{"id":"https://openalex.org/W2017108339","doi":"https://doi.org/10.1063/1.4867233","title":"Effect of Hf incorporation in solution-processed NiOx based resistive random access memory","display_name":"Effect of Hf incorporation in solution-processed NiOx based resistive random access memory","publication_year":2014,"publication_date":"2014-03-03","ids":{"openalex":"https://openalex.org/W2017108339","doi":"https://doi.org/10.1063/1.4867233","mag":"2017108339"},"language":"en","primary_location":{"id":"doi:10.1063/1.4867233","doi":"https://doi.org/10.1063/1.4867233","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4867233","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103516988","display_name":"Doo Hyun Yoon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Doo Hyun Yoon","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017556481","display_name":"Si Joon Kim","orcid":"https://orcid.org/0000-0001-9191-9079","observed_orcids":["https://orcid.org/0000-0001-9191-9079"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Si Joon Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089089355","display_name":"Joohye Jung","orcid":"https://orcid.org/0000-0002-6437-7734","observed_orcids":["https://orcid.org/0000-0002-6437-7734"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joohye Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110027946","display_name":"Seung Jin Heo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung Jin Heo","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011866664","display_name":"Hyun Jae Kim","orcid":"https://orcid.org/0000-0002-6879-9256","observed_orcids":["https://orcid.org/0000-0002-6879-9256","https://orcid.org/0000-0001-9191-9079","https://orcid.org/0000-0002-6727-014X"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun Jae Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul 120-749, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":null,"apc_paid":null,"fwci":1.0352,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.78708811,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"104","issue":"9","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"resistive random access memory","score":0.9879999756813049},{"id":"https://openalex.org/keywords/nickel-oxide","display_name":"nickel oxide","score":0.8410000205039978},{"id":"https://openalex.org/keywords/hafnium-doping","display_name":"hafnium doping","score":0.9509999752044678},{"id":"https://openalex.org/keywords/transition-metal-oxides","display_name":"transition metal oxides","score":0.5540000200271606},{"id":"https://openalex.org/keywords/unipolar-resistive-switching","display_name":"unipolar resistive switching","score":0.8960000276565552},{"id":"https://openalex.org/keywords/bipolar-resistive-switching","display_name":"bipolar resistive switching","score":0.9959999918937683},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.7900000214576721},{"id":"https://openalex.org/keywords/solution-processing","display_name":"solution processing","score":0.7179999947547913},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.6470000147819519},{"id":"https://openalex.org/keywords/breakdown","display_name":"breakdown","score":0.4309999942779541}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7522785067558289},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.6396046280860901},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6357131004333496},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.5726726055145264},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5369012355804443},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4421739876270294},{"id":"https://openalex.org/C101722063","wikidata":"https://www.wikidata.org/wiki/Q218825","display_name":"Random access","level":2,"score":0.4163898825645447},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.410940945148468},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.41065657138824463},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3397585153579712},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.33408623933792114},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.23771899938583374},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.20407113432884216},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1184072196483612},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.10258761048316956},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08229213953018188},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.06998059153556824},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.4867233","doi":"https://doi.org/10.1063/1.4867233","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4867233","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1517925310","https://openalex.org/W1984543924","https://openalex.org/W1985684065","https://openalex.org/W1991920937","https://openalex.org/W1992058428","https://openalex.org/W1996892448","https://openalex.org/W1999603523","https://openalex.org/W2008487350","https://openalex.org/W2013971225","https://openalex.org/W2019744614","https://openalex.org/W2021175508","https://openalex.org/W2028754569","https://openalex.org/W2036899386","https://openalex.org/W2044232790","https://openalex.org/W2045197688","https://openalex.org/W2046369997","https://openalex.org/W2050017442","https://openalex.org/W2058273255","https://openalex.org/W2069906278","https://openalex.org/W2074357625","https://openalex.org/W2075010990","https://openalex.org/W2084111729"],"related_works":["https://openalex.org/W2057008853","https://openalex.org/W2265105779","https://openalex.org/W1987142988","https://openalex.org/W4376484092","https://openalex.org/W3009121416","https://openalex.org/W2041264297","https://openalex.org/W4214504506","https://openalex.org/W2102900407","https://openalex.org/W1994967009","https://openalex.org/W2167091879"],"abstract_inverted_index":{"Resistive":[0],"random":[1],"access":[2],"memory":[3],"based":[4],"on":[5],"transition":[6],"metal":[7],"oxide":[8],"materials":[9],"has":[10],"attracted":[11],"much":[12],"recent":[13],"attention":[14],"for":[15],"the":[16,30,34,81],"development":[17],"of":[18,43,70,76],"next-generation":[19],"non-volatile":[20],"memory.":[21],"The":[22],"Hf:NiOx":[23],"devices":[24],"showed":[25],"driving":[26],"mode":[27],"transformation":[28],"by":[29,66],"Hf":[31,44],"content":[32],"in":[33],"system.":[35,84],"Unipolar":[36],"resistive":[37,49,77],"switching":[38,50,56,78],"was":[39,51,57,64],"observed":[40,52],"at":[41,53,59],"2%":[42],"concentration":[45],"while":[46],"a":[47],"bipolar":[48],"10%.":[54],"Un-stable":[55],"shown":[58],"30%,":[60],"and":[61],"non-stable":[62],"breakdown":[63],"followed":[65],"100%.":[67],"These":[68],"variations":[69],"I\u2013V":[71],"characteristics":[72],"can":[73],"enhance":[74],"understanding":[75],"phenomenon":[79],"under":[80],"material":[82],"incorporated":[83]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3}],"updated_date":"2026-11-03T10:50:19.383937","created_date":"2016-06-24T00:00:00"}