{"id":"https://openalex.org/W2016354690","doi":"https://doi.org/10.1016/s0167-9317(99)00255-5","title":"An alternative method for measuring flatband voltage in MOS devices","display_name":"An alternative method for measuring flatband voltage in MOS devices","publication_year":1999,"publication_date":"1999-12-01","ids":{"openalex":"https://openalex.org/W2016354690","doi":"https://doi.org/10.1016/s0167-9317(99)00255-5","mag":"2016354690"},"language":"en","primary_location":{"id":"doi:10.1016/s0167-9317(99)00255-5","doi":"https://doi.org/10.1016/s0167-9317(99)00255-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0167-9317(99)00255-5","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015818858","display_name":"A. Benfdila","orcid":"https://orcid.org/0000-0003-3331-4746","observed_orcids":["https://orcid.org/0000-0003-3331-4746","https://orcid.org/0000-0001-7659-3824"]},"institutions":[{"id":"https://openalex.org/I4210159538","display_name":"Mouloud Mammeri University of Tizi-Ouzou","ror":"https://ror.org/050ktqq97","country_code":"DZ","type":"education","lineage":["https://openalex.org/I4210159538"]}],"countries":["DZ"],"is_corresponding":true,"raw_author_name":"A Benfdila","raw_affiliation_strings":["Microelectronics and Semiconductor Device Physics Laboratory (LMPDS), The Electronics Institute, University M. Mammeri, BP 17 RP, Tizi-Ouzou 15000, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics and Semiconductor Device Physics Laboratory (LMPDS), The Electronics Institute, University M. Mammeri, BP 17 RP, Tizi-Ouzou 15000, Algeria","institution_ids":["https://openalex.org/I4210159538"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002952441","display_name":"A. Chikouche","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210102186","display_name":"Centre de D\u00e9veloppement des Technologies Avanc\u00e9es","ror":"https://ror.org/01ay87255","country_code":"DZ","type":"facility","lineage":["https://openalex.org/I4210102186"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"A Chikouche","raw_affiliation_strings":["Centre de D\u00e9veloppement des Technologies Avanc\u00e9es (CDTA) El Madania, Algiers, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre de D\u00e9veloppement des Technologies Avanc\u00e9es (CDTA) El Madania, Algiers, Algeria","institution_ids":["https://openalex.org/I4210102186"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5015818858"],"corresponding_institution_ids":["https://openalex.org/I4210159538"],"apc_list":{"value":2860,"currency":"USD","value_usd":2860},"apc_paid":null,"fwci":0.4438,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.66648061,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"49","issue":"3-4","first_page":"205","last_page":"209"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.989300012588501,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.989300012588501,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.003100000089034438,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.001500000013038516,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flat-band-voltage","display_name":"flat-band voltage","score":0.9769999980926514},{"id":"https://openalex.org/keywords/metal-oxide-semiconductor-devices","display_name":"MOS devices","score":0.9810000061988831},{"id":"https://openalex.org/keywords/si-sio2-interface","display_name":"Si/SiO2 interface","score":0.8379999995231628},{"id":"https://openalex.org/keywords/surface-potential","display_name":"surface potential","score":0.9459999799728394},{"id":"https://openalex.org/keywords/frequency-response","display_name":"frequency response","score":0.41999998688697815},{"id":"https://openalex.org/keywords/gate-voltage","display_name":"gate voltage","score":0.4830000102519989}],"concepts":[{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.7815876007080078},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.6039370894432068},{"id":"https://openalex.org/C180205008","wikidata":"https://www.wikidata.org/wiki/Q159190","display_name":"Amplitude","level":2,"score":0.5653547644615173},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.47926947474479675},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45572465658187866},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.36594468355178833},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.355538010597229},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3320487141609192},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.33146774768829346},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21578311920166016},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.18837177753448486},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.10817986726760864},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06781786680221558},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0167-9317(99)00255-5","doi":"https://doi.org/10.1016/s0167-9317(99)00255-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0167-9317(99)00255-5","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1978894359","https://openalex.org/W2053632588","https://openalex.org/W2078482863","https://openalex.org/W2113335533","https://openalex.org/W2135573467"],"related_works":["https://openalex.org/W1988362557","https://openalex.org/W2043044116","https://openalex.org/W2051218117","https://openalex.org/W2612978448","https://openalex.org/W2487810188","https://openalex.org/W2080044658","https://openalex.org/W7100373457","https://openalex.org/W2007497617","https://openalex.org/W2077802241","https://openalex.org/W2119500406"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-09-26T08:19:03.415552","created_date":"2016-06-24T00:00:00"}