{"id":"https://openalex.org/W2017852015","doi":"https://doi.org/10.1063/1.348380","title":"Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs","display_name":"Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAs","publication_year":1991,"publication_date":"1991-04-15","ids":{"openalex":"https://openalex.org/W2017852015","doi":"https://doi.org/10.1063/1.348380","mag":"2017852015"},"language":"en","primary_location":{"id":"doi:10.1063/1.348380","doi":"https://doi.org/10.1063/1.348380","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.348380","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110482541","display_name":"Hirohiko Sugahara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirohiko Sugahara","raw_affiliation_strings":["NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110062177","display_name":"Masaharu Oshima","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaharu Oshima","raw_affiliation_strings":["NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Applied Electronics Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004407375","display_name":"Haruhiro Oigawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Haruhiro Oigawa","raw_affiliation_strings":["Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan","institution_ids":["https://openalex.org/I146399215"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067838223","display_name":"Hidemi Shigekawa","orcid":"https://orcid.org/0000-0001-9550-5148","observed_orcids":["https://orcid.org/0000-0001-9550-5148"]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hidemi Shigekawa","raw_affiliation_strings":["Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan","institution_ids":["https://openalex.org/I146399215"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113946979","display_name":"Yasuo Nannichi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146399215","display_name":"University of Tsukuba","ror":"https://ror.org/02956yf07","country_code":"JP","type":"education","lineage":["https://openalex.org/I146399215"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasuo Nannichi","raw_affiliation_strings":["Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan","institution_ids":["https://openalex.org/I146399215"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":9.0777,"has_fulltext":false,"cited_by_count":131,"citation_normalized_percentile":{"value":0.98935226,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":92,"max":98},"biblio":{"volume":"69","issue":"8","first_page":"4349","last_page":"4353"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9009000062942505,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9009000062942505,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12039","display_name":"Electron and X-Ray Spectroscopy Techniques","score":0.017899999395012856,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.01360000018030405,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ammonium-sulfide","display_name":"ammonium sulfide","score":0.8629999756813049},{"id":"https://openalex.org/keywords/s-s-bonding","display_name":"S\u2013S bonding","score":0.8840000033378601},{"id":"https://openalex.org/keywords/surface-passivation","display_name":"surface passivation","score":0.7829999923706055},{"id":"https://openalex.org/keywords/fermi-level-shift","display_name":"Fermi level shift","score":0.7789999842643738},{"id":"https://openalex.org/keywords/flat-bands","display_name":"flat bands","score":0.5740000009536743},{"id":"https://openalex.org/keywords/vacuum-annealing","display_name":"vacuum annealing","score":0.8500000238418579}],"concepts":[{"id":"https://openalex.org/C16332341","wikidata":"https://www.wikidata.org/wiki/Q212871","display_name":"Synchrotron radiation","level":2,"score":0.723166286945343},{"id":"https://openalex.org/C40636707","wikidata":"https://www.wikidata.org/wiki/Q13633683","display_name":"Fermi level","level":3,"score":0.6959415674209595},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6670519113540649},{"id":"https://openalex.org/C51286037","wikidata":"https://www.wikidata.org/wiki/Q1139350","display_name":"Photoemission spectroscopy","level":3,"score":0.6062145829200745},{"id":"https://openalex.org/C4839761","wikidata":"https://www.wikidata.org/wiki/Q212111","display_name":"Spectral line","level":2,"score":0.5195370316505432},{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.4885741174221039},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.44932398200035095},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4089699685573578},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4008123278617859},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3899800181388855},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.1736074686050415},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.13786184787750244},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.12698394060134888},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10319024324417114},{"id":"https://openalex.org/C1276947","wikidata":"https://www.wikidata.org/wiki/Q333","display_name":"Astronomy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.348380","doi":"https://doi.org/10.1063/1.348380","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.348380","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1607286065","https://openalex.org/W1980061358","https://openalex.org/W1991940431","https://openalex.org/W1996623232","https://openalex.org/W2003184404","https://openalex.org/W2006112390","https://openalex.org/W2006164064","https://openalex.org/W2007566610","https://openalex.org/W2007778215","https://openalex.org/W2015311330","https://openalex.org/W2030681819","https://openalex.org/W2034770680","https://openalex.org/W2040595962","https://openalex.org/W2051331726","https://openalex.org/W2055157432","https://openalex.org/W2063343185","https://openalex.org/W2067128058","https://openalex.org/W2075726544","https://openalex.org/W2084306821","https://openalex.org/W2087472124","https://openalex.org/W2142747357","https://openalex.org/W2739616593"],"related_works":["https://openalex.org/W2006164064","https://openalex.org/W4254843153","https://openalex.org/W2001152329","https://openalex.org/W7067692195","https://openalex.org/W2077794263","https://openalex.org/W2028097024","https://openalex.org/W1985735129","https://openalex.org/W2009576136","https://openalex.org/W1013084212","https://openalex.org/W2082256022"],"abstract_inverted_index":{"The":[0,84,101],"chemistry":[1],"of":[2,37,86,106,135,142],"the":[3,63,87,107,118,129,136,159],"(NH4)2Sx-treated":[4],"n-GaAs":[5],"(100)":[6],"surfaces":[7,109],"has":[8],"been":[9],"studied":[10],"using":[11],"synchrotron":[12],"radiation":[13],"photoemission":[14,23],"spectroscopy.":[15],"Ga":[16],"3d,":[17,19],"As":[18],"and":[20,28,57,67],"S":[21,42],"2p":[22,43],"spectra":[24,46],"are":[25,60],"measured":[26],"before":[27],"after":[29,74,153],"annealing":[30,75],"in":[31,82,166],"vacuum":[32],"with":[33],"a":[34,146],"photon":[35],"energy":[36],"about":[38,94,114,124],"210":[39],"eV,":[40],"where":[41],"core":[44],"level":[45,104],"can":[47],"be":[48,113],"sensitively":[49],"detected.":[50],"It":[51,155],"is":[52,91,110,123,150,156],"found":[53,157],"that":[54,68,134,158],"Ga-S,":[55],"As-S,":[56],"S-S":[58],"bonds":[59,71],"formed":[61],"on":[62],"as-treated":[64,108],"GaAs":[65,168],"surfaces,":[66],"stable":[69],"Ga-S":[70,160],"become":[72],"dominant":[73],"at":[76],"360":[77],"\u00b0C":[78],"for":[79],"10":[80],"min":[81],"vacuum.":[83],"thickness":[85],"surface":[88,102],"sulfide":[89],"layer":[90],"reduced":[92],"from":[93],"0.5":[95],"to":[96,112,128],"0.3":[97,143],"nm":[98],"by":[99],"annealing.":[100,154],"Fermi-":[103],"position":[105],"determined":[111],"0.8":[115],"eV":[116,126,144],"below":[117],"conduction":[119],"band":[120,131,148],"minimum,":[121],"which":[122],"0.1":[125],"closer":[127],"valence":[130],"maximum":[132],"than":[133],"untreated":[137],"surfaces.":[138,169],"A":[139],"Fermi-level":[140],"shift":[141],"toward":[145],"flat":[147],"condition":[149],"also":[151],"observed":[152],"bonding":[161],"plays":[162],"an":[163],"important":[164],"role":[165],"passivating":[167]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}