{"id":"https://openalex.org/W2017725825","doi":"https://doi.org/10.1109/ted.2010.2087024","title":"Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate","display_name":"Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate","publication_year":2010,"publication_date":"2010-11-10","ids":{"openalex":"https://openalex.org/W2017725825","doi":"https://doi.org/10.1109/ted.2010.2087024","mag":"2017725825"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2010.2087024","doi":"https://doi.org/10.1109/ted.2010.2087024","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2010.2087024","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022393457","display_name":"Hock Jin Quah","orcid":"https://orcid.org/0000-0002-7338-9489","observed_orcids":["https://orcid.org/0000-0002-7338-9489"]},"institutions":[{"id":"https://openalex.org/I112982808","display_name":"Universiti Sains Islam Malaysia","ror":"https://ror.org/020ast312","country_code":"MY","type":"education","lineage":["https://openalex.org/I112982808"]},{"id":"https://openalex.org/I139322472","display_name":"Universiti Sains Malaysia","ror":"https://ror.org/02rgb2k63","country_code":"MY","type":"education","lineage":["https://openalex.org/I139322472"]}],"countries":["MY"],"is_corresponding":false,"raw_author_name":"Hock Jin Quah","raw_affiliation_strings":["Energy-Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Islam Malaysia, Nibong Tebal, Pahang, Malaysia","Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Energy-Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Islam Malaysia, Nibong Tebal, Pahang, Malaysia","institution_ids":["https://openalex.org/I112982808"]},{"raw_affiliation_string":"Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia","institution_ids":["https://openalex.org/I139322472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007942414","display_name":"Kuan Yew Cheong","orcid":"https://orcid.org/0000-0001-8049-0297","observed_orcids":["https://orcid.org/0000-0001-8049-0297"]},"institutions":[{"id":"https://openalex.org/I112982808","display_name":"Universiti Sains Islam Malaysia","ror":"https://ror.org/020ast312","country_code":"MY","type":"education","lineage":["https://openalex.org/I112982808"]},{"id":"https://openalex.org/I139322472","display_name":"Universiti Sains Malaysia","ror":"https://ror.org/02rgb2k63","country_code":"MY","type":"education","lineage":["https://openalex.org/I139322472"]}],"countries":["MY"],"is_corresponding":false,"raw_author_name":"Kuan Yew Cheong","raw_affiliation_strings":["Energy-Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Islam Malaysia, Nibong Tebal, Pahang, Malaysia","Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Energy-Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Islam Malaysia, Nibong Tebal, Pahang, Malaysia","institution_ids":["https://openalex.org/I112982808"]},{"raw_affiliation_string":"Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia","institution_ids":["https://openalex.org/I139322472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024758865","display_name":"Zainuriah Hassan","orcid":"https://orcid.org/0000-0003-0403-8391","observed_orcids":["https://orcid.org/0000-0003-0403-8391"]},"institutions":[{"id":"https://openalex.org/I112982808","display_name":"Universiti Sains Islam Malaysia","ror":"https://ror.org/020ast312","country_code":"MY","type":"education","lineage":["https://openalex.org/I112982808"]},{"id":"https://openalex.org/I139322472","display_name":"Universiti Sains Malaysia","ror":"https://ror.org/02rgb2k63","country_code":"MY","type":"education","lineage":["https://openalex.org/I139322472"]}],"countries":["MY"],"is_corresponding":false,"raw_author_name":"Zainuriah Hassan","raw_affiliation_strings":["School of Physics, Universiti Sains Islam Malaysia, Minden, Penang, Malaysia","Sch. of Phys., Univ. Sains Malaysia, Minden, Malaysia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics, Universiti Sains Islam Malaysia, Minden, Penang, Malaysia","institution_ids":["https://openalex.org/I112982808"]},{"raw_affiliation_string":"Sch. of Phys., Univ. Sains Malaysia, Minden, Malaysia","institution_ids":["https://openalex.org/I139322472"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019524167","display_name":"Zainovia Lockman","orcid":"https://orcid.org/0000-0002-1535-8035","observed_orcids":["https://orcid.org/0000-0002-1535-8035"]},"institutions":[{"id":"https://openalex.org/I112982808","display_name":"Universiti Sains Islam Malaysia","ror":"https://ror.org/020ast312","country_code":"MY","type":"education","lineage":["https://openalex.org/I112982808"]},{"id":"https://openalex.org/I139322472","display_name":"Universiti Sains Malaysia","ror":"https://ror.org/02rgb2k63","country_code":"MY","type":"education","lineage":["https://openalex.org/I139322472"]}],"countries":["MY"],"is_corresponding":false,"raw_author_name":"Zainovia Lockman","raw_affiliation_strings":["Energy-Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Islam Malaysia, Nibong Tebal, Pahang, Malaysia","Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Energy-Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Islam Malaysia, Nibong Tebal, Pahang, Malaysia","institution_ids":["https://openalex.org/I112982808"]},{"raw_affiliation_string":"Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia","institution_ids":["https://openalex.org/I139322472"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":4.2866,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.93946309,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"58","issue":"1","first_page":"122","last_page":"131"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.725600004196167,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.725600004196167,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.24150000512599945,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.006300000008195639,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.8550000190734863},{"id":"https://openalex.org/keywords/mos-capacitors","display_name":"MOS capacitors","score":0.8679999709129333},{"id":"https://openalex.org/keywords/post-deposition-annealing","display_name":"post-deposition annealing","score":0.9909999966621399},{"id":"https://openalex.org/keywords/oxygen-annealing","display_name":"oxygen annealing","score":0.8320000171661377},{"id":"https://openalex.org/keywords/metal-organic-decomposition","display_name":"metal-organic decomposition","score":0.6980000138282776},{"id":"https://openalex.org/keywords/spin-coated-thin-films","display_name":"spin-coated films","score":0.6460000276565552},{"id":"https://openalex.org/keywords/interface-trap-density","display_name":"interface trap density","score":0.7850000262260437},{"id":"https://openalex.org/keywords/effective-oxide-charge","display_name":"effective oxide charge","score":0.9319999814033508},{"id":"https://openalex.org/keywords/dielectric-breakdown-field","display_name":"dielectric breakdown field","score":0.9330000281333923}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5632083415985107},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48370271921157837},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34951668977737427},{"id":"https://openalex.org/C71240020","wikidata":"https://www.wikidata.org/wiki/Q186011","display_name":"Stereochemistry","level":1,"score":0.33441346883773804},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2413257658481598},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.15086352825164795},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07425281405448914}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ted.2010.2087024","doi":"https://doi.org/10.1109/ted.2010.2087024","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2010.2087024","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":65,"referenced_works":["https://openalex.org/W1612908643","https://openalex.org/W1613844570","https://openalex.org/W1635738866","https://openalex.org/W1968367833","https://openalex.org/W1969821923","https://openalex.org/W1970025391","https://openalex.org/W1974089334","https://openalex.org/W1978221763","https://openalex.org/W1981966175","https://openalex.org/W1986136439","https://openalex.org/W1987708296","https://openalex.org/W1987989774","https://openalex.org/W1995076186","https://openalex.org/W1996507235","https://openalex.org/W1996785108","https://openalex.org/W1997848364","https://openalex.org/W1998592397","https://openalex.org/W2002891299","https://openalex.org/W2003645630","https://openalex.org/W2005127621","https://openalex.org/W2005746656","https://openalex.org/W2008097268","https://openalex.org/W2008197476","https://openalex.org/W2010712018","https://openalex.org/W2012455562","https://openalex.org/W2016209635","https://openalex.org/W2016397632","https://openalex.org/W2016944733","https://openalex.org/W2021568603","https://openalex.org/W2024240835","https://openalex.org/W2026762360","https://openalex.org/W2027942953","https://openalex.org/W2029157195","https://openalex.org/W2030559666","https://openalex.org/W2033632571","https://openalex.org/W2035352094","https://openalex.org/W2037019032","https://openalex.org/W2041241010","https://openalex.org/W2041734665","https://openalex.org/W2045079615","https://openalex.org/W2050002217","https://openalex.org/W2050034804","https://openalex.org/W2053157205","https://openalex.org/W2063678457","https://openalex.org/W2064850590","https://openalex.org/W2067257276","https://openalex.org/W2067455090","https://openalex.org/W2071100105","https://openalex.org/W2075592076","https://openalex.org/W2077714826","https://openalex.org/W2077835762","https://openalex.org/W2086103622","https://openalex.org/W2092075744","https://openalex.org/W2095226008","https://openalex.org/W2097023036","https://openalex.org/W2106954156","https://openalex.org/W2122953738","https://openalex.org/W2130028915","https://openalex.org/W2135482189","https://openalex.org/W2137396733","https://openalex.org/W2144127443","https://openalex.org/W2146879409","https://openalex.org/W2159755958","https://openalex.org/W2201645582","https://openalex.org/W2325726964"],"related_works":["https://openalex.org/W1965094169","https://openalex.org/W2018328424","https://openalex.org/W1992919603","https://openalex.org/W2084156990","https://openalex.org/W2010712018","https://openalex.org/W2033632571","https://openalex.org/W4309474005","https://openalex.org/W2619142275","https://openalex.org/W2020920632","https://openalex.org/W2050711826"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,18,55,72,78,85,89,104,108,124,133],"effects":[4],"of":[5,34,57,64,68,75,88,107],"postdeposition":[6],"annealing":[7],"temperatures":[8],"(400,":[9],"600,":[10],"800,":[11],"and":[12,32,47,60,132],"1000\u00b0C)":[13],"in":[14],"oxygen":[15,91],"ambient":[16],"on":[17,24],"metal-organic":[19],"decomposed":[20,95],"CeO2films":[21],"spin":[22],"coated":[23],"an":[25,48,61],"n-type":[26],"GaN":[27],"substrate.":[28],"The":[29,66],"compositions,":[30],"structures,":[31],"morphologies":[33],"these":[35],"samples":[36],"are":[37,100],"revealed":[38],"by":[39],"X-ray":[40],"diffraction":[41],"(XRD),":[42],"field-emission":[43],"scanning":[44],"electron":[45],"microscopy,":[46],"atomic":[49],"force":[50],"microscope.":[51],"XRD":[52],"analysis":[53],"discloses":[54],"presence":[56],"CeO2films,":[58],"\u03b1-Ce2O3,":[59],"interfacial":[62],"layer":[63,80],"\u03b2-Ga2O3.":[65],"formation":[67],"\u03b1-Ce2O3is":[69],"due":[70,83],"to":[71,84],"phase":[73],"transformation":[74],"CeO2,":[76],"whereas":[77],"\u03b2-Ga2O3interfacial":[79],"is":[81],"formed":[82],"inward":[86],"diffusion":[87],"released":[90],"from":[92],"CeO2reacting":[93],"with":[94,103],"GaN.":[96],"These":[97],"characterization":[98],"results":[99],"then":[101],"correlated":[102],"metal-oxide-semiconductor":[105],"characteristics":[106],"CeO2gate":[109],"annealed":[110,120],"at":[111,121],"different":[112],"temperatures.":[113],"It":[114],"has":[115],"been":[116],"demonstrated":[117],"that":[118],"oxide":[119,130],"1000\u00b0C":[122],"shows":[123],"lowest":[125],"semiconductor-oxide":[126],"interface-trap":[127],"density,":[128],"effective":[129],"charge,":[131],"highest":[134],"dielectric":[135],"breakdown":[136],"field.":[137]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":6}],"updated_date":"2026-09-26T08:19:03.415552","created_date":"2016-06-24T00:00:00"}