{"id":"https://openalex.org/W2016999624","doi":"https://doi.org/10.1016/j.mee.2015.01.008","title":"Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration","display_name":"Effects of silicon via profile on passivation and metallization in TSV interposers for 2.5D integration","publication_year":2015,"publication_date":"2015-01-14","ids":{"openalex":"https://openalex.org/W2016999624","doi":"https://doi.org/10.1016/j.mee.2015.01.008","mag":"2016999624"},"language":"en","primary_location":{"id":"doi:10.1016/j.mee.2015.01.008","doi":"https://doi.org/10.1016/j.mee.2015.01.008","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mee.2015.01.008","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057975270","display_name":"Paul Lin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CN","NL"],"is_corresponding":true,"raw_author_name":"P.R. Lin","raw_affiliation_strings":["Beijing Microelectronics Technology Institute, Beijing, China","Department of Microelectronics, Delft University of Technology, Delft, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]},{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072654050","display_name":"G.Q. Zhang","orcid":"https://orcid.org/0000-0002-8023-5170","observed_orcids":["https://orcid.org/0000-0002-8023-5170","https://orcid.org/0009-0002-6920-8443"]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"G.Q. Zhang","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, Delft, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111587143","display_name":"Henk W. van Zeijl","orcid":"https://orcid.org/0000-0001-5204-1646","observed_orcids":["https://orcid.org/0000-0001-5204-1646"]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"H.W. van Zeijl","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, Delft, The Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037578599","display_name":"Binhao Lian","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"B.H. Lian","raw_affiliation_strings":["Beijing Microelectronics Technology Institute, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Y. Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Y. Wang","raw_affiliation_strings":["Beijing Microelectronics Technology Institute, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064887263","display_name":"Quanbin Yao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Q.B. Yao","raw_affiliation_strings":["Beijing Microelectronics Technology Institute, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5057975270"],"corresponding_institution_ids":["https://openalex.org/I4210089056","https://openalex.org/I98358874"],"apc_list":{"value":2860,"currency":"USD","value_usd":2860},"apc_paid":null,"fwci":0.9644,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.77433551,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"134","issue":null,"first_page":"22","last_page":"26"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10829","display_name":"Interconnection Networks and Systems","score":0.0,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/through-silicon-vias","display_name":"through-silicon vias","score":0.9950000047683716},{"id":"https://openalex.org/keywords/2-5d-integration","display_name":"2.5D integration","score":0.9900000095367432},{"id":"https://openalex.org/keywords/taper-angle","display_name":"taper angle","score":0.9449999928474426},{"id":"https://openalex.org/keywords/scalloping","display_name":"scalloping","score":0.6729999780654907},{"id":"https://openalex.org/keywords/aspect-ratio","display_name":"aspect ratio","score":0.9940000176429749},{"id":"https://openalex.org/keywords/sio2-passivation","display_name":"SiO2 passivation","score":0.878000020980835},{"id":"https://openalex.org/keywords/pecvd-deposition","display_name":"PECVD deposition","score":0.7080000042915344},{"id":"https://openalex.org/keywords/bosch-process","display_name":"Bosch process","score":0.8299999833106995},{"id":"https://openalex.org/keywords/isotropic-etching","display_name":"isotropic etching","score":0.9459999799728394},{"id":"https://openalex.org/keywords/interconnect-reliability","display_name":"interconnect reliability","score":0.35600000619888306}],"concepts":[{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.908942699432373},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7932641506195068},{"id":"https://openalex.org/C158802814","wikidata":"https://www.wikidata.org/wiki/Q6056418","display_name":"Interposer","level":4,"score":0.7795084714889526},{"id":"https://openalex.org/C38347018","wikidata":"https://www.wikidata.org/wiki/Q905958","display_name":"Plasma-enhanced chemical vapor deposition","level":3,"score":0.7167271375656128},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6072442531585693},{"id":"https://openalex.org/C193341735","wikidata":"https://www.wikidata.org/wiki/Q2988941","display_name":"Metallizing","level":3,"score":0.5964308381080627},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.5272409319877625},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5264086127281189},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5194817781448364},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.504988968372345},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.4974954426288605},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.43612760305404663},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.4328826367855072},{"id":"https://openalex.org/C202374169","wikidata":"https://www.wikidata.org/wiki/Q124291","display_name":"Electrical conductor","level":2,"score":0.4259624481201172},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3196539580821991},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.056327253580093384},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mee.2015.01.008","doi":"https://doi.org/10.1016/j.mee.2015.01.008","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mee.2015.01.008","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1966548041","https://openalex.org/W1969916605","https://openalex.org/W1977244625","https://openalex.org/W1997173697","https://openalex.org/W1997913942","https://openalex.org/W2018237554","https://openalex.org/W2030035073","https://openalex.org/W2068246091","https://openalex.org/W2075318123","https://openalex.org/W2084347051","https://openalex.org/W2118526491","https://openalex.org/W2141505721","https://openalex.org/W2164690066"],"related_works":["https://openalex.org/W2041185344","https://openalex.org/W4416877497","https://openalex.org/W2004049202","https://openalex.org/W2076139193","https://openalex.org/W2291928476","https://openalex.org/W2029873679","https://openalex.org/W4416882703","https://openalex.org/W2144481407","https://openalex.org/W2175525055","https://openalex.org/W4206904444"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}