{"id":"https://openalex.org/W2016555717","doi":"https://doi.org/10.1143/jjap.31.l316","title":"Dependence of Hooge Parameter of Compound Semiconductors on Temperature","display_name":"Dependence of Hooge Parameter of Compound Semiconductors on Temperature","publication_year":1992,"publication_date":"1992-03-01","ids":{"openalex":"https://openalex.org/W2016555717","doi":"https://doi.org/10.1143/jjap.31.l316","mag":"2016555717"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.31.l316","doi":"https://doi.org/10.1143/jjap.31.l316","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.31.l316","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110123341","display_name":"Munecazu Tacano","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Munecazu Tacano","raw_affiliation_strings":["Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba 305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba 305","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111598182","display_name":"H. Tanoue","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hisao Tanoue Hisao Tanoue","raw_affiliation_strings":["Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba 305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba 305","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112543877","display_name":"Yoshinobu Sugiyama","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yoshinobu Sugiyama Yoshinobu Sugiyama","raw_affiliation_strings":["Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba 305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, Umezono 1-1-4, Tsukuba 305","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":1.8542,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.8270374,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"31","issue":"3B","first_page":"L316","last_page":"L316"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.73580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.73580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.21359999477863312,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.005200000014156103,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hooge-parameter","display_name":"Hooge parameter","score":0.9079999923706055},{"id":"https://openalex.org/keywords/1-f-noise","display_name":"1/f noise","score":0.8809999823570251},{"id":"https://openalex.org/keywords/voltage-noise","display_name":"voltage noise","score":0.6169999837875366},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.7459999918937683},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.6890000104904175},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"indium phosphide","score":0.9890000224113464},{"id":"https://openalex.org/keywords/focused-ion-beam-implantation","display_name":"focused ion beam implantation","score":0.9449999928474426},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"molecular beam epitaxy","score":0.7269999980926514},{"id":"https://openalex.org/keywords/optical-phonon-scattering","display_name":"optical phonon scattering","score":0.8519999980926514},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.6779999732971191},{"id":"https://openalex.org/keywords/compound-semiconductors","display_name":"compound semiconductors","score":0.7620000243186951},{"id":"https://openalex.org/keywords/quantum-noise","display_name":"quantum noise","score":0.39800000190734863}],"concepts":[{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7202287316322327},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6668926477432251},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6253198981285095},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5373666882514954},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.5344677567481995},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5164218544960022},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.5159562230110168},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5012731552124023},{"id":"https://openalex.org/C24169881","wikidata":"https://www.wikidata.org/wiki/Q186608","display_name":"Phonon","level":2,"score":0.4850541949272156},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4221437871456146},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23490163683891296},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21161136031150818},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.18071570992469788},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1526990532875061},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.31.l316","doi":"https://doi.org/10.1143/jjap.31.l316","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.31.l316","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1966410198","https://openalex.org/W1986939321","https://openalex.org/W1991523630","https://openalex.org/W2003721809","https://openalex.org/W2014426329","https://openalex.org/W2015480869","https://openalex.org/W2020835679","https://openalex.org/W2025090543","https://openalex.org/W2047767856","https://openalex.org/W2068217152","https://openalex.org/W2098122034","https://openalex.org/W2149063959","https://openalex.org/W4231857666"],"related_works":["https://openalex.org/W1997336636","https://openalex.org/W2000409858","https://openalex.org/W2595592647","https://openalex.org/W2056076356","https://openalex.org/W1556639379","https://openalex.org/W1633751729","https://openalex.org/W1983827189","https://openalex.org/W1968895062","https://openalex.org/W2028415835","https://openalex.org/W2047150794"],"abstract_inverted_index":{"Voltage":[0],"noise":[1,29,86,121],"spectrum":[2],"densities":[3],"of":[4,20,32,51,65,94,102,126],"quarter-micron":[5],"filaments":[6],"made":[7],"by":[8],"GaAs,":[9],"InP":[10],"and":[11,26,77],"heterostructures":[12],"are":[13],"measured":[14],"in":[15,122],"detail":[16],"as":[17],"a":[18,103],"function":[19],"decreasing":[21,56],"temperature":[22],"to":[23,116],"10":[24,117],"K,":[25,55],"the":[27,48,68,91,123],"Hooge":[28],"parameter":[30],"\u03b1H":[31,50,66,93,101],"each":[33,39],"device":[34],"is":[35,67],"precisely":[36],"determined":[37],"at":[38,53,59,97],"temperature.":[40,61],"Focused":[41],"ion":[42],"beam":[43,105],"(FIB)":[44],"implanted":[45],"n-GaAs":[46],"has":[47,90],"smallest":[49,69,92],"1.0\u00d710-8":[52],"60":[54],"from":[57,83],"2\u00d710-6":[58],"room":[60],"The":[62,100],"derived":[63],"value":[64],"one":[70],"ever":[71],"reported":[72],"for":[73],"compound":[74],"semiconductor":[75],"devices,":[76],"compares":[78],"favorably":[79],"with":[80],"that":[81],"expected":[82],"quantum":[84],"1/f":[85,120],"theory.":[87],"FIB-implanted":[88],"n-InP":[89],"about":[95],"1\u00d710-7":[96],"50":[98],"K.":[99],"molecular":[104],"epitaxially":[106],"(MBE)":[107],"grown":[108],"In0.8Ga0.2As":[109],"heterostructure":[110],"depends":[111],"on":[112],"\u00b5po":[113],"between":[114],"1":[115],"m2/V\u00b7s,":[118],"realizing":[119],"cross":[124],"section":[125],"optical":[127],"phonon":[128],"scattering.":[129]},"counts_by_year":[{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}