{"id":"https://openalex.org/W2016325130","doi":"https://doi.org/10.1143/jjap.46.7237","title":"Design of Unique Four-Bit/Cell Polycrystalline Silicon\u2013Oxide\u2013Silicon Nitride\u2013Oxide\u2013Silicon Devices Utilizing Vertical Channel of Silicon Pillar","display_name":"Design of Unique Four-Bit/Cell Polycrystalline Silicon\u2013Oxide\u2013Silicon Nitride\u2013Oxide\u2013Silicon Devices Utilizing Vertical Channel of Silicon Pillar","publication_year":2007,"publication_date":"2007-11-01","ids":{"openalex":"https://openalex.org/W2016325130","doi":"https://doi.org/10.1143/jjap.46.7237","mag":"2016325130"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.46.7237","doi":"https://doi.org/10.1143/jjap.46.7237","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.46.7237","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.7237/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.7237/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026197248","display_name":"Kyung-Sik Mun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyung Sik Mun","raw_affiliation_strings":["Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100666841","display_name":"Jae\u2010Ho Kim","orcid":"https://orcid.org/0000-0001-7365-7319","observed_orcids":["https://orcid.org/0000-0001-7365-7319"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Ho Kim","raw_affiliation_strings":["Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033679554","display_name":"Tae Whan Kim","orcid":"https://orcid.org/0000-0001-6899-4986","observed_orcids":["https://orcid.org/0000-0001-6899-4986"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae Whan Kim","raw_affiliation_strings":["Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111767322","display_name":"Kae Dal Kwack","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kae Dal Kwack","raw_affiliation_strings":["Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4575257"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.6305,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.73545888,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"46","issue":"11R","first_page":"7237","last_page":"7237"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9779999852180481,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9779999852180481,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.016100000590085983,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.002300000051036477,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sonos","display_name":"SONOS","score":0.6620000004768372},{"id":"https://openalex.org/keywords/silicon-pillars","display_name":"silicon pillars","score":0.9089999794960022},{"id":"https://openalex.org/keywords/vertical-channel","display_name":"vertical channel","score":0.8579999804496765},{"id":"https://openalex.org/keywords/floating-nodes","display_name":"floating nodes","score":0.5080000162124634},{"id":"https://openalex.org/keywords/charge-distribution","display_name":"charge distribution","score":0.5049999952316284},{"id":"https://openalex.org/keywords/data-retention","display_name":"data retention","score":0.9980000257492065},{"id":"https://openalex.org/keywords/fowler-nordheim-tunneling","display_name":"Fowler-Nordheim tunneling","score":0.8330000042915344},{"id":"https://openalex.org/keywords/channel-hot-electron-injection","display_name":"channel hot electron injection","score":0.9150000214576721},{"id":"https://openalex.org/keywords/memory-density","display_name":"memory density","score":0.6790000200271606}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7057666182518005},{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.6628081798553467},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6578733325004578},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.639704167842865},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.5684834122657776},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.45804116129875183},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.4486621618270874},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.4418851435184479},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.42764997482299805},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.42244529724121094},{"id":"https://openalex.org/C195114451","wikidata":"https://www.wikidata.org/wiki/Q1798244","display_name":"LOCOS","level":4,"score":0.41404783725738525},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.387453556060791},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.376067578792572},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.31813544034957886},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1902378499507904},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.0876569151878357},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08365225791931152},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.46.7237","doi":"https://doi.org/10.1143/jjap.46.7237","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.46.7237","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.7237/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.46.7237","doi":"https://doi.org/10.1143/jjap.46.7237","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.46.7237","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.46.7237/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2016325130.pdf","grobid_xml":"https://content.openalex.org/works/W2016325130.grobid-xml"},"referenced_works_count":21,"referenced_works":["https://openalex.org/W1485049094","https://openalex.org/W1583323342","https://openalex.org/W2036951294","https://openalex.org/W2054690570","https://openalex.org/W2069407422","https://openalex.org/W2070336550","https://openalex.org/W2076191236","https://openalex.org/W2100358539","https://openalex.org/W2101607215","https://openalex.org/W2124065310","https://openalex.org/W2130692995","https://openalex.org/W2133980904","https://openalex.org/W2134330702","https://openalex.org/W2136357986","https://openalex.org/W2138569240","https://openalex.org/W2151654658","https://openalex.org/W2155894102","https://openalex.org/W2158848088","https://openalex.org/W2160572418","https://openalex.org/W2170620265","https://openalex.org/W2171469899"],"related_works":["https://openalex.org/W1986651124","https://openalex.org/W7039735567","https://openalex.org/W2107465570","https://openalex.org/W2070831312","https://openalex.org/W2040051992","https://openalex.org/W6922332909","https://openalex.org/W2538101989","https://openalex.org/W2101009473","https://openalex.org/W1541883708","https://openalex.org/W2012553150"],"abstract_inverted_index":{"Unique":[0],"four-bit/cell":[1,124,130],"polycrystalline":[2],"silicon\u2013oxide\u2013silicon":[3],"nitride\u2013oxide\u2013silicon":[4],"(SONOS)":[5],"devices":[6,132],"with":[7],"separated":[8],"ONOs":[9],"utilizing":[10],"the":[11,44,47,55,60,63,67,74,89,94,98,119,122],"vertical":[12],"channel":[13,104],"of":[14,46,54,62,121],"a":[15,83],"silicon":[16,20],"pillar,":[17],"denoted":[18],"as":[19,82],"pillar":[21],"vertical-channel":[22],"SONOS":[23],"(SPVC-SONOS)":[24],"devices,":[25],"were":[26,40,86,115],"designed":[27],"to":[28,43,92,117,136],"increase":[29,137],"memory":[30,138],"density.":[31,139],"A":[32],"narrow":[33],"charge":[34],"distribution":[35],"and":[36,66,110],"improved":[37],"data":[38],"retention":[39],"achieved":[41],"owing":[42],"separation":[45],"storage":[48],"nitride":[49,90],"layers.":[50],"An":[51],"analytical":[52],"model":[53],"transient":[56],"characteristics":[57,96,114],"for":[58],"investigating":[59],"effects":[61],"dielectric":[64],"composition":[65],"erase":[68,75],"speed,":[69],"which":[70],"was":[71,77],"dependent":[72],"on":[73],"voltage,":[76],"developed.":[78],"Floating":[79],"nodes":[80],"acting":[81],"trap":[84],"site":[85],"added":[87],"in":[88],"layer":[91],"simulate":[93],"program":[95],"using":[97],"conventional":[99],"device":[100],"simulator":[101],"medici.":[102],"The":[103,127],"hot-electron-injection":[105],"program,":[106],"Fowler\u2013Nordheim":[107],"tunneling":[108],"erase,":[109],"reverse":[111],"mode":[112],"read":[113],"estimated":[116],"verify":[118],"operation":[120],"novel":[123],"SPVC-SONOS":[125,131],"devices.":[126],"proposed":[128],"unique":[129],"can":[133],"be":[134],"used":[135]},"counts_by_year":[],"updated_date":"2026-09-25T08:18:29.962427","created_date":"2016-06-24T00:00:00"}