{"id":"https://openalex.org/W2018373380","doi":"https://doi.org/10.1143/jjap.35.l289","title":"High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2\u00d72) and (4\u00d74) Reflection High Energy Electron Diffraction Patterns","display_name":"High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2\u00d72) and (4\u00d74) Reflection High Energy Electron Diffraction Patterns","publication_year":1996,"publication_date":"1996-03-01","ids":{"openalex":"https://openalex.org/W2018373380","doi":"https://doi.org/10.1143/jjap.35.l289","mag":"2018373380"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.35.l289","doi":"https://doi.org/10.1143/jjap.35.l289","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.35.l289","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.35.L289/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.35.L289/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110766869","display_name":"Kakuya Iwata","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405287424","display_name":"The Institute of Scientific and Industrial Research, The University of Osaka","ror":"https://ror.org/053t3hh85","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405287424","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kakuya Iwata","raw_affiliation_strings":["The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan","institution_ids":["https://openalex.org/I4405287424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017480216","display_name":"H. Asahi","orcid":"https://orcid.org/0000-0002-2605-8572","observed_orcids":["https://orcid.org/0000-0002-2605-8572"]},"institutions":[{"id":"https://openalex.org/I4405287424","display_name":"The Institute of Scientific and Industrial Research, The University of Osaka","ror":"https://ror.org/053t3hh85","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405287424","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hajime Asahi","raw_affiliation_strings":["The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan","institution_ids":["https://openalex.org/I4405287424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113768605","display_name":"Soon Jae Yu","orcid":"https://orcid.org/0009-0004-4663-6087","observed_orcids":["https://orcid.org/0009-0004-4663-6087"]},"institutions":[{"id":"https://openalex.org/I51926615","display_name":"Sun Moon University","ror":"https://ror.org/009e5cd49","country_code":"KR","type":"education","lineage":["https://openalex.org/I51926615"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Soon Jae Yu","raw_affiliation_strings":["Department of Electronics Engineering, Sun Moon University, Tang Jeong Myeon, Asankun, Chung Nan 337-840, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Sun Moon University, Tang Jeong Myeon, Asankun, Chung Nan 337-840, Korea","institution_ids":["https://openalex.org/I51926615"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113611836","display_name":"Kumiko Asami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I51926615","display_name":"Sun Moon University","ror":"https://ror.org/009e5cd49","country_code":"KR","type":"education","lineage":["https://openalex.org/I51926615"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kumiko Asami","raw_affiliation_strings":["Department of Electronics Engineering, Sun Moon University, Tang Jeong Myeon, Asankun, Chung Nan 337-840, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Sun Moon University, Tang Jeong Myeon, Asankun, Chung Nan 337-840, Korea","institution_ids":["https://openalex.org/I51926615"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hideki Fujita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405275672","display_name":"Nissin Electric Co., Ltd. (Japan)","ror":"https://ror.org/04359f544","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405275672"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideki Fujita","raw_affiliation_strings":["Nissin Electric Co., Ltd., Umezu-takase, Ukyo-ku, Kyoto 615, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nissin Electric Co., Ltd., Umezu-takase, Ukyo-ku, Kyoto 615, Japan","institution_ids":["https://openalex.org/I4405275672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047821622","display_name":"M. Fushida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405287424","display_name":"The Institute of Scientific and Industrial Research, The University of Osaka","ror":"https://ror.org/053t3hh85","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405287424","https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masahiro Fushida Masahiro Fushida","raw_affiliation_strings":["The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan","institution_ids":["https://openalex.org/I4405287424"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111879046","display_name":"Shun\u2010ichi Gonda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405275672","display_name":"Nissin Electric Co., Ltd. (Japan)","ror":"https://ror.org/04359f544","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405275672"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shun-ichi Gonda Shun-ichi Gonda","raw_affiliation_strings":["Nissin Electric Co., Ltd., Umezu-takase, Ukyo-ku, Kyoto 615, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nissin Electric Co., Ltd., Umezu-takase, Ukyo-ku, Kyoto 615, Japan","institution_ids":["https://openalex.org/I4405275672"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":11.0143,"has_fulltext":true,"cited_by_count":102,"citation_normalized_percentile":{"value":0.99117283,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"35","issue":"3A","first_page":"L289","last_page":"L289"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan","display_name":"GaN","score":0.7689999938011169},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.8889999985694885},{"id":"https://openalex.org/keywords/nitrogen-source","display_name":"nitrogen source","score":0.6650000214576721},{"id":"https://openalex.org/keywords/surface-flatness","display_name":"surface flatness","score":0.7839999794960022},{"id":"https://openalex.org/keywords/epitaxial-quality","display_name":"epitaxial quality","score":0.6890000104904175}],"concepts":[{"id":"https://openalex.org/C200096950","wikidata":"https://www.wikidata.org/wiki/Q455003","display_name":"Reflection high-energy electron diffraction","level":4,"score":0.8629575371742249},{"id":"https://openalex.org/C175361016","wikidata":"https://www.wikidata.org/wiki/Q245591","display_name":"Electron cyclotron resonance","level":3,"score":0.8528101444244385},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.8076993823051453},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.6943308115005493},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.6111442446708679},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4962497353553772},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.45156314969062805},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.44439005851745605},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.38588687777519226},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35491305589675903},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.3450421392917633},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3394126892089844},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.23852315545082092},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.13812243938446045},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.07639193534851074},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06002175807952881},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.35.l289","doi":"https://doi.org/10.1143/jjap.35.l289","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.35.l289","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.35.L289/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.35.l289","doi":"https://doi.org/10.1143/jjap.35.l289","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.35.l289","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.35.L289/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2018373380.pdf","grobid_xml":"https://content.openalex.org/works/W2018373380.grobid-xml"},"referenced_works_count":12,"referenced_works":["https://openalex.org/W1986284610","https://openalex.org/W1994376250","https://openalex.org/W1997273743","https://openalex.org/W2003999691","https://openalex.org/W2004148744","https://openalex.org/W2016904935","https://openalex.org/W2025613147","https://openalex.org/W2027197488","https://openalex.org/W2060125404","https://openalex.org/W2076007703","https://openalex.org/W2084226294","https://openalex.org/W2087081757"],"related_works":["https://openalex.org/W2055064756","https://openalex.org/W1997273743","https://openalex.org/W2047596171","https://openalex.org/W4213339871","https://openalex.org/W2033046829","https://openalex.org/W2275492744","https://openalex.org/W2232756744","https://openalex.org/W2000355181","https://openalex.org/W2036225599","https://openalex.org/W313298135"],"abstract_inverted_index":{"GaN":[0,48,66],"layers":[1,49],"are":[2,50,63],"grown":[3],"on":[4,25],"(0001)":[5],"sapphire":[6],"substrate":[7],"by":[8],"electron":[9,60],"cyclotron":[10],"resonance":[11],"molecular":[12],"beam":[13],"epitaxy":[14],"(ECR-MBE)":[15],"using":[16],"an":[17],"ECR":[18,42,90],"plasma":[19,43,91],"cell":[20,27,44],"with":[21],"ion":[22,37],"removal":[23,38],"magnets":[24,39],"the":[26,30,36,85,88],"top":[28],"for":[29],"nitrogen":[31],"source.":[32],"The":[33],"efficiency":[34],"of":[35,80,87],"in":[40],"this":[41],"is":[45],"99%.":[46],"High-quality":[47],"obtained.":[51],"In":[52],"particular,":[53],"(2\u00d72)":[54],"and":[55,68,77],"(4\u00d74)":[56],"RHEED":[57],"(reflection":[58],"high-energy":[59],"diffraction)":[61],"patterns":[62],"observed":[64],"during":[65,69],"growth":[67],"cooling":[70],"after":[71],"growth,":[72],"respectively,":[73],"indicating":[74],"a":[75],"flat":[76],"smooth":[78],"surface":[79],"GaN.":[81],"These":[82],"results":[83],"show":[84],"superiority":[86],"ion-removed":[89],"cell.":[92]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-10-29T09:56:32.521200","created_date":"2016-06-24T00:00:00"}