{"id":"https://openalex.org/W2017526693","doi":"https://doi.org/10.1016/0169-4332(91)90283-p","title":"Characterization of a self-aligned RTP titanium disilicide MOS process: titanium-silicon dioxide interaction","display_name":"Characterization of a self-aligned RTP titanium disilicide MOS process: titanium-silicon dioxide interaction","publication_year":1991,"publication_date":"1991-11-01","ids":{"openalex":"https://openalex.org/W2017526693","doi":"https://doi.org/10.1016/0169-4332(91)90283-p","mag":"2017526693"},"language":"en","primary_location":{"id":"doi:10.1016/0169-4332(91)90283-p","doi":"https://doi.org/10.1016/0169-4332(91)90283-p","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0169-4332(91)90283-p","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029104270","display_name":"Wlodek Kaplan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"W. Kaplan","raw_affiliation_strings":["Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018025509","display_name":"Shi\u2010Li Zhang","orcid":"https://orcid.org/0000-0003-2417-274X","observed_orcids":["https://orcid.org/0000-0003-2417-274X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S.-L. Zhang","raw_affiliation_strings":["Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054151329","display_name":"Hans Norstr\u00f6m","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"H. Norstr\u00f6m","raw_affiliation_strings":["Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059858621","display_name":"Mikael \u00d6stling","orcid":"https://orcid.org/0000-0002-5845-3032","observed_orcids":["https://orcid.org/0000-0002-5845-3032"]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"M. \u00d6stling","raw_affiliation_strings":["Department of Solid State Electronics, The Royal Institute of Technology, P.O. Box 1298, S-164 28 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Solid State Electronics, The Royal Institute of Technology, P.O. Box 1298, S-164 28 Kista, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035744068","display_name":"Ann E. Lindberg","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Lindberg","raw_affiliation_strings":["Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista, Sweden","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3930,"currency":"USD","value_usd":3930},"apc_paid":null,"fwci":0.585,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.56005686,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"53","issue":null,"first_page":"338","last_page":"344"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8227999806404114,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8227999806404114,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.16519999504089355,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.00570000009611249,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/titanium-disilicide","display_name":"titanium disilicide","score":0.9629999995231628},{"id":"https://openalex.org/keywords/rapid-thermal-annealing","display_name":"rapid thermal annealing","score":0.8130000233650208},{"id":"https://openalex.org/keywords/titanium-thin-films","display_name":"titanium thin films","score":0.4860000014305115},{"id":"https://openalex.org/keywords/sputter-deposition","display_name":"sputter deposition","score":0.7049999833106995},{"id":"https://openalex.org/keywords/annealing-atmosphere","display_name":"annealing atmosphere","score":0.6710000038146973},{"id":"https://openalex.org/keywords/silicon-dioxide-reduction","display_name":"silicon dioxide reduction","score":0.5899999737739563},{"id":"https://openalex.org/keywords/wet-etching","display_name":"wet etching","score":0.7379999756813049},{"id":"https://openalex.org/keywords/metal-oxide-semiconductor-devices","display_name":"MOS devices","score":0.652999997138977}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8332626819610596},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7798364162445068},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6961437463760376},{"id":"https://openalex.org/C506065880","wikidata":"https://www.wikidata.org/wiki/Q716","display_name":"Titanium","level":2,"score":0.6121679544448853},{"id":"https://openalex.org/C2777593239","wikidata":"https://www.wikidata.org/wiki/Q193521","display_name":"Titanium dioxide","level":2,"score":0.5706849098205566},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.5609115958213806},{"id":"https://openalex.org/C72832162","wikidata":"https://www.wikidata.org/wiki/Q2131545","display_name":"Rapid thermal processing","level":3,"score":0.4287444055080414},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.41795989871025085},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.3808977007865906},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3750821650028229},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.3440210819244385},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.3112970292568207},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.24488359689712524},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.07819002866744995},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0169-4332(91)90283-p","doi":"https://doi.org/10.1016/0169-4332(91)90283-p","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0169-4332(91)90283-p","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1986655021","https://openalex.org/W1989605519","https://openalex.org/W2021788585","https://openalex.org/W2040640734","https://openalex.org/W2063570087","https://openalex.org/W2086725378","https://openalex.org/W2092304557","https://openalex.org/W2147631772","https://openalex.org/W2149228574"],"related_works":["https://openalex.org/W2161035912","https://openalex.org/W2131619219","https://openalex.org/W2323878350","https://openalex.org/W2921237949","https://openalex.org/W2019434563","https://openalex.org/W2179420398","https://openalex.org/W2110577811","https://openalex.org/W2013782557","https://openalex.org/W2021362181","https://openalex.org/W3143292927"],"abstract_inverted_index":null,"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}