{"id":"https://openalex.org/W2017051144","doi":"https://doi.org/10.1063/1.126364","title":"Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers","display_name":"Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers","publication_year":2000,"publication_date":"2000-04-24","ids":{"openalex":"https://openalex.org/W2017051144","doi":"https://doi.org/10.1063/1.126364","mag":"2017051144"},"language":"en","primary_location":{"id":"doi:10.1063/1.126364","doi":"https://doi.org/10.1063/1.126364","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.126364","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103064609","display_name":"J. J. Sun","orcid":"https://orcid.org/0000-0002-0960-4690","observed_orcids":["https://orcid.org/0000-0002-0960-4690"]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"J. J. Sun","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065653797","display_name":"Koji Shimazawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Shimazawa","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071901142","display_name":"N. Kasahara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Kasahara","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022223588","display_name":"Kazuki Sato","orcid":"https://orcid.org/0000-0001-9319-725X","observed_orcids":["https://orcid.org/0000-0001-9319-725X"]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Sato","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005695578","display_name":"S. Saruki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Saruki","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006775037","display_name":"T. Kagami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kagami","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059433029","display_name":"O. Redon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"O. Redon","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109998758","display_name":"S. Araki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Araki","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112659972","display_name":"H. Morita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Morita","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110182196","display_name":"M. Matsuzaki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I181679074","display_name":"TDK (Japan)","ror":"https://ror.org/00ker7c87","country_code":"JP","type":"company","lineage":["https://openalex.org/I181679074"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Matsuzaki","raw_affiliation_strings":["Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Department, Data Storage Component Business Group, TDK Corporation, Otai-543, Saku-shi, Nagano, 385-8555, Japan","institution_ids":["https://openalex.org/I181679074"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I181679074"],"apc_list":null,"apc_paid":null,"fwci":6.9248,"has_fulltext":false,"cited_by_count":64,"citation_normalized_percentile":{"value":0.97663374,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"76","issue":"17","first_page":"2424","last_page":"2426"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"tunnel magnetoresistance","score":0.9649999737739563},{"id":"https://openalex.org/keywords/synthetic-antiferromagnet","display_name":"synthetic antiferromagnet","score":0.8259999752044678},{"id":"https://openalex.org/keywords/alox-tunnel-barrier","display_name":"AlOx tunnel barrier","score":0.7580000162124634},{"id":"https://openalex.org/keywords/thermal-stability","display_name":"thermal stability","score":0.7839999794960022},{"id":"https://openalex.org/keywords/interdiffusion","display_name":"interdiffusion","score":0.6200000047683716},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.8939999938011169},{"id":"https://openalex.org/keywords/submicron-junctions","display_name":"submicron junctions","score":0.7149999737739563}],"concepts":[{"id":"https://openalex.org/C117958382","wikidata":"https://www.wikidata.org/wiki/Q58347","display_name":"Magnetoresistance","level":3,"score":0.767094612121582},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7473903894424438},{"id":"https://openalex.org/C82217956","wikidata":"https://www.wikidata.org/wiki/Q184207","display_name":"Ferromagnetism","level":2,"score":0.7126811146736145},{"id":"https://openalex.org/C155355069","wikidata":"https://www.wikidata.org/wiki/Q575224","display_name":"Antiferromagnetism","level":2,"score":0.7109962701797485},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6916045546531677},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6511818170547485},{"id":"https://openalex.org/C59061564","wikidata":"https://www.wikidata.org/wiki/Q7783071","display_name":"Thermal stability","level":2,"score":0.4961493909358978},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.47759079933166504},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.47540339827537537},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4409417510032654},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.42843353748321533},{"id":"https://openalex.org/C83408046","wikidata":"https://www.wikidata.org/wiki/Q3183536","display_name":"Tunnel junction","level":3,"score":0.4140723645687103},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.28362250328063965},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.1923007369041443},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.17871657013893127},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15100997686386108},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.126364","doi":"https://doi.org/10.1063/1.126364","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.126364","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1967393072","https://openalex.org/W1970143822","https://openalex.org/W1979374322","https://openalex.org/W1991821708","https://openalex.org/W1997634188","https://openalex.org/W2004716110","https://openalex.org/W2052299573","https://openalex.org/W2060798601","https://openalex.org/W2068137657","https://openalex.org/W2082151825","https://openalex.org/W2162644048"],"related_works":["https://openalex.org/W1979374322","https://openalex.org/W2067031957","https://openalex.org/W2003362508","https://openalex.org/W2063876551","https://openalex.org/W1964012202","https://openalex.org/W2052857434","https://openalex.org/W2088695517","https://openalex.org/W2039964476","https://openalex.org/W2086182668","https://openalex.org/W2144114054"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"submicron-size":[3],"(down":[4],"to":[5,67,78,98,111],"0.273":[6],"\u03bcm2)":[7],"spin\u2013dependent":[8],"tunnel":[9],"junctions":[10,36],"with":[11],"resistance":[12],"as":[13,15],"low":[14],"\u223c30":[16],"\u03a9":[17],"\u03bcm2":[18],"have":[19],"been":[20],"fabricated,":[21],"where":[22],"the":[23,53,62,89,99],"tunneling":[24,45],"barrier":[25],"of":[26,48,56,75,91,102],"AlOx":[27],"was":[28],"formed":[29],"by":[30],"in":[31],"situ":[32],"natural":[33],"oxidation.":[34],"These":[35],"annealed":[37],"at":[38,81],"250":[39],"\u00b0C":[40],"for":[41,52,69],"5":[42],"h":[43],"showed":[44],"magnetoresistance":[46],"(TMR)":[47],"14.3%":[49],"and":[50,58,106],"25.8%":[51],"pinned":[54,73],"layers":[55],"CoFe/RuRhMn":[57],"CoFe/PtMn,":[59],"respectively,":[60],"while":[61],"TMR":[63],"is":[64,95],"further":[65],"increased":[66],"31.6%":[68],"a":[70],"synthetic":[71],"antiferromagnetic":[72],"layer":[74,94],"CoFe/Ru/CoFe/PtMn":[76],"due":[77],"less":[79],"interdiffusion":[80],"CoFe/Ru":[82],"interface.":[83],"The":[84],"investigation":[85],"has":[86],"indicated":[87],"that":[88],"growth":[90],"ultrathin":[92],"Al":[93],"very":[96],"sensitive":[97],"surface":[100,108],"roughness":[101,109],"bottom":[103],"ferromagnetic":[104],"electrode,":[105],"large":[107],"leads":[110],"small":[112],"junction":[113],"resistance.":[114]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}