{"id":"https://openalex.org/W2018182802","doi":"https://doi.org/10.1016/j.ssc.2004.01.015","title":"Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography","display_name":"Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography","publication_year":2004,"publication_date":"2004-01-30","ids":{"openalex":"https://openalex.org/W2018182802","doi":"https://doi.org/10.1016/j.ssc.2004.01.015","mag":"2018182802"},"language":"en","primary_location":{"id":"doi:10.1016/j.ssc.2004.01.015","doi":"https://doi.org/10.1016/j.ssc.2004.01.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.ssc.2004.01.015","pdf_url":null,"source":{"id":"https://openalex.org/S82088436","display_name":"Solid State Communications","issn_l":"0038-1098","issn":["0038-1098","1879-2766"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid State Communications","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101659241","display_name":"S.F. Hu","orcid":"https://orcid.org/0000-0003-1187-980X","observed_orcids":["https://orcid.org/0000-0003-1187-980X"]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"S.F. Hu","raw_affiliation_strings":["National Nano Device Laboratories, 1001-1 Ta Hsueh Road, Hsinchu 300, Taiwan, ROC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Nano Device Laboratories, 1001-1 Ta Hsueh Road, Hsinchu 300, Taiwan, ROC","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046993278","display_name":"Wei\u2010Chung Weng","orcid":"https://orcid.org/0000-0002-1644-105X","observed_orcids":["https://orcid.org/0000-0002-1644-105X"]},"institutions":[{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"W.C. Weng","raw_affiliation_strings":["Department of Electronics Engineering, I-Shou University, Kaohsiung 840, Taiwan, ROC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, I-Shou University, Kaohsiung 840, Taiwan, ROC","institution_ids":["https://openalex.org/I98298690"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053250596","display_name":"Yuxi Wan","orcid":"https://orcid.org/0000-0002-2883-7035","observed_orcids":["https://orcid.org/0000-0002-2883-7035"]},"institutions":[{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Y.M. Wan","raw_affiliation_strings":["Department of Electronics Engineering, I-Shou University, Kaohsiung 840, Taiwan, ROC"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, I-Shou University, Kaohsiung 840, Taiwan, ROC","institution_ids":["https://openalex.org/I98298690"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5101659241"],"corresponding_institution_ids":[],"apc_list":{"value":2960,"currency":"USD","value_usd":2960},"apc_paid":null,"fwci":0.4066,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.54527938,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":"130","issue":"1-2","first_page":"111","last_page":"114"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.4846000075340271,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.4846000075340271,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.2694999873638153,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.05640000104904175,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-nanowires","display_name":"silicon nanowires","score":0.996999979019165},{"id":"https://openalex.org/keywords/electron-beam-lithography","display_name":"electron beam lithography","score":0.9449999928474426},{"id":"https://openalex.org/keywords/proximity-effect","display_name":"proximity effect","score":0.9309999942779541},{"id":"https://openalex.org/keywords/accumulation-effect","display_name":"accumulation effect","score":0.9729999899864197},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.7749999761581421},{"id":"https://openalex.org/keywords/coulomb-blockade","display_name":"Coulomb blockade","score":0.8629999756813049},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.5899999737739563},{"id":"https://openalex.org/keywords/gate-potential","display_name":"gate potential","score":0.6769999861717224},{"id":"https://openalex.org/keywords/one-dimensional-nanostructures","display_name":"one-dimensional nanostructures","score":0.6100000143051147}],"concepts":[{"id":"https://openalex.org/C200274948","wikidata":"https://www.wikidata.org/wiki/Q256845","display_name":"Electron-beam lithography","level":4,"score":0.8601313829421997},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7907614707946777},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.6969782114028931},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6837348937988281},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6807229518890381},{"id":"https://openalex.org/C2777953097","wikidata":"https://www.wikidata.org/wiki/Q7252868","display_name":"Proximity effect (electron beam lithography)","level":5,"score":0.6286376118659973},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.608813464641571},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5118486285209656},{"id":"https://openalex.org/C117206207","wikidata":"https://www.wikidata.org/wiki/Q475790","display_name":"Coulomb blockade","level":4,"score":0.5035318732261658},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4578832685947418},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.4512251913547516},{"id":"https://openalex.org/C95312477","wikidata":"https://www.wikidata.org/wiki/Q207340","display_name":"Cathode ray","level":3,"score":0.4467580020427704},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4386940896511078},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4011135697364807},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.36707594990730286},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.36217838525772095},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.25092893838882446},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22655177116394043},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09335237741470337},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0673632025718689},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05805546045303345},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.ssc.2004.01.015","doi":"https://doi.org/10.1016/j.ssc.2004.01.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.ssc.2004.01.015","pdf_url":null,"source":{"id":"https://openalex.org/S82088436","display_name":"Solid State Communications","issn_l":"0038-1098","issn":["0038-1098","1879-2766"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid State Communications","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321040","display_name":"National Science Council","ror":"https://ror.org/02kv4zf79"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1967973741","https://openalex.org/W1987570669","https://openalex.org/W1989909349","https://openalex.org/W2019490526","https://openalex.org/W2040314404","https://openalex.org/W2042812206","https://openalex.org/W2061684091","https://openalex.org/W2065097712","https://openalex.org/W2086129587","https://openalex.org/W2093200558"],"related_works":["https://openalex.org/W2214196395","https://openalex.org/W1971143287","https://openalex.org/W2113862450","https://openalex.org/W1984411960","https://openalex.org/W2046572746","https://openalex.org/W2082770903","https://openalex.org/W2056170270","https://openalex.org/W2265163307","https://openalex.org/W2277220273","https://openalex.org/W2073755673"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}