{"id":"https://openalex.org/W2016302109","doi":"https://doi.org/10.1063/1.4916715","title":"TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films","display_name":"TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films","publication_year":2015,"publication_date":"2015-04-06","ids":{"openalex":"https://openalex.org/W2016302109","doi":"https://doi.org/10.1063/1.4916715","mag":"2016302109"},"language":"en","primary_location":{"id":"doi:10.1063/1.4916715","doi":"https://doi.org/10.1063/1.4916715","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4916715","pdf_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4916715/15157538/134105_1_online.pdf","source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2016302109"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4916715/15157538/134105_1_online.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051312800","display_name":"Patrick D. Lomenzo","orcid":"https://orcid.org/0000-0001-8208-3871","observed_orcids":["https://orcid.org/0000-0001-8208-3871"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Patrick D. Lomenzo","raw_affiliation_strings":["University of Florida 1 Department of Electrical and Computer Engineering, , Gainesville, Florida 32611, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida 1 Department of Electrical and Computer Engineering, , Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090142364","display_name":"Qanit Takmeel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Qanit Takmeel","raw_affiliation_strings":["Department of Materials Science and Engineering at the University of Florida 2 , Gainesville, Florida 32611, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering at the University of Florida 2 , Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043920891","display_name":"Chuanzhen Zhou","orcid":"https://orcid.org/0000-0002-9353-7231","observed_orcids":["https://orcid.org/0000-0002-9353-7231"]},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chuanzhen Zhou","raw_affiliation_strings":["Analytical Instrumentation Center 3 , College of Engineering at North Carolina State University, Raleigh, North Carolina 27696, USA"],"raw_orcid":"https://orcid.org/0000-0002-9353-7231","affiliations":[{"raw_affiliation_string":"Analytical Instrumentation Center 3 , College of Engineering at North Carolina State University, Raleigh, North Carolina 27696, USA","institution_ids":["https://openalex.org/I137902535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005527813","display_name":"Chris M. Fancher","orcid":"https://orcid.org/0000-0002-3952-5168","observed_orcids":["https://orcid.org/0000-0002-3952-5168"]},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chris M. Fancher","raw_affiliation_strings":["Department of Materials Science and Engineering at North Carolina State University 4 , Raleigh, North Carolina 27696, USA"],"raw_orcid":"https://orcid.org/0000-0002-3952-5168","affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering at North Carolina State University 4 , Raleigh, North Carolina 27696, USA","institution_ids":["https://openalex.org/I137902535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048005381","display_name":"Eric S. Lambers","orcid":"https://orcid.org/0000-0003-2756-3615","observed_orcids":["https://orcid.org/0000-0003-2756-3615"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Eric Lambers","raw_affiliation_strings":["Major Analytical Instrumentation Center at the University of Florida 5 , Gainesville, Florida 32611, USA"],"raw_orcid":"https://orcid.org/0000-0003-2756-3615","affiliations":[{"raw_affiliation_string":"Major Analytical Instrumentation Center at the University of Florida 5 , Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106630353","display_name":"Nicholas Guy Rudawski","orcid":"https://orcid.org/0000-0003-4318-5597","observed_orcids":["https://orcid.org/0000-0003-4318-5597"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nicholas G. Rudawski","raw_affiliation_strings":["Major Analytical Instrumentation Center at the University of Florida 5 , Gainesville, Florida 32611, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Major Analytical Instrumentation Center at the University of Florida 5 , Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003785721","display_name":"Jacob L. Jones","orcid":"https://orcid.org/0000-0002-9182-0957","observed_orcids":["https://orcid.org/0000-0002-9182-0957","https://orcid.org/0000-0003-3544-7294"]},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jacob L. Jones","raw_affiliation_strings":["Department of Materials Science and Engineering at North Carolina State University 4 , Raleigh, North Carolina 27696, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering at North Carolina State University 4 , Raleigh, North Carolina 27696, USA","institution_ids":["https://openalex.org/I137902535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009679658","display_name":"Saeed S. Moghaddam","orcid":"https://orcid.org/0000-0002-9171-6500","observed_orcids":["https://orcid.org/0000-0002-9171-6500"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Saeed Moghaddam","raw_affiliation_strings":["Department of Mechanical and Aerospace Engineering at the University of Florida 6 , Gainesville, Florida 32611, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Mechanical and Aerospace Engineering at the University of Florida 6 , Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086844810","display_name":"Toshikazu Nishida","orcid":"https://orcid.org/0000-0002-7148-2102","observed_orcids":["https://orcid.org/0000-0002-7148-2102"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Toshikazu Nishida","raw_affiliation_strings":["University of Florida 1 Department of Electrical and Computer Engineering, , Gainesville, Florida 32611, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Florida 1 Department of Electrical and Computer Engineering, , Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":6.7143,"has_fulltext":true,"cited_by_count":209,"citation_normalized_percentile":{"value":0.9733929,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":"117","issue":"13","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/built-in-electric-field","display_name":"built-in electric field","score":0.8740000128746033},{"id":"https://openalex.org/keywords/electric-field-cycling","display_name":"electric field cycling","score":0.8410000205039978},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.8889999985694885},{"id":"https://openalex.org/keywords/remanent-polarization","display_name":"remanent polarization","score":0.7549999952316284},{"id":"https://openalex.org/keywords/dielectric-constant","display_name":"dielectric constant","score":0.9300000071525574},{"id":"https://openalex.org/keywords/ferroelectric-memory","display_name":"ferroelectric memory","score":0.6349999904632568}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.8960478901863098},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8155022263526917},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.7093299031257629},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.6518567204475403},{"id":"https://openalex.org/C126530901","wikidata":"https://www.wikidata.org/wiki/Q432635","display_name":"Coercivity","level":2,"score":0.5961101055145264},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.5683336853981018},{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.5643118619918823},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.4949437975883484},{"id":"https://openalex.org/C168651791","wikidata":"https://www.wikidata.org/wiki/Q211569","display_name":"Permittivity","level":3,"score":0.4899107813835144},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46528735756874084},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.45978763699531555},{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.44601985812187195},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4249800741672516},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3303290009498596},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.32293206453323364},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3047977387905121},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.189816415309906},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10315752029418945},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.4916715","doi":"https://doi.org/10.1063/1.4916715","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4916715","pdf_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4916715/15157538/134105_1_online.pdf","source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1063/1.4916715","doi":"https://doi.org/10.1063/1.4916715","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4916715","pdf_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4916715/15157538/134105_1_online.pdf","source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G3749800985","display_name":null,"funder_award_id":"1207293","funder_id":"https://openalex.org/F4320337367","funder_display_name":"Division of Materials Research"},{"id":"https://openalex.org/G3904516364","display_name":null,"funder_award_id":"2013-RJ-2372G","funder_id":"https://openalex.org/F4320306087","funder_display_name":"Semiconductor Research Corporation"},{"id":"https://openalex.org/G6267111421","display_name":"FRG: Unit Defect and Microstructural Processes at Metal/Dielectric Interfaces: An Integrated Experimental and Simulation Approach","funder_award_id":"1207293","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320306087","display_name":"Semiconductor Research Corporation","ror":"https://ror.org/047z4n946"},{"id":"https://openalex.org/F4320310009","display_name":"University of Florida","ror":"https://ror.org/02y3ad647"},{"id":"https://openalex.org/F4320310013","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06"},{"id":"https://openalex.org/F4320337367","display_name":"Division of Materials Research","ror":"https://ror.org/01pc7k308"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2016302109.pdf","grobid_xml":"https://content.openalex.org/works/W2016302109.grobid-xml"},"referenced_works_count":44,"referenced_works":["https://openalex.org/W1494215899","https://openalex.org/W1625170149","https://openalex.org/W1628672899","https://openalex.org/W1647406517","https://openalex.org/W1963509709","https://openalex.org/W1966118057","https://openalex.org/W1976174178","https://openalex.org/W1976902828","https://openalex.org/W1983176018","https://openalex.org/W1991738800","https://openalex.org/W1993978143","https://openalex.org/W1994461405","https://openalex.org/W1995362002","https://openalex.org/W1997362148","https://openalex.org/W1997796793","https://openalex.org/W2012512650","https://openalex.org/W2015318188","https://openalex.org/W2016195065","https://openalex.org/W2018452678","https://openalex.org/W2023413597","https://openalex.org/W2030237677","https://openalex.org/W2039428752","https://openalex.org/W2040165161","https://openalex.org/W2040404598","https://openalex.org/W2044683682","https://openalex.org/W2046220726","https://openalex.org/W2068436606","https://openalex.org/W2070882565","https://openalex.org/W2073535522","https://openalex.org/W2076972388","https://openalex.org/W2080605854","https://openalex.org/W2081610269","https://openalex.org/W2085867935","https://openalex.org/W2086529792","https://openalex.org/W2087757714","https://openalex.org/W2094312555","https://openalex.org/W2099985803","https://openalex.org/W2119033937","https://openalex.org/W2157057971","https://openalex.org/W2162412943","https://openalex.org/W2166060383","https://openalex.org/W2315380828","https://openalex.org/W2323198919","https://openalex.org/W2334220755"],"related_works":["https://openalex.org/W3006592753","https://openalex.org/W3119070171","https://openalex.org/W2080605854","https://openalex.org/W3127097655","https://openalex.org/W3185756310","https://openalex.org/W4210944390","https://openalex.org/W4392518307","https://openalex.org/W3043719027","https://openalex.org/W2473045264","https://openalex.org/W2087757714"],"abstract_inverted_index":{"Ferroelectric":[0],"HfO2-based":[1],"thin":[2,52,79,198],"films,":[3,80],"which":[4,60,139],"can":[5],"exhibit":[6,61],"ferroelectric":[7,26,64,73,143],"properties":[8,34,45,84],"down":[9],"to":[10,29,134,145,148,166,207],"sub-10":[11],"nm":[12,48],"thicknesses,":[13],"are":[14,92,116],"a":[15,56,106,173],"promising":[16],"candidate":[17],"for":[18],"emerging":[19],"high":[20],"density":[21],"memory":[22],"technologies.":[23],"As":[24],"the":[25,31,42,68,72,76,81,101,122,126,141,156,168,211],"thickness":[27],"continues":[28],"shrink,":[30],"electrode-ferroelectric":[32],"interface":[33,44,83,104],"play":[35],"an":[36,135,185],"increasingly":[37],"important":[38],"role.":[39],"We":[40],"investigate":[41],"TaN":[43,57,87],"on":[46],"10":[47],"thick":[49],"Si-doped":[50,77,196],"HfO2":[51,78,197],"films":[53,199],"fabricated":[54],"in":[55,176,181,195],"metal-ferroelectric-metal":[58],"stack":[59],"highly":[62],"asymmetric":[63,69],"characteristics.":[65],"To":[66],"understand":[67],"behavior":[70],"of":[71,75,85,109,125,187],"characteristics":[74],"chemical":[82,123],"sputtered":[86],"bottom":[88,102,127,158],"and":[89,105,128,179,204],"top":[90,129],"electrodes":[91],"probed":[93],"with":[94,172,200],"x-ray":[95],"photoelectron":[96],"spectroscopy.":[97],"Ta-O":[98],"bonds":[99,111],"at":[100,112,155],"electrode":[103,114,130,159],"significant":[107],"presence":[108],"Hf-N":[110],"both":[113],"interfaces":[115,131],"identified.":[117],"It":[118],"is":[119,164,193,205],"shown":[120,165,206],"that":[121],"heterogeneity":[124],"gives":[132],"rise":[133],"internal":[136,169,212],"electric":[137,170,213],"field,":[138],"causes":[140],"as-grown":[142],"domains":[144],"preferentially":[146],"polarize":[147],"screen":[149],"positively":[150],"charged":[151],"oxygen":[152],"vacancies":[153],"aggregated":[154],"oxidized":[157],"interface.":[160],"Electric":[161],"field":[162,171],"cycling":[163],"reduce":[167],"concomitant":[174],"increase":[175],"remanent":[177],"polarization":[178],"decrease":[180],"relative":[182],"permittivity.":[183],"Through":[184],"analysis":[186],"pulsed":[188],"transient":[189],"switching":[190],"currents,":[191],"back-switching":[192],"observed":[194],"pinched":[201],"hysteresis":[202],"loops":[203],"be":[208],"influenced":[209],"by":[210],"field.":[214]},"counts_by_year":[{"year":2026,"cited_by_count":12},{"year":2025,"cited_by_count":12},{"year":2024,"cited_by_count":16},{"year":2023,"cited_by_count":23},{"year":2022,"cited_by_count":26},{"year":2021,"cited_by_count":30},{"year":2020,"cited_by_count":26},{"year":2019,"cited_by_count":16},{"year":2018,"cited_by_count":14},{"year":2017,"cited_by_count":15},{"year":2016,"cited_by_count":9},{"year":2015,"cited_by_count":10}],"updated_date":"2026-11-15T12:55:33.944570","created_date":"2016-06-24T00:00:00"}