{"id":"https://openalex.org/W2018404268","doi":"https://doi.org/10.1109/68.219678","title":"1.0-mA-threshold uncoated lasers by impurity-induced disordering","display_name":"1.0-mA-threshold uncoated lasers by impurity-induced disordering","publication_year":1993,"publication_date":"1993-06-01","ids":{"openalex":"https://openalex.org/W2018404268","doi":"https://doi.org/10.1109/68.219678","mag":"2018404268"},"language":"en","primary_location":{"id":"doi:10.1109/68.219678","doi":"https://doi.org/10.1109/68.219678","is_oa":false,"landing_page_url":"https://doi.org/10.1109/68.219678","pdf_url":null,"source":{"id":"https://openalex.org/S27723657","display_name":"IEEE Photonics Technology Letters","issn_l":"1041-1135","issn":["1041-1135","1941-0174"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Photonics Technology Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040761641","display_name":"W. X. Zou","orcid":"https://orcid.org/0000-0001-7706-8407","observed_orcids":["https://orcid.org/0000-0001-7706-8407"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"W.X. Zou","raw_affiliation_strings":["Department of Optical Interconnects, MS 140-056, AMP, Inc., Harrisburg, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Optical Interconnects, MS 140-056, AMP, Inc., Harrisburg, PA, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"T. Bowen","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Bowen","raw_affiliation_strings":["Department of Optical Interconnects, MS 140-056, AMP, Inc., Harrisburg, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Optical Interconnects, MS 140-056, AMP, Inc., Harrisburg, PA, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111489475","display_name":"K.-K. Law","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I111979921","display_name":"Northwestern University","ror":"https://ror.org/000e0be47","country_code":"US","type":"education","lineage":["https://openalex.org/I111979921"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K.-K. Law","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA","institution_ids":["https://openalex.org/I111979921"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103382858","display_name":"D. Bruce Young","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.B. Young","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Center for Quantized Electronic Structures(QUEST), University of California, Santa Barbara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Center for Quantized Electronic Structures(QUEST), University of California, Santa Barbara, CA, USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087782762","display_name":"Joachim Merz","orcid":"https://orcid.org/0000-0001-5252-5878","observed_orcids":["https://orcid.org/0000-0001-5252-5878","https://orcid.org/0000-0002-1808-6477"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.L. Merz","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Center for Quantized Electronic Structures(QUEST), University of California, Santa Barbara, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Center for Quantized Electronic Structures(QUEST), University of California, Santa Barbara, CA, USA","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":5.7657,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.96223844,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":"5","issue":"6","first_page":"591","last_page":"594"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.8032000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.8032000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.186599999666214,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.0032999999821186066,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/low-threshold-lasers","display_name":"low-threshold lasers","score":0.9300000071525574},{"id":"https://openalex.org/keywords/impurity-induced-disordering","display_name":"impurity-induced disordering","score":0.8980000019073486},{"id":"https://openalex.org/keywords/ingaas-gaas-algaas","display_name":"InGaAs/GaAs/AlGaAs","score":0.9020000100135803},{"id":"https://openalex.org/keywords/double-quantum-wells","display_name":"double quantum wells","score":0.8880000114440918},{"id":"https://openalex.org/keywords/threshold-current","display_name":"threshold current","score":0.6349999904632568},{"id":"https://openalex.org/keywords/room-temperature-continuous-wave-operation","display_name":"room-temperature continuous-wave operation","score":0.8450000286102295},{"id":"https://openalex.org/keywords/quantum-well-design","display_name":"quantum well design","score":0.765999972820282},{"id":"https://openalex.org/keywords/semiconductor-lasers","display_name":"semiconductor lasers","score":0.5770000219345093}],"concepts":[{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.79120934009552},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.708188533782959},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6351881623268127},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.606421709060669},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.5728620886802673},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.48509538173675537},{"id":"https://openalex.org/C99568719","wikidata":"https://www.wikidata.org/wiki/Q1129003","display_name":"Continuous wave","level":3,"score":0.41633448004722595},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.22849124670028687},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22017702460289001},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07781156897544861}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/68.219678","doi":"https://doi.org/10.1109/68.219678","is_oa":false,"landing_page_url":"https://doi.org/10.1109/68.219678","pdf_url":null,"source":{"id":"https://openalex.org/S27723657","display_name":"IEEE Photonics Technology Letters","issn_l":"1041-1135","issn":["1041-1135","1941-0174"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Photonics Technology Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1964955717","https://openalex.org/W1976931321","https://openalex.org/W1979266743","https://openalex.org/W2000925956","https://openalex.org/W2010623615","https://openalex.org/W2013548470","https://openalex.org/W2037541574","https://openalex.org/W2060022218","https://openalex.org/W2068602198","https://openalex.org/W2074878023","https://openalex.org/W2095082396","https://openalex.org/W2109926330","https://openalex.org/W2166072676"],"related_works":["https://openalex.org/W2109926330","https://openalex.org/W1964955717","https://openalex.org/W2125808812","https://openalex.org/W1578787173","https://openalex.org/W2068602198","https://openalex.org/W1763419150","https://openalex.org/W2095569444","https://openalex.org/W2285627935","https://openalex.org/W2001417963","https://openalex.org/W2098880566"],"abstract_inverted_index":{"Low-threshold":[0],"lasers":[1],"fabricated":[2],"by":[3],"impurity-induced":[4],"disordering":[5],"using":[6],"InGaAs/GaAs/AlGaAs":[7],"double-quantum-well":[8],"material":[9],"are":[10],"discussed.":[11],"Threshold":[12],"current":[13],"as":[14,16],"low":[15,33],"1.0":[17],"mA":[18],"under":[19],"room-temperature":[20],"continuous-wave":[21],"operation":[22],"was":[23],"obtained":[24],"for":[25,41],"uncoated":[26],"lasers.":[27],"Experimental":[28],"data":[29],"show":[30],"that":[31],"this":[32],"threshold":[34],"is":[35],"mainly":[36],"due":[37],"to":[38],"the":[39,43,49],"optimizations":[40],"both":[42],"quantum":[44],"well":[45],"(QW)":[46],"design":[47],"and":[48],"device":[50],"structures.>":[51]},"counts_by_year":[],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2016-06-24T00:00:00"}