{"id":"https://openalex.org/W2017387670","doi":"https://doi.org/10.1143/jjap.19.l353","title":"Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition","display_name":"Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition","publication_year":1980,"publication_date":"1980-07-01","ids":{"openalex":"https://openalex.org/W2017387670","doi":"https://doi.org/10.1143/jjap.19.l353","mag":"2017387670"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.19.l353","doi":"https://doi.org/10.1143/jjap.19.l353","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.19.l353","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100842964","display_name":"Shigehiro Nishino","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shigehiro Nishino","raw_affiliation_strings":["Department of Electronics, Faculty of Engineering, Kyoto University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, Faculty of Engineering, Kyoto University","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087713175","display_name":"A. Ibaraki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akira Ibaraki","raw_affiliation_strings":["Department of Electronics, Faculty of Engineering, Kyoto University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, Faculty of Engineering, Kyoto University","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108412638","display_name":"Hiroyuki Matsunami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroyuki Matsunami","raw_affiliation_strings":["Department of Electronics, Faculty of Engineering, Kyoto University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, Faculty of Engineering, Kyoto University","institution_ids":["https://openalex.org/I22299242"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068200298","display_name":"Tetsuro Tanaka","orcid":"https://orcid.org/0000-0002-8515-6973","observed_orcids":["https://orcid.org/0000-0002-8515-6973"]},"institutions":[{"id":"https://openalex.org/I22299242","display_name":"Kyoto University","ror":"https://ror.org/02kpeqv85","country_code":"JP","type":"education","lineage":["https://openalex.org/I22299242"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tetsuro Tanaka","raw_affiliation_strings":["Department of Electronics, Faculty of Engineering, Kyoto University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, Faculty of Engineering, Kyoto University","institution_ids":["https://openalex.org/I22299242"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I22299242"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":1.7046,"has_fulltext":false,"cited_by_count":41,"citation_normalized_percentile":{"value":0.83245625,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"19","issue":"7","first_page":"L353","last_page":"L353"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.02070000022649765,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/6h-sic","display_name":"6H-SiC","score":0.8759999871253967},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"silicon carbide","score":0.7329999804496765},{"id":"https://openalex.org/keywords/blue-leds","display_name":"blue LEDs","score":0.8579999804496765},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"chemical vapor deposition","score":0.7990000247955322},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.9909999966621399},{"id":"https://openalex.org/keywords/nitrogen-doping","display_name":"nitrogen doping","score":0.8560000061988831},{"id":"https://openalex.org/keywords/aluminum-doping","display_name":"aluminum doping","score":0.9800000190734863},{"id":"https://openalex.org/keywords/p-n-junction","display_name":"p-n junction","score":0.8259999752044678},{"id":"https://openalex.org/keywords/electroluminescence","display_name":"electroluminescence","score":0.9010000228881836},{"id":"https://openalex.org/keywords/external-quantum-efficiency","display_name":"external quantum efficiency","score":0.9259999990463257}],"concepts":[{"id":"https://openalex.org/C31625292","wikidata":"https://www.wikidata.org/wiki/Q215803","display_name":"Electroluminescence","level":3,"score":0.846554160118103},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.8253205418586731},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.7331175804138184},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6316757202148438},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6018970608711243},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.600472092628479},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.589493453502655},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5259956121444702},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5252275466918945},{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.49006330966949463},{"id":"https://openalex.org/C205507967","wikidata":"https://www.wikidata.org/wiki/Q900625","display_name":"Quantum efficiency","level":2,"score":0.44454923272132874},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.39517226815223694},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.24917450547218323},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16810369491577148},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06071588397026062},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.19.l353","doi":"https://doi.org/10.1143/jjap.19.l353","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.19.l353","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1981368278","https://openalex.org/W1989668247","https://openalex.org/W2001429041","https://openalex.org/W2014259786","https://openalex.org/W2024055348","https://openalex.org/W2052740745","https://openalex.org/W2066503294","https://openalex.org/W2092173241"],"related_works":["https://openalex.org/W2066503294","https://openalex.org/W1994901167","https://openalex.org/W2001429041","https://openalex.org/W2158072139","https://openalex.org/W2171557998","https://openalex.org/W2074785642","https://openalex.org/W1989668247","https://openalex.org/W3047439660","https://openalex.org/W2018886441","https://openalex.org/W2323761176"],"abstract_inverted_index":{"Silicon":[0],"carbide":[1],"(SiC)":[2],"blue-light-emitting":[3],"diodes":[4],"with":[5,47],"an":[6],"external":[7],"quantum":[8],"efficiency":[9],"of":[10,23,41,80],"2\u00d710-5":[11],"photons/electron":[12],"were":[13,51],"prepared":[14,67],"by":[15,53,72],"the":[16,36,42,81],"chemical":[17],"vapor":[18],"deposition":[19],"method.":[20],"Epitaxial":[21,39],"growth":[22,70],"6H-SiC":[24,33],"has":[25],"been":[26],"carried":[27],"out":[28],"at":[29],"1800\u00b0C":[30],"on":[31],"a":[32,73],"substrate":[34],"using":[35],"SiCl4-C3H8-H2":[37],"system.":[38],"layers":[40],"n":[43],"and":[44,58],"p":[45],"types":[46],"appropriate":[48],"carrier":[49],"concentrations":[50],"obtained":[52],"doping":[54],"N":[55],"from":[56,60],"NH3":[57],"Al":[59],"AlCl3,":[61],"respectively.":[62],"A":[63],"pn":[64],"junction":[65],"was":[66,84],"in":[68],"one":[69],"run":[71],"double":[74],"epitaxial":[75],"process.":[76],"The":[77],"peak":[78],"wavelength":[79],"electroluminescence":[82],"spectrum":[83],"495":[85],"nm.":[86]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2026-10-08T09:06:37.294493","created_date":"2016-06-24T00:00:00"}