{"id":"https://openalex.org/W2016554060","doi":"https://doi.org/10.1143/jjap.46.738","title":"Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol\u2013Gel Process","display_name":"Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol\u2013Gel Process","publication_year":2007,"publication_date":"2007-02-01","ids":{"openalex":"https://openalex.org/W2016554060","doi":"https://doi.org/10.1143/jjap.46.738","mag":"2016554060"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.46.738","doi":"https://doi.org/10.1143/jjap.46.738","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.46.738","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.738/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.738/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5007185999","display_name":"Byung Gyu Chae","orcid":"https://orcid.org/0000-0001-5721-3064","observed_orcids":["https://orcid.org/0000-0001-5721-3064"]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byung-Gyu Chae","raw_affiliation_strings":["Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111932357","display_name":"Hyun-Tak Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Tak Kim","raw_affiliation_strings":["Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Sun-Jin Yun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sun-Jin Yun","raw_affiliation_strings":["Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033315632","display_name":"Bong-Jun Kim","orcid":"https://orcid.org/0000-0001-7198-0411","observed_orcids":["https://orcid.org/0000-0001-7198-0411"]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bong-Jun Kim","raw_affiliation_strings":["Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077885778","display_name":"Yong-Wook Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong-Wook Lee","raw_affiliation_strings":["Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113898552","display_name":"Kwang\u2010Yong Kang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I142401562","display_name":"Electronics and Telecommunications Research Institute","ror":"https://ror.org/03ysstz10","country_code":"KR","type":"facility","lineage":["https://openalex.org/I142401562","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwang-Yong Kang","raw_affiliation_strings":["Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Basic Research Laboratory, ETRI, Daejeon 305-350, Republic of Korea","institution_ids":["https://openalex.org/I142401562"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I142401562"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.9314,"has_fulltext":true,"cited_by_count":34,"citation_normalized_percentile":{"value":0.7298998,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"46","issue":"2R","first_page":"738","last_page":"738"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12136","display_name":"Vanadium and Halogenation Chemistry","score":0.0,"subfield":{"id":"https://openalex.org/subfields/1604","display_name":"Inorganic Chemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/vanadium-dioxide","display_name":"vanadium dioxide","score":0.8040000200271606},{"id":"https://openalex.org/keywords/vo2-thin-films","display_name":"VO2 thin films","score":0.9760000109672546},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.7829999923706055},{"id":"https://openalex.org/keywords/sio2-si-substrate","display_name":"SiO2/Si substrate","score":0.9769999980926514},{"id":"https://openalex.org/keywords/sol-gel-thin-film-deposition","display_name":"sol-gel thin film deposition","score":0.6840000152587891},{"id":"https://openalex.org/keywords/metal-insulator-transition","display_name":"metal-insulator transition","score":0.7789999842643738},{"id":"https://openalex.org/keywords/phase-transformation","display_name":"phase transformation","score":0.4659999907016754},{"id":"https://openalex.org/keywords/interface-region","display_name":"interface region","score":0.3610000014305115},{"id":"https://openalex.org/keywords/polycrystalline-films","display_name":"polycrystalline films","score":0.7820000052452087}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7933366298675537},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7927915453910828},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.789385199546814},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.6710503101348877},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.5723778009414673},{"id":"https://openalex.org/C38398224","wikidata":"https://www.wikidata.org/wiki/Q48350","display_name":"Sol-gel","level":2,"score":0.4721876382827759},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.457913339138031},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4450581669807434},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.4296892285346985},{"id":"https://openalex.org/C504678139","wikidata":"https://www.wikidata.org/wiki/Q722","display_name":"Vanadium","level":2,"score":0.42717036604881287},{"id":"https://openalex.org/C168900304","wikidata":"https://www.wikidata.org/wiki/Q171407","display_name":"Valence (chemistry)","level":2,"score":0.41352179646492004},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.35926273465156555},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.3485775887966156},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2825351357460022},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1979684829711914},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.18734079599380493},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.13009685277938843},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12259352207183838},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.06910181045532227},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.46.738","doi":"https://doi.org/10.1143/jjap.46.738","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.46.738","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.738/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.46.738","doi":"https://doi.org/10.1143/jjap.46.738","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.46.738","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.738/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2016554060.pdf","grobid_xml":"https://content.openalex.org/works/W2016554060.grobid-xml"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W1559721071","https://openalex.org/W1667776829","https://openalex.org/W1964259280","https://openalex.org/W1970080019","https://openalex.org/W1973315818","https://openalex.org/W1978235173","https://openalex.org/W1979777993","https://openalex.org/W1980113525","https://openalex.org/W1994741888","https://openalex.org/W1998480843","https://openalex.org/W2003398006","https://openalex.org/W2003645630","https://openalex.org/W2006503376","https://openalex.org/W2009481031","https://openalex.org/W2014951065","https://openalex.org/W2036971618","https://openalex.org/W2037595295","https://openalex.org/W2046717976","https://openalex.org/W2067580066","https://openalex.org/W2076809879","https://openalex.org/W2079609894","https://openalex.org/W2084388113","https://openalex.org/W2084975813","https://openalex.org/W2088750791","https://openalex.org/W2117735755","https://openalex.org/W2281248403","https://openalex.org/W2390557625","https://openalex.org/W2962970169"],"related_works":["https://openalex.org/W1580597697","https://openalex.org/W2020521183","https://openalex.org/W2117735755","https://openalex.org/W4405039225","https://openalex.org/W3045789592","https://openalex.org/W2245111158","https://openalex.org/W2566237780","https://openalex.org/W1991640944","https://openalex.org/W7113262393","https://openalex.org/W1988098997"],"abstract_inverted_index":{"VO":[0,19,41,79],"2":[1,11,20,42,61,74,80],"thin":[2],"films":[3,33,58,70,100,147],"were":[4],"successfully":[5],"grown":[6,71],"on":[7,35,59,72,101],"sapphire":[8,36],"and":[9,96,138,168],"SiO":[10,73],"/Si":[12,75],"substrates":[13],"by":[14],"the":[15,40,51,68,77,91,94,99,103,111,115,118,121,132,136,155,162,166,169,173],"sol\u2013gel":[16],"process.":[17],"The":[18,32,159],"phase":[21,43,81,119],"was":[22],"well":[23],"formed":[24],"during":[25],"simplified":[26],"low":[27,128],"pressure":[28],"annealing":[29,52],"in":[30,55,152],"oxygen.":[31],"prepared":[34],"directly":[37],"crystallized":[38],"to":[39,141],"without":[44],"passing":[45,83],"through":[46,84],"intermediate":[47],"phases":[48,88,104],"with":[49,82,105],"increasing":[50],"temperature,":[53],"resulting":[54],"highly":[56],"[010]-oriented":[57],"Al":[60],"O":[62],"3":[63],"(1010)":[64],"substrate.":[65,97],"In":[66],"contrast,":[67],"polycrystal":[69,122],"reached":[76],"final":[78],"several":[85],"phases.":[86],"Mixed":[87],"existed":[89],"at":[90,110,131,154],"interface":[92,112,137,163],"between":[93],"film":[95,123],"For":[98],"sapphire,":[102],"low-valent":[106],"vanadium":[107],"appeared":[108],"drastically":[109],"region":[113],"along":[114],"depth,":[116],"whereas":[117],"of":[120,135,161,172],"slowly":[124],"changed":[125],"into":[126],"a":[127,142],"valence":[129],"state":[130],"initial":[133],"stage":[134],"then":[139],"returned":[140],"high":[143],"value.":[144],"And":[145],"both":[146],"showed":[148],"an":[149],"abrupt":[150],"change":[151],"resistivity":[153],"different":[156],"transition":[157,171],"temperature.":[158],"property":[160],"may":[164],"affect":[165],"crystallization":[167],"metal\u2013insulator":[170],"films.":[174]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":6},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2026-10-15T10:00:46.086208","created_date":"2016-06-24T00:00:00"}