IEEE Microwave Theory and Techniques Society","host_organization_lineage":["https://openalex.org/P4310320754"],"host_organization_lineage_names":["IEEE Microwave Theory and Techniques Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Microwave Theory and Techniques","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069855419","display_name":"Wolfgang Brockerhoff","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I62318514","display_name":"University of Duisburg-Essen","ror":"https://ror.org/04mz5ra38","country_code":"DE","type":"education","lineage":["https://openalex.org/I62318514"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. Brockerhoff","raw_affiliation_strings":["Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany","institution_ids":["https://openalex.org/I62318514"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065431806","display_name":"H. Meschede","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I62318514","display_name":"University of Duisburg-Essen","ror":"https://ror.org/04mz5ra38","country_code":"DE","type":"education","lineage":["https://openalex.org/I62318514"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Meschede","raw_affiliation_strings":["Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany","institution_ids":["https://openalex.org/I62318514"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069862213","display_name":"Werner Prost","orcid":"https://orcid.org/0000-0003-0249-5927","observed_orcids":["https://orcid.org/0000-0003-0249-5927"]},"institutions":[{"id":"https://openalex.org/I62318514","display_name":"University of Duisburg-Essen","ror":"https://ror.org/04mz5ra38","country_code":"DE","type":"education","lineage":["https://openalex.org/I62318514"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. Prost","raw_affiliation_strings":["Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany","institution_ids":["https://openalex.org/I62318514"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113483779","display_name":"K. Heime","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I62318514","display_name":"University of Duisburg-Essen","ror":"https://ror.org/04mz5ra38","country_code":"DE","type":"education","lineage":["https://openalex.org/I62318514"]},{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"K. Heime","raw_affiliation_strings":["Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany","Institute of Semiconductor Technology, RWTH Aachen University, Aachen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fachgebiet Halbleitertechnik/Halbleitertechnologie, Universitat Duisburg-Essen, Duisburg, Germany","institution_ids":["https://openalex.org/I62318514"]},{"raw_affiliation_string":"Institute of Semiconductor Technology, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006204718","display_name":"G. Weimann","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2802562207","display_name":"Deutsche Bundespost","ror":"https://ror.org/0150tj573","country_code":"DE","type":"government","lineage":["https://openalex.org/I2802562207"]},{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Weimann","raw_affiliation_strings":["Forschungsinstitut der Deutschen Bundespost, Darmstadt, Germany","Walter Schottky Institut, Technische Universitat Munchen, Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Forschungsinstitut der Deutschen Bundespost, Darmstadt, Germany","institution_ids":["https://openalex.org/I2802562207"]},{"raw_affiliation_string":"Walter Schottky Institut, Technische Universitat Munchen, Garching, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050075756","display_name":"W. Schlapp","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2802562207","display_name":"Deutsche Bundespost","ror":"https://ror.org/0150tj573","country_code":"DE","type":"government","lineage":["https://openalex.org/I2802562207"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. Schlapp","raw_affiliation_strings":["Forschungsinstitut der Deutschen Bundespost, Darmstadt, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Forschungsinstitut der Deutschen Bundespost, Darmstadt, Germany","institution_ids":["https://openalex.org/I2802562207"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":2.8346,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.8939236,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"37","issue":"9","first_page":"1380","last_page":"1388"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.48190000653266907,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.48190000653266907,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.3752000033855438,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.04470000043511391,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterostructure-field-effect-transistors","display_name":"heterostructure field-effect transistors","score":0.9829999804496765},{"id":"https://openalex.org/keywords/gaas-alas-superlattices","display_name":"GaAs/AlAs superlattices","score":0.9179999828338623},{"id":"https://openalex.org/keywords/s-parameters","display_name":"S-parameters","score":0.6930000185966492},{"id":"https://openalex.org/keywords/equivalent-circuit-extraction","display_name":"equivalent circuit extraction","score":0.9810000061988831},{"id":"https://openalex.org/keywords/photosensitivity","display_name":"photosensitivity","score":0.6600000262260437},{"id":"https://openalex.org/keywords/submicron-devices","display_name":"submicron devices","score":0.7509999871253967}],"concepts":[{"id":"https://openalex.org/C105382558","wikidata":"https://www.wikidata.org/wiki/Q332431","display_name":"Superlattice","level":2,"score":0.7420823574066162},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7005490064620972},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6930188536643982},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6700674891471863},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6514176726341248},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5780127644538879},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5378586053848267},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.49960923194885254},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.4605199098587036},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2538987696170807},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13777083158493042},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1226365864276886},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10635536909103394},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06328696012496948},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/22.32221","doi":"https://doi.org/10.1109/22.32221","is_oa":false,"landing_page_url":"https://doi.org/10.1109/22.32221","pdf_url":null,"source":{"id":"https://openalex.org/S198879913","display_name":"IEEE Transactions on Microwave Theory and Techniques","issn_l":"0018-9480","issn":["0018-9480","1557-9670"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320754","host_organization_name":"IEEE Microwave Theory and Techniques Society","host_organization_lineage":["https://openalex.org/P4310320754"],"host_organization_lineage_names":["IEEE Microwave Theory and Techniques Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Microwave Theory and Techniques","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1966423045","https://openalex.org/W1994874634","https://openalex.org/W2010289906","https://openalex.org/W2021470647","https://openalex.org/W2023302301","https://openalex.org/W2036785018","https://openalex.org/W2050862106","https://openalex.org/W2061809586","https://openalex.org/W2064129485","https://openalex.org/W2097948723","https://openalex.org/W2114013702","https://openalex.org/W2130257804","https://openalex.org/W2132681823","https://openalex.org/W2142070027","https://openalex.org/W2145986287","https://openalex.org/W2152779888","https://openalex.org/W2460485350"],"related_works":["https://openalex.org/W2010104716","https://openalex.org/W1593720127","https://openalex.org/W1498155397","https://openalex.org/W2545983319","https://openalex.org/W2143571157","https://openalex.org/W2788114426","https://openalex.org/W1529574797","https://openalex.org/W3149763130","https://openalex.org/W1963724535","https://openalex.org/W1664711339"],"abstract_inverted_index":{"The":[0,58,80],"RF":[1,34,89],"performance":[2,60],"of":[3,52,61,82,88,97,112],"both":[4,142],"conventional":[5],"AlGaAs-GaAs":[6],"and":[7,20,40,85,109,146],"superlattice":[8,126],"AlAs-GaAs":[9],"heterostructure":[10],"field-effect":[11],"transistors":[12],"(HFETs)":[13],"has":[14],"been":[15],"investigated":[16,100],"at":[17,67,133,139],"120":[18],"K,":[19],"the":[21,29,41,46,53,62,77,86,94,98,107,110,113,144],"results":[22,87,111],"are":[23,56,91,101],"compared":[24],"with":[25],"room-temperature":[26],"values.":[27],"Both":[28],"system":[30],"used":[31,43],"for":[32],"low-temperature":[33,83],"measurements":[35],"up":[36],"to":[37,44,73,76,118],"12":[38],"GHz":[39],"procedure":[42],"extract":[45],"equivalent":[47],"circuit":[48],"from":[49],"measured":[50],"S-parameters":[51],"packaged":[54],"FET":[55],"described.":[57],"high-frequency":[59],"HFETs":[63,99,127],"is":[64,71],"strongly":[65],"improved":[66],"low":[68],"temperatures":[69,141],"but":[70],"sensitive":[72],"light":[74],"due":[75],"device":[78],"structure.":[79],"problems":[81],"measurement":[84],"investigation":[90],"discussed.":[92],"Although":[93],"gate":[95],"lengths":[96],"greater":[102],"than":[103],"1":[104],"mu":[105],"m,":[106],"method":[108],"analysis":[114],"can":[115],"be":[116],"transferred":[117],"submicron":[119,125],"devices":[120],"without":[121],"any":[122],"restrictions.":[123],"Therefore,":[124],"may":[128],"exhibit":[129],"high":[130],"power":[131],"gain":[132],"300":[134],"K":[135],"as":[136,138],"well":[137],"lower":[140],"in":[143],"dark":[145],"under":[147],"illumination.>":[148]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}