{"id":"https://openalex.org/W2017334979","doi":"https://doi.org/10.1063/1.2149292","title":"Characterization of nanoporous Si thin films obtained by Al\u2013Si phase separation","display_name":"Characterization of nanoporous Si thin films obtained by Al\u2013Si phase separation","publication_year":2005,"publication_date":"2005-12-15","ids":{"openalex":"https://openalex.org/W2017334979","doi":"https://doi.org/10.1063/1.2149292","mag":"2017334979"},"language":"en","primary_location":{"id":"doi:10.1063/1.2149292","doi":"https://doi.org/10.1063/1.2149292","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2149292","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113557367","display_name":"Kazuhiko Fukutani","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1320697193","display_name":"Canon (Japan)","ror":"https://ror.org/05gg0gh87","country_code":"JP","type":"company","lineage":["https://openalex.org/I1320697193"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuhiko Fukutani","raw_affiliation_strings":["Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan","institution_ids":["https://openalex.org/I1320697193"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051417270","display_name":"Youhei Ishida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1320697193","display_name":"Canon (Japan)","ror":"https://ror.org/05gg0gh87","country_code":"JP","type":"company","lineage":["https://openalex.org/I1320697193"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Youhei Ishida","raw_affiliation_strings":["Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan","institution_ids":["https://openalex.org/I1320697193"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109524499","display_name":"Toshiaki Aiba","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1320697193","display_name":"Canon (Japan)","ror":"https://ror.org/05gg0gh87","country_code":"JP","type":"company","lineage":["https://openalex.org/I1320697193"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiaki Aiba","raw_affiliation_strings":["Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan","institution_ids":["https://openalex.org/I1320697193"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103013189","display_name":"Hirokatsu Miyata","orcid":"https://orcid.org/0000-0003-4717-2654","observed_orcids":["https://orcid.org/0000-0003-4717-2654"]},"institutions":[{"id":"https://openalex.org/I1320697193","display_name":"Canon (Japan)","ror":"https://ror.org/05gg0gh87","country_code":"JP","type":"company","lineage":["https://openalex.org/I1320697193"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirokatsu Miyata","raw_affiliation_strings":["Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan","institution_ids":["https://openalex.org/I1320697193"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113648346","display_name":"Tohru Den","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1320697193","display_name":"Canon (Japan)","ror":"https://ror.org/05gg0gh87","country_code":"JP","type":"company","lineage":["https://openalex.org/I1320697193"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tohru Den","raw_affiliation_strings":["Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Canon Inc. Leading-Edge Technology Development Headquarters, , 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan","institution_ids":["https://openalex.org/I1320697193"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1320697193"],"apc_list":null,"apc_paid":null,"fwci":0.5477,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.61605008,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"87","issue":"25","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13463","display_name":"Nanoporous metals and alloys","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanoporous-silicon","display_name":"nanoporous silicon","score":0.9800000190734863},{"id":"https://openalex.org/keywords/sputtered-thin-films","display_name":"sputtered thin films","score":0.7429999709129333},{"id":"https://openalex.org/keywords/sulfuric-acid-etching","display_name":"sulfuric acid etching","score":0.9470000267028809},{"id":"https://openalex.org/keywords/amorphous-silicon","display_name":"amorphous silicon","score":0.8989999890327454},{"id":"https://openalex.org/keywords/cylindrical-pores","display_name":"cylindrical pores","score":0.7059999704360962},{"id":"https://openalex.org/keywords/pore-density","display_name":"pore density","score":0.8190000057220459},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.8429999947547913},{"id":"https://openalex.org/keywords/hydrogen-atmosphere","display_name":"hydrogen atmosphere","score":0.5559999942779541},{"id":"https://openalex.org/keywords/p-type-semiconductors","display_name":"p-type semiconductors","score":0.8569999933242798},{"id":"https://openalex.org/keywords/electrical-properties","display_name":"electrical properties","score":0.8730000257492065}],"concepts":[{"id":"https://openalex.org/C48940184","wikidata":"https://www.wikidata.org/wiki/Q17623309","display_name":"Nanoporous","level":2,"score":0.9223728179931641},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8440120220184326},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6816824674606323},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6479398608207703},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.5916605591773987},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5729351043701172},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.5536500215530396},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5006208419799805},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.4641159176826477},{"id":"https://openalex.org/C6648577","wikidata":"https://www.wikidata.org/wiki/Q622669","display_name":"Porosity","level":2,"score":0.45030179619789124},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4263153076171875},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.421791136264801},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.4138745665550232},{"id":"https://openalex.org/C2776685891","wikidata":"https://www.wikidata.org/wiki/Q428660","display_name":"Porous silicon","level":3,"score":0.41312935948371887},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37575972080230713},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.25492846965789795},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.24031639099121094},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.14865845441818237},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.10104113817214966},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.06796824932098389},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2149292","doi":"https://doi.org/10.1063/1.2149292","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2149292","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1965325929","https://openalex.org/W2006346404","https://openalex.org/W2020136611","https://openalex.org/W2021336145","https://openalex.org/W2024455405","https://openalex.org/W2066600857","https://openalex.org/W2082013831","https://openalex.org/W2092321474","https://openalex.org/W2095729305","https://openalex.org/W2118690127","https://openalex.org/W2155418516","https://openalex.org/W2162882294","https://openalex.org/W2479113758"],"related_works":["https://openalex.org/W2076412405","https://openalex.org/W2333089719","https://openalex.org/W2143577016","https://openalex.org/W1996391249","https://openalex.org/W2011592882","https://openalex.org/W2132571357","https://openalex.org/W2381543807","https://openalex.org/W2093741599","https://openalex.org/W1658269056","https://openalex.org/W2793217893"],"abstract_inverted_index":{"Nanoporous":[0],"silicon":[1,44],"films":[2,38,58],"of":[3,22,42,77,92],"ultrahigh":[4],"pore":[5,52],"densities":[6],"and":[7,19,45],"large":[8],"surface":[9],"areas":[10],"have":[11,46],"been":[12],"fabricated":[13],"by":[14,28,62],"sputtering":[15],"an":[16,50],"Al\u2013Si":[17],"target":[18],"subsequent":[20],"removal":[21],"the":[23,78],"deposited":[24],"film\u2019s":[25],"Al":[26],"regions":[27],"etching":[29],"in":[30,65],"a":[31,66],"sulfuric":[32],"acid":[33],"solution.":[34],"The":[35,74],"resulting":[36],"nanoporous":[37,57,80],"are":[39,87],"mainly":[40],"composed":[41],"amorphous":[43],"cylindrical":[47],"pores":[48],"with":[49],"average":[51],"density":[53],"exceeding":[54],"1016pores\u2215m2.":[55],"These":[56],"can":[59],"be":[60],"crystallized":[61,79],"thermal":[63],"annealing":[64],"H2":[67],"atmosphere":[68],"to":[69,90],"improve":[70],"their":[71],"electrical":[72,75],"properties.":[73],"properties":[76],"films,":[81],"which":[82],"behave":[83],"as":[84],"p-type":[85],"semiconductors,":[86],"very":[88],"similar":[89],"those":[91],"electrochemically":[93],"etched":[94],"porous":[95],"Si.":[96]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-09-27T08:07:27.782135","created_date":"2016-06-24T00:00:00"}