{"id":"https://openalex.org/W2017508717","doi":"https://doi.org/10.1016/j.surfcoat.2013.04.021","title":"Density improvement of silicon nanocrystals embedded in silicon carbide matrix deposited by hot-wire CVD","display_name":"Density improvement of silicon nanocrystals embedded in silicon carbide matrix deposited by hot-wire CVD","publication_year":2013,"publication_date":"2013-04-18","ids":{"openalex":"https://openalex.org/W2017508717","doi":"https://doi.org/10.1016/j.surfcoat.2013.04.021","mag":"2017508717"},"language":"en","primary_location":{"id":"doi:10.1016/j.surfcoat.2013.04.021","doi":"https://doi.org/10.1016/j.surfcoat.2013.04.021","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.surfcoat.2013.04.021","pdf_url":"https://www.sciencedirect.com/science/article/pii/S0257897213003538/pdf","source":{"id":"https://openalex.org/S76010543","display_name":"Surface and Coatings Technology","issn_l":"0257-8972","issn":["0257-8972","1879-3347"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface and Coatings Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://www.sciencedirect.com/science/article/pii/S0257897213003538/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Kaifeng Bi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kaifeng Bi","raw_affiliation_strings":["School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100649506","display_name":"Yanhong Liu","orcid":"https://orcid.org/0000-0003-4407-483X","observed_orcids":["https://orcid.org/0000-0003-4407-483X"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yanhong Liu","raw_affiliation_strings":["School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100398813","display_name":"Kun Liu","orcid":"https://orcid.org/0000-0003-3739-3234","observed_orcids":["https://orcid.org/0000-0003-3739-3234","https://orcid.org/0000-0002-7164-5434"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kun Liu","raw_affiliation_strings":["School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108623092","display_name":"Jiwen Jiang","orcid":"https://orcid.org/0009-0002-8447-0116","observed_orcids":["https://orcid.org/0009-0002-8447-0116"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiwen Jiang","raw_affiliation_strings":["School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China","institution_ids":["https://openalex.org/I27357992"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5070853442","display_name":"Wei Bing Peng","orcid":"https://orcid.org/0000-0002-0246-0698","observed_orcids":["https://orcid.org/0000-0002-0246-0698"]},"institutions":[{"id":"https://openalex.org/I27357992","display_name":"Dalian University of Technology","ror":"https://ror.org/023hj5876","country_code":"CN","type":"education","lineage":["https://openalex.org/I27357992"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Peng","raw_affiliation_strings":["School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024, People's Republic of China","institution_ids":["https://openalex.org/I27357992"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5100649506"],"corresponding_institution_ids":["https://openalex.org/I27357992"],"apc_list":{"value":3880,"currency":"USD","value_usd":3880},"apc_paid":{"value":3880,"currency":"USD","value_usd":3880},"fwci":0.8008,"has_fulltext":true,"cited_by_count":7,"citation_normalized_percentile":{"value":0.6643779,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"228","issue":null,"first_page":"148","last_page":"153"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.9467999935150146,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.9467999935150146,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.036400001496076584,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.006000000052154064,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-nanocrystals","display_name":"silicon nanocrystals","score":0.9990000128746033},{"id":"https://openalex.org/keywords/silicon-carbide-matrix","display_name":"silicon carbide matrix","score":0.949999988079071},{"id":"https://openalex.org/keywords/hot-filament-chemical-vapor-deposition","display_name":"hot filament chemical vapor deposition","score":0.8259999752044678},{"id":"https://openalex.org/keywords/nanocrystal-density","display_name":"nanocrystal density","score":0.9150000214576721},{"id":"https://openalex.org/keywords/nucleation","display_name":"nucleation","score":0.6769999861717224},{"id":"https://openalex.org/keywords/grain-size","display_name":"grain size","score":0.6420000195503235},{"id":"https://openalex.org/keywords/working-gas-pressure","display_name":"working gas pressure","score":0.968999981880188},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.4350000023841858}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8760125637054443},{"id":"https://openalex.org/C61048295","wikidata":"https://www.wikidata.org/wiki/Q909022","display_name":"Nucleation","level":2,"score":0.7056513428688049},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.6264833211898804},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6176134943962097},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5842046737670898},{"id":"https://openalex.org/C2778024649","wikidata":"https://www.wikidata.org/wiki/Q410572","display_name":"Silane","level":2,"score":0.5837172269821167},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5069713592529297},{"id":"https://openalex.org/C175854130","wikidata":"https://www.wikidata.org/wiki/Q98276914","display_name":"Nanocrystal","level":2,"score":0.5034984946250916},{"id":"https://openalex.org/C160892712","wikidata":"https://www.wikidata.org/wiki/Q901559","display_name":"Fourier transform infrared spectroscopy","level":2,"score":0.49947094917297363},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.49727991223335266},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.4507014751434326},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.41327527165412903},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.39964187145233154},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.28333133459091187},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.23933324217796326},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.16637614369392395},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.10839530825614929},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.056483447551727295},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.surfcoat.2013.04.021","doi":"https://doi.org/10.1016/j.surfcoat.2013.04.021","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.surfcoat.2013.04.021","pdf_url":"https://www.sciencedirect.com/science/article/pii/S0257897213003538/pdf","source":{"id":"https://openalex.org/S76010543","display_name":"Surface and Coatings Technology","issn_l":"0257-8972","issn":["0257-8972","1879-3347"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface and Coatings Technology","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1016/j.surfcoat.2013.04.021","doi":"https://doi.org/10.1016/j.surfcoat.2013.04.021","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.surfcoat.2013.04.021","pdf_url":"https://www.sciencedirect.com/science/article/pii/S0257897213003538/pdf","source":{"id":"https://openalex.org/S76010543","display_name":"Surface and Coatings Technology","issn_l":"0257-8972","issn":["0257-8972","1879-3347"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface and Coatings Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2935832887","display_name":null,"funder_award_id":"60977055","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5095825382","display_name":"\u9ad8\u7075\u654f\u5ea6\u8868\u9762\u7b49\u79bb\u5b50\u6fc0\u5143\u5171\u632f\u5149\u7ea4\u751f\u7269\u5316\u5b66\u4f20\u611f\u5173\u952e\u6280\u672f\u7814\u7a76","funder_award_id":"61137005","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2017508717.pdf","grobid_xml":"https://content.openalex.org/works/W2017508717.grobid-xml"},"referenced_works_count":29,"referenced_works":["https://openalex.org/W1535953875","https://openalex.org/W1554422089","https://openalex.org/W1556497178","https://openalex.org/W1564662655","https://openalex.org/W1616132382","https://openalex.org/W1653375885","https://openalex.org/W1669196377","https://openalex.org/W1980067373","https://openalex.org/W1992070913","https://openalex.org/W1992358646","https://openalex.org/W1995617762","https://openalex.org/W1996466565","https://openalex.org/W2006525934","https://openalex.org/W2014779783","https://openalex.org/W2026026545","https://openalex.org/W2034589797","https://openalex.org/W2047754451","https://openalex.org/W2048241602","https://openalex.org/W2048641351","https://openalex.org/W2050468951","https://openalex.org/W2059403731","https://openalex.org/W2061415764","https://openalex.org/W2063799651","https://openalex.org/W2065258689","https://openalex.org/W2066600857","https://openalex.org/W2070606589","https://openalex.org/W2119435971","https://openalex.org/W2169932536","https://openalex.org/W2172085372"],"related_works":["https://openalex.org/W4391445958","https://openalex.org/W2088980967","https://openalex.org/W2122288207","https://openalex.org/W2032849124","https://openalex.org/W1561572060","https://openalex.org/W2039225052","https://openalex.org/W1964967043","https://openalex.org/W2016190172","https://openalex.org/W1974869206","https://openalex.org/W3021549463"],"abstract_inverted_index":{"The":[0,113],"thin":[1],"films":[2],"of":[3,40,54,66,74,110,128,134,150,154,165],"silicon":[4,9],"nanocrystals":[5],"(Si-NC)":[6],"embedded":[7,167],"in":[8,168],"carbide":[10],"(SiC)":[11],"matrix":[12,170],"(Si-NC:SiC)":[13],"were":[14],"developed":[15],"by":[16,32,68,172],"using":[17],"hot-wire":[18],"chemical":[19],"vapor":[20],"deposition":[21],"(HWCVD)":[22],"from":[23,44],"silane":[24],"(SiH4)":[25],"and":[26,42,78,92,107,152],"methane":[27],"(CH4)":[28],"mixture":[29],"gases":[30],"diluted":[31],"hydrogen":[33],"(H2).":[34],"This":[35,156],"method":[36,157],"avoids":[37],"the":[38,51,60,64,100,119,132,141,148,163],"co-precipitation":[39],"Si-NCs":[41,67,166],"SiC-NCs":[43],"a":[45],"high-temperature":[46,175],"annealing":[47,176],"process.":[48,177],"According":[49],"to":[50,62,76,125,136,161],"classical":[52],"theory":[53],"nucleation,":[55],"this":[56],"paper":[57],"experimentally":[58],"investigates":[59],"possibilities":[61],"increase":[63,140],"density":[65,127,164],"optimizing":[69],"two":[70],"processing":[71],"parameters":[72],"(ratio":[73],"SiH4":[75,135],"CH4":[77,137],"working":[79,120],"gas":[80,121],"pressure).":[81],"Using":[82],"Raman":[83],"spectroscopy,":[84],"X-ray":[85],"diffraction":[86],"(XRD),":[87],"scanning":[88],"electron":[89],"microscopy":[90],"(SEM)":[91],"Fourier":[93],"transform":[94],"infra-red":[95],"spectroscopy":[96],"(FTIR),":[97],"we":[98],"characterized":[99],"grain":[101,142],"size,":[102,143],"crystal":[103],"volume":[104],"fraction,":[105],"topography":[106],"bond":[108],"configurations":[109],"as-deposited":[111],"films.":[112],"experimental":[114],"results":[115],"demonstrate":[116],"that":[117],"increasing":[118,131],"pressure":[122],"can":[123,138,158],"lead":[124],"higher":[126],"Si-NCs,":[129],"while":[130],"ratio":[133],"only":[139],"which":[144],"is":[145],"consistent":[146],"with":[147],"mechanism":[149],"nucleation":[151],"growth":[153],"Si-NCs.":[155],"be":[159],"used":[160],"improve":[162],"SiC":[169],"deposited":[171],"CVD":[173],"without":[174]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}