{"id":"https://openalex.org/W2017095465","doi":"https://doi.org/10.1063/1.1400771","title":"Vertical and lateral GaN rectifiers on free-standing GaN substrates","display_name":"Vertical and lateral GaN rectifiers on free-standing GaN substrates","publication_year":2001,"publication_date":"2001-09-03","ids":{"openalex":"https://openalex.org/W2017095465","doi":"https://doi.org/10.1063/1.1400771","mag":"2017095465"},"language":"en","primary_location":{"id":"doi:10.1063/1.1400771","doi":"https://doi.org/10.1063/1.1400771","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1400771","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051534853","display_name":"A.P. Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. P. Zhang","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110884278","display_name":"J. W. Johnson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. W. Johnson","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078326554","display_name":"B. Luo","orcid":"https://orcid.org/0009-0004-7773-4966","observed_orcids":["https://orcid.org/0009-0004-7773-4966"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. Luo","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. Ren","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. J. Pearton","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida\u200932611","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110124778","display_name":"S. S. Park","orcid":"https://orcid.org/0009-0004-3823-853X","observed_orcids":["https://orcid.org/0009-0004-3823-853X"]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":"KR","type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. S. Park","raw_affiliation_strings":["Samsung Advanced Institute of Technology, P.O. Box 111, Suwon\u2009440-600, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology, P.O. Box 111, Suwon\u2009440-600, South Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110371860","display_name":"Y. J. Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4399598381","display_name":"Samsung Advanced Institute of Technology (South Korea)","ror":"https://ror.org/04axnyp10","country_code":"KR","type":"company","lineage":["https://openalex.org/I4399598381"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y. J. Park","raw_affiliation_strings":["Samsung Advanced Institute of Technology, P.O. Box 111, Suwon\u2009440-600, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Advanced Institute of Technology, P.O. Box 111, Suwon\u2009440-600, South Korea","institution_ids":["https://openalex.org/I4399598381"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077671019","display_name":"Jen\u2010Inn Chyi","orcid":"https://orcid.org/0000-0001-8149-832X","observed_orcids":["https://orcid.org/0000-0001-8149-832X"]},"institutions":[{"id":"https://openalex.org/I22265921","display_name":"National Central University","ror":"https://ror.org/00944ve71","country_code":"TW","type":"education","lineage":["https://openalex.org/I22265921"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"J.-I. Chyi","raw_affiliation_strings":["Department of Electrical Engineering, National Central University, Chung-Li\u200932054,\u2009Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Central University, Chung-Li\u200932054,\u2009Taiwan","institution_ids":["https://openalex.org/I22265921"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7649,"has_fulltext":false,"cited_by_count":71,"citation_normalized_percentile":{"value":0.70077886,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"79","issue":"10","first_page":"1555","last_page":"1557"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9814000129699707,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9814000129699707,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.014600000344216824,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0027000000700354576,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-contacts","display_name":"Schottky contacts","score":0.7590000033378601},{"id":"https://openalex.org/keywords/reverse-breakdown-voltage","display_name":"reverse breakdown voltage","score":0.8349999785423279},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.9399999976158142},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"figure of merit","score":0.7630000114440918},{"id":"https://openalex.org/keywords/high-power-rectification","display_name":"high-power rectification","score":0.3490000069141388}],"concepts":[{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.7602434158325195},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.7092955112457275},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6054917573928833},{"id":"https://openalex.org/C50100734","wikidata":"https://www.wikidata.org/wiki/Q7303176","display_name":"Rectifier (neural networks)","level":5,"score":0.5954543948173523},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5435757637023926},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4977996349334717},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49491018056869507},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.473903089761734},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.32643795013427734},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3111637234687805},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.18955376744270325},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14502239227294922},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C147168706","wikidata":"https://www.wikidata.org/wiki/Q1457734","display_name":"Recurrent neural network","level":3,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C86582703","wikidata":"https://www.wikidata.org/wiki/Q7617824","display_name":"Stochastic neural network","level":4,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1400771","doi":"https://doi.org/10.1063/1.1400771","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1400771","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4000000059604645,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1965838823","https://openalex.org/W1981918025","https://openalex.org/W1987745564","https://openalex.org/W1989028728","https://openalex.org/W1996693005","https://openalex.org/W1999452460","https://openalex.org/W2002320631","https://openalex.org/W2013819685","https://openalex.org/W2018420008","https://openalex.org/W2021568603","https://openalex.org/W2021781202","https://openalex.org/W2029837243","https://openalex.org/W2030984585","https://openalex.org/W2034233574","https://openalex.org/W2041884613","https://openalex.org/W2043050147","https://openalex.org/W2049345247","https://openalex.org/W2055103765","https://openalex.org/W2079169236","https://openalex.org/W2086670620","https://openalex.org/W2097049653","https://openalex.org/W2151521007","https://openalex.org/W2161862626","https://openalex.org/W2166183827","https://openalex.org/W2416982242","https://openalex.org/W4206291147"],"related_works":["https://openalex.org/W1996693005","https://openalex.org/W2095442489","https://openalex.org/W1992307287","https://openalex.org/W2138709711","https://openalex.org/W2067578216","https://openalex.org/W2023219007","https://openalex.org/W1965164412","https://openalex.org/W2079169236","https://openalex.org/W4214682980","https://openalex.org/W2165992532"],"abstract_inverted_index":{"Edge-terminated":[0],"Schottky":[1,32],"rectifiers":[2,67],"fabricated":[3],"on":[4,17,21],"quasibulk":[5],"GaN":[6],"substrates":[7],"showed":[8],"a":[9,53,93],"strong":[10],"dependence":[11],"of":[12,48,56,70,74,96,103],"reverse":[13],"breakdown":[14],"voltage":[15,86],"VB":[16,34,69,112],"contact":[18],"dimension":[19],"and":[20,78],"rectifier":[22],"geometry":[23,39],"(lateral":[24],"versus":[25],"vertical).":[26],"For":[27],"small":[28],"diameter":[29,108],"(75":[30],"\u03bcm)":[31],"contacts,":[33],"measured":[35],"in":[36,61,126],"the":[37,62],"vertical":[38],"was":[40,88],"\u223c700":[41],"V,":[42,72,116],"with":[43],"an":[44],"on-state":[45],"resistance":[46],"(RON)":[47],"3":[49],"m\u03a9":[50,76],"cm2,":[51],"producing":[52,100],"figure-of-merit":[54,79],"VB2/RON":[55],"162.8":[57],"MW":[58,81],"cm\u22122.":[59,82],"Measured":[60],"lateral":[63],"geometry,":[64],"these":[65],"same":[66],"had":[68],"\u223c250":[71],"RON":[73],"1.7":[75],"cm2":[77],"36.5":[80],"The":[83],"forward":[84,118],"turn-on":[85],"(VF)":[87],"\u223c1.8":[89],"V":[90],"(defined":[91],"at":[92],"current":[94],"density":[95],"100":[97],"A":[98],"cm\u22122),":[99],"VB/VF":[101],"ratios":[102],"139\u2013389.":[104],"In":[105],"very":[106],"large":[107],"(\u223c5":[109],"mm)":[110],"rectifiers,":[111],"dropped":[113],"to":[114,121],"\u223c6":[115],"but":[117],"currents":[119],"up":[120],"500":[122],"mA":[123],"were":[124],"obtained":[125],"dc":[127],"measurements.":[128]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":5},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":3}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}