{"id":"https://openalex.org/W2017288211","doi":"https://doi.org/10.1016/0038-1101(74)90025-2","title":"The diffuse scattering model of effective mobility in the strongly inverted layer of MOS transistors","display_name":"The diffuse scattering model of effective mobility in the strongly inverted layer of MOS transistors","publication_year":1974,"publication_date":"1974-08-01","ids":{"openalex":"https://openalex.org/W2017288211","doi":"https://doi.org/10.1016/0038-1101(74)90025-2","mag":"2017288211"},"language":"en","primary_location":{"id":"doi:10.1016/0038-1101(74)90025-2","doi":"https://doi.org/10.1016/0038-1101(74)90025-2","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0038-1101(74)90025-2","pdf_url":null,"source":{"id":"https://openalex.org/S77418581","display_name":"Solid-State Electronics","issn_l":"0038-1101","issn":["0038-1101","1879-2405"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid-State Electronics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027361765","display_name":"Giorgio Baccarani","orcid":"https://orcid.org/0000-0001-7365-5495","observed_orcids":["https://orcid.org/0000-0001-7365-5495"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G. Baccarani","raw_affiliation_strings":["C.N.R.-Lamel, Via Castagnoli, 1, 40126 Bologna, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"C.N.R.-Lamel, Via Castagnoli, 1, 40126 Bologna, Italy","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088481221","display_name":"A. M. Mazzone","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A.M. Mazzone","raw_affiliation_strings":["C.N.R.-Lamel, Via Castagnoli, 1, 40126 Bologna, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"C.N.R.-Lamel, Via Castagnoli, 1, 40126 Bologna, Italy","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109847406","display_name":"Carlo Morandi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Morandi","raw_affiliation_strings":["C.N.R.-Lamel, Via Castagnoli, 1, 40126 Bologna, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"C.N.R.-Lamel, Via Castagnoli, 1, 40126 Bologna, Italy","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2410,"currency":"USD","value_usd":2410},"apc_paid":null,"fwci":2.2541,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.86036226,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"17","issue":"8","first_page":"785","last_page":"789"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9404000043869019,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9404000043869019,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.04659999907016754,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.00419999985024333,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/effective-mobility","display_name":"effective mobility","score":0.6959999799728394},{"id":"https://openalex.org/keywords/mos-transistors","display_name":"MOS transistors","score":0.7620000243186951},{"id":"https://openalex.org/keywords/inversion-layer","display_name":"inversion layer","score":0.9629999995231628},{"id":"https://openalex.org/keywords/surface-conduction","display_name":"surface conduction","score":0.9150000214576721},{"id":"https://openalex.org/keywords/high-field-mobility","display_name":"high-field mobility","score":0.6919999718666077},{"id":"https://openalex.org/keywords/relaxation-time","display_name":"relaxation time","score":0.5379999876022339}],"concepts":[{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6379092931747437},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.6265803575515747},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.560580849647522},{"id":"https://openalex.org/C2777727622","wikidata":"https://www.wikidata.org/wiki/Q5251772","display_name":"Degeneracy (biology)","level":2,"score":0.5287591814994812},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5177487730979919},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4554746150970459},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4455316662788391},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4329037070274353},{"id":"https://openalex.org/C132882038","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"Induced high electron mobility transistor","level":5,"score":0.42321473360061646},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36277341842651367},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.32665306329727173},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.1831701397895813},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C60644358","wikidata":"https://www.wikidata.org/wiki/Q128570","display_name":"Bioinformatics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0038-1101(74)90025-2","doi":"https://doi.org/10.1016/0038-1101(74)90025-2","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0038-1101(74)90025-2","pdf_url":null,"source":{"id":"https://openalex.org/S77418581","display_name":"Solid-State Electronics","issn_l":"0038-1101","issn":["0038-1101","1879-2405"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Solid-State Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2018537930","https://openalex.org/W1999142501","https://openalex.org/W2545323432","https://openalex.org/W2001551336","https://openalex.org/W1634648165","https://openalex.org/W2138618774","https://openalex.org/W2134432234","https://openalex.org/W2009827218","https://openalex.org/W2005416310","https://openalex.org/W2057159828"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2016-06-24T00:00:00"}