{"id":"https://openalex.org/W2017997901","doi":"https://doi.org/10.1063/1.2718516","title":"Excitonic ultraviolet lasing in ZnO-based light emitting devices","display_name":"Excitonic ultraviolet lasing in ZnO-based light emitting devices","publication_year":2007,"publication_date":"2007-03-26","ids":{"openalex":"https://openalex.org/W2017997901","doi":"https://doi.org/10.1063/1.2718516","mag":"2017997901"},"language":"en","primary_location":{"id":"doi:10.1063/1.2718516","doi":"https://doi.org/10.1063/1.2718516","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2718516","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109967046","display_name":"Yungryel Ryu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Y. R. Ryu","raw_affiliation_strings":["MOXtronics, Inc. , 1309 Elsdon Court, Columbia, Missouri 65203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOXtronics, Inc. , 1309 Elsdon Court, Columbia, Missouri 65203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055545325","display_name":"Jorge A. Lubguban","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. A. Lubguban","raw_affiliation_strings":["MOXtronics, Inc. , 1309 Elsdon Court, Columbia, Missouri 65203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOXtronics, Inc. , 1309 Elsdon Court, Columbia, Missouri 65203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054419589","display_name":"T. S. Lee","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. S. Lee","raw_affiliation_strings":["MOXtronics, Inc. , 1309 Elsdon Court, Columbia, Missouri 65203"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MOXtronics, Inc. , 1309 Elsdon Court, Columbia, Missouri 65203","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046731100","display_name":"H. W. White","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I76835614","display_name":"University of Missouri","ror":"https://ror.org/02ymw8z06","country_code":"US","type":"education","lineage":["https://openalex.org/I76835614"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. W. White","raw_affiliation_strings":["University of Missouri Department of Physics and Astronomy, , Columbia, Missouri 65211"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Missouri Department of Physics and Astronomy, , Columbia, Missouri 65211","institution_ids":["https://openalex.org/I76835614"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027639938","display_name":"T. S. Jeong","orcid":"https://orcid.org/0009-0000-8914-1616","observed_orcids":["https://orcid.org/0009-0000-8914-1616"]},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"T. S. Jeong","raw_affiliation_strings":["Chonbuk National University Semiconductor Physics Research Center, , Jeonju 561-756, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chonbuk National University Semiconductor Physics Research Center, , Jeonju 561-756, Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111678027","display_name":"C. J. Youn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"C. J. Youn","raw_affiliation_strings":["Chonbuk National University Semiconductor Physics Research Center, , Jeonju 561-756, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chonbuk National University Semiconductor Physics Research Center, , Jeonju 561-756, Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063955669","display_name":"B. J. Kim","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"B. J. Kim","raw_affiliation_strings":["NINEX Co. Ltd. , 449-12 Mogok-Dong, PyongTaek-City, Kyongki-Do 459-040, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NINEX Co. Ltd. , 449-12 Mogok-Dong, PyongTaek-City, Kyongki-Do 459-040, Korea","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":12.214,"has_fulltext":false,"cited_by_count":194,"citation_normalized_percentile":{"value":0.99415893,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":100},"biblio":{"volume":"90","issue":"13","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.0035000001080334187,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.00279999990016222,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ultraviolet-laser-diodes","display_name":"ultraviolet laser diodes","score":0.972000002861023},{"id":"https://openalex.org/keywords/zinc-oxide","display_name":"zinc oxide","score":0.9039999842643738},{"id":"https://openalex.org/keywords/multiple-quantum-wells","display_name":"multiple quantum wells","score":0.8899999856948853},{"id":"https://openalex.org/keywords/p-n-heterojunction","display_name":"p-n heterojunction","score":0.8479999899864197},{"id":"https://openalex.org/keywords/exciton-binding-energy","display_name":"exciton binding energy","score":0.8640000224113464},{"id":"https://openalex.org/keywords/room-temperature-lasing","display_name":"room-temperature lasing","score":0.8309999704360962},{"id":"https://openalex.org/keywords/optical-pumping","display_name":"optical pumping","score":0.621999979019165},{"id":"https://openalex.org/keywords/current-injection","display_name":"current injection","score":0.48899999260902405}],"concepts":[{"id":"https://openalex.org/C40637687","wikidata":"https://www.wikidata.org/wiki/Q676237","display_name":"Lasing threshold","level":3,"score":0.9270080327987671},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7911805510520935},{"id":"https://openalex.org/C17729963","wikidata":"https://www.wikidata.org/wiki/Q858289","display_name":"Exciton","level":2,"score":0.7781798243522644},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.767020583152771},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.6643206477165222},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6145612001419067},{"id":"https://openalex.org/C2776026197","wikidata":"https://www.wikidata.org/wiki/Q201890","display_name":"Active layer","level":4,"score":0.6090130805969238},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5381828546524048},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.535281777381897},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5010321140289307},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4954746961593628},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.47013431787490845},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.43969354033470154},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.22657078504562378},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14600306749343872},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.10882019996643066},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.08392870426177979},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07352006435394287},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2718516","doi":"https://doi.org/10.1063/1.2718516","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2718516","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1587304187","https://openalex.org/W1965271793","https://openalex.org/W1965628557","https://openalex.org/W1971268970","https://openalex.org/W1979002763","https://openalex.org/W1988129333","https://openalex.org/W2002169789","https://openalex.org/W2006525612","https://openalex.org/W2013819538","https://openalex.org/W2016418238","https://openalex.org/W2022421325","https://openalex.org/W2036981012","https://openalex.org/W2038815323","https://openalex.org/W2083447119"],"related_works":["https://openalex.org/W2028788023","https://openalex.org/W1964394114","https://openalex.org/W2391311988","https://openalex.org/W2141552132","https://openalex.org/W2086880742","https://openalex.org/W1988129333","https://openalex.org/W2315460894","https://openalex.org/W3115927110","https://openalex.org/W2967697368","https://openalex.org/W7145823707"],"abstract_inverted_index":{"The":[0,12,30,54,86],"authors":[1],"have":[2,14],"fabricated":[3],"ultraviolet":[4],"(UV)":[5],"laser":[6,78],"diodes":[7,76],"based":[8],"on":[9],"ZnO\u2215BeZnO":[10,47],"films.":[11],"devices":[13],"p-n":[15],"heterojunction":[16],"structures":[17],"with":[18],"a":[19],"multiple":[20],"quantum":[21],"well":[22],"(MQW)":[23],"active":[24,32],"layer":[25,33],"sandwiched":[26],"between":[27],"guide-confinement":[28,42],"layers.":[29],"MQW":[31,60],"comprises":[34],"undoped":[35],"ZnO":[36],"and":[37,48],"BeZnO,":[38],"while":[39],"the":[40,59,73],"two":[41],"layers":[43],"were":[44],"As-doped":[45],"p-type":[46],"Ga-doped":[49],"n-type":[50],"BeZnO\u2215ZnO":[51],"films,":[52],"respectively.":[53],"exciton":[55],"binding":[56],"energy":[57],"in":[58],"region":[61],"is":[62,89],"exceptionally":[63],"large":[64],"(263meV).":[65],"Exciton-related":[66],"lasing":[67,87],"was":[68],"observed":[69],"by":[70,80],"optically":[71],"pumping":[72],"MQWs.":[74],"ZnO\u2215BeZnO-based":[75],"showed":[77],"action":[79],"current":[81],"injection":[82],"at":[83],"room":[84],"temperature.":[85],"mechanism":[88],"inelastic":[90],"exciton-exciton":[91],"collision.":[92]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":9},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":9},{"year":2016,"cited_by_count":9},{"year":2015,"cited_by_count":7},{"year":2014,"cited_by_count":9},{"year":2013,"cited_by_count":21},{"year":2012,"cited_by_count":20}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}