{"id":"https://openalex.org/W2018018428","doi":"https://doi.org/10.1109/drc.2014.6872327","title":"InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","display_name":"InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W2018018428","doi":"https://doi.org/10.1109/drc.2014.6872327","mag":"2018018428"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2014.6872327","doi":"https://doi.org/10.1109/drc.2014.6872327","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2014.6872327","pdf_url":null,"source":{"id":"https://openalex.org/S4210174617","display_name":"Conference digest","issn_l":"1548-3770","issn":["1548-3770","2640-6853"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"72nd Device Research Conference","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109368621","display_name":"Yuichi Mishima","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuichi Mishima","raw_affiliation_strings":["Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103267865","display_name":"Toru Kanazawa","orcid":"https://orcid.org/0000-0002-0808-7062","observed_orcids":["https://orcid.org/0000-0002-0808-7062"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toru Kanazawa","raw_affiliation_strings":["Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057419635","display_name":"Haruki Kinoshita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Haruki Kinoshita","raw_affiliation_strings":["Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Eiji Uehara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Eiji Uehara","raw_affiliation_strings":["Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030379928","display_name":"Yasuyuki Miyamoto","orcid":"https://orcid.org/0000-0002-2676-7264","observed_orcids":["https://orcid.org/0000-0002-2676-7264"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasuyuki Miyamoto","raw_affiliation_strings":["Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. Physical Electronics, Tokyo Institute of Technology 2-12-1-S9-2, Japan","institution_ids":["https://openalex.org/I114531698"]},{"raw_affiliation_string":"Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":null,"apc_paid":null,"fwci":1.6215,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.81002962,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":98},"biblio":{"volume":"4","issue":null,"first_page":"121","last_page":"122"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.009800000116229057,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingaas-mosfet","display_name":"InGaAs MOSFET","score":0.8930000066757202},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.6740000247955322},{"id":"https://openalex.org/keywords/current-drivability","display_name":"current drivability","score":0.9520000219345093}],"concepts":[{"id":"https://openalex.org/C48209547","wikidata":"https://www.wikidata.org/wiki/Q1331104","display_name":"Controllability","level":2,"score":0.8061776161193848},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.7731029987335205},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.6806195378303528},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6013153195381165},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.577483057975769},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5671159625053406},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5517973303794861},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4925287663936615},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4449359178543091},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.42287421226501465},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38919597864151},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36574864387512207},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.32658302783966064},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18129533529281616},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17628642916679382},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17266911268234253},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.16109159588813782},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13265711069107056},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09157368540763855},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08322218060493469},{"id":"https://openalex.org/C28826006","wikidata":"https://www.wikidata.org/wiki/Q33521","display_name":"Applied mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2014.6872327","doi":"https://doi.org/10.1109/drc.2014.6872327","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2014.6872327","pdf_url":null,"source":{"id":"https://openalex.org/S4210174617","display_name":"Conference digest","issn_l":"1548-3770","issn":["1548-3770","2640-6853"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"72nd Device Research Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2012496420","https://openalex.org/W4244093052"],"related_works":["https://openalex.org/W1987339999","https://openalex.org/W2611336072","https://openalex.org/W2952946718","https://openalex.org/W2473406916","https://openalex.org/W2123581407","https://openalex.org/W2054891730","https://openalex.org/W2490958351","https://openalex.org/W2074946341","https://openalex.org/W1988951675","https://openalex.org/W7047953931"],"abstract_inverted_index":{"InGaAs":[0],"MOSFETs":[1],"are":[2],"attractive":[3],"candidate":[4],"for":[5,57],"future":[6],"high-speed":[7],"and":[8,34,61],"low-power-consumption":[9],"devices.":[10],"To":[11],"enhance":[12],"the":[13,25,31,35,41,45,53,65],"performance":[14],"of":[15,64],"that,":[16],"we":[17,51],"propose":[18],"a":[19],"novel":[20],"device":[21,66],"structure":[22,33,60],"which":[23],"contains":[24],"superior":[26],"current":[27,37,62],"controllability":[28],"due":[29,39],"to":[30,40],"tri-gate":[32],"high":[36],"drivability":[38],"n+-InGaAs":[42],"source":[43,54],"surrounding":[44],"non-planar":[46,58],"channel.":[47],"In":[48],"this":[49],"report,":[50],"demonstrate":[52],"regrowth":[55],"process":[56],"channel":[59],"characteristics":[63],"fabricated":[67],"by":[68],"using":[69],"regrowth.":[70]},"counts_by_year":[{"year":2021,"cited_by_count":2},{"year":2016,"cited_by_count":4}],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2016-06-24T00:00:00"}