{"id":"https://openalex.org/W2016184522","doi":"https://doi.org/10.1063/1.3259407","title":"Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack","display_name":"Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack","publication_year":2009,"publication_date":"2009-11-15","ids":{"openalex":"https://openalex.org/W2016184522","doi":"https://doi.org/10.1063/1.3259407","mag":"2016184522"},"language":"en","primary_location":{"id":"doi:10.1063/1.3259407","doi":"https://doi.org/10.1063/1.3259407","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3259407","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071031997","display_name":"Masaharu Kobayashi","orcid":"https://orcid.org/0000-0002-7945-6136","observed_orcids":["https://orcid.org/0000-0002-7945-6136"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Masaharu Kobayashi","raw_affiliation_strings":["Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062522713","display_name":"Gaurav Thareja","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gaurav Thareja","raw_affiliation_strings":["Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108419421","display_name":"Masato Ishibashi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Masato Ishibashi","raw_affiliation_strings":["Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114734475","display_name":"Yun Sun","orcid":"https://orcid.org/0000-0002-7300-5190","observed_orcids":["https://orcid.org/0000-0002-7300-5190"]},"institutions":[{"id":"https://openalex.org/I2801935854","display_name":"SLAC National Accelerator Laboratory","ror":"https://ror.org/05gzmn429","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I2801935854","https://openalex.org/I39565521","https://openalex.org/I97018004"]},{"id":"https://openalex.org/I4210120900","display_name":"Stanford Synchrotron Radiation Lightsource","ror":"https://ror.org/02vzbm991","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I2801935854","https://openalex.org/I39565521","https://openalex.org/I4210120900","https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yun Sun","raw_affiliation_strings":["Stanford Linear Acceleration Center 2 Stanford Synchrotron Radiation Laboratory, , Menlo Park, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford Linear Acceleration Center 2 Stanford Synchrotron Radiation Laboratory, , Menlo Park, California 94305, USA","institution_ids":["https://openalex.org/I2801935854","https://openalex.org/I4210120900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103482188","display_name":"Peter B. Griffin","orcid":"https://orcid.org/0000-0003-0966-800X","observed_orcids":["https://orcid.org/0000-0003-0966-800X"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peter Griffin","raw_affiliation_strings":["Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108292876","display_name":"Jim P. McVittie","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jim McVittie","raw_affiliation_strings":["Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033023422","display_name":"P. Pianetta","orcid":"https://orcid.org/0000-0002-4834-6014","observed_orcids":["https://orcid.org/0000-0002-4834-6014"]},"institutions":[{"id":"https://openalex.org/I2801935854","display_name":"SLAC National Accelerator Laboratory","ror":"https://ror.org/05gzmn429","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I2801935854","https://openalex.org/I39565521","https://openalex.org/I97018004"]},{"id":"https://openalex.org/I4210120900","display_name":"Stanford Synchrotron Radiation Lightsource","ror":"https://ror.org/02vzbm991","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I2801935854","https://openalex.org/I39565521","https://openalex.org/I4210120900","https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Piero Pianetta","raw_affiliation_strings":["Stanford Linear Acceleration Center 2 Stanford Synchrotron Radiation Laboratory, , Menlo Park, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford Linear Acceleration Center 2 Stanford Synchrotron Radiation Laboratory, , Menlo Park, California 94305, USA","institution_ids":["https://openalex.org/I2801935854","https://openalex.org/I4210120900"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065754731","display_name":"Krishna C. Saraswat","orcid":"https://orcid.org/0000-0003-1894-6315","observed_orcids":["https://orcid.org/0000-0003-1894-6315"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Krishna Saraswat","raw_affiliation_strings":["Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085831106","display_name":"Yoshio Nishi","orcid":"https://orcid.org/0000-0002-2651-0952","observed_orcids":["https://orcid.org/0000-0002-2651-0952"]},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yoshio Nishi","raw_affiliation_strings":["Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Stanford University 1 Department of Electrical Engineering, , 420 Via Palou Mall, Stanford, California 94305, USA","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":4.1242,"has_fulltext":false,"cited_by_count":83,"citation_normalized_percentile":{"value":0.93565807,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"106","issue":"10","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/germanium-oxide","display_name":"germanium oxide","score":0.6679999828338623},{"id":"https://openalex.org/keywords/free-radical-oxidation","display_name":"free radical oxidation","score":0.9359999895095825},{"id":"https://openalex.org/keywords/oxidation-kinetics","display_name":"oxidation kinetics","score":0.7770000100135803},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.9350000023841858},{"id":"https://openalex.org/keywords/band-offset","display_name":"band offset","score":0.7630000114440918}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.669205904006958},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5508353114128113},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.5252149701118469},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47776663303375244},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4706681966781616},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4603860378265381},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4306378662586212},{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.4259060323238373},{"id":"https://openalex.org/C168900304","wikidata":"https://www.wikidata.org/wiki/Q171407","display_name":"Valence (chemistry)","level":2,"score":0.4114309251308441},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3882666528224945},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3578076958656311},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3008992373943329},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.27558377385139465},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.1920645833015442},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.13996711373329163},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.3259407","doi":"https://doi.org/10.1063/1.3259407","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3259407","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1610280891","https://openalex.org/W1635248473","https://openalex.org/W1659914018","https://openalex.org/W1977352735","https://openalex.org/W1981076603","https://openalex.org/W1982701132","https://openalex.org/W2000367370","https://openalex.org/W2003645630","https://openalex.org/W2007619360","https://openalex.org/W2034931617","https://openalex.org/W2035454042","https://openalex.org/W2046109959","https://openalex.org/W2053393978","https://openalex.org/W2066342630","https://openalex.org/W2068382560","https://openalex.org/W2075050869","https://openalex.org/W2076343339","https://openalex.org/W2078722583","https://openalex.org/W2090214562","https://openalex.org/W2093914900","https://openalex.org/W2109856880","https://openalex.org/W2138181280","https://openalex.org/W2139424966","https://openalex.org/W2143358323","https://openalex.org/W2153595058","https://openalex.org/W2156726374","https://openalex.org/W2158568871"],"related_works":["https://openalex.org/W1997421943","https://openalex.org/W2158965286","https://openalex.org/W2595170889","https://openalex.org/W2471234438","https://openalex.org/W2067599501","https://openalex.org/W2144417944","https://openalex.org/W2980310094","https://openalex.org/W1988400311","https://openalex.org/W2019908742","https://openalex.org/W2064650306"],"abstract_inverted_index":{"GeO":[0],"2":[1],"was":[2,20,45],"grown":[3],"by":[4],"a":[5,77],"slot-plane-antenna":[6],"(SPA)":[7],"high":[8,122],"density":[9,88],"radical":[10,17,25],"oxidation,":[11,26],"and":[12,100,116],"the":[13,23,98,101],"oxidation":[14,18,42],"kinetics":[15],"of":[16,31,68,105],"GeO2":[19,78,106],"examined.":[21],"By":[22,93],"SPA":[24],"no":[27],"substrate":[28],"orientation":[29],"dependence":[30],"growth":[32],"rate":[33],"attributed":[34],"to":[35,51,60,109,113,123],"highly":[36,49],"reactive":[37],"oxygen":[38],"radicals":[39],"with":[40,76,107],"low":[41,85],"activation":[43],"energy":[44],"demonstrated,":[46],"which":[47,119],"is":[48],"beneficial":[50],"three-dimensional":[52],"structure":[53],"devices,":[54],"such":[55],"as":[56],"multigate":[57],"field-effect":[58],"transistors,":[59],"form":[61],"conformal":[62],"gate":[63,74,125],"dielectrics.":[64],"The":[65],"electrical":[66],"properties":[67],"an":[69],"aluminum":[70],"oxide":[71],"(Al2O3)":[72],"metal-oxide-semiconductor":[73],"stack":[75],"interfacial":[79],"layer":[80],"were":[81,111],"investigated,":[82],"showing":[83],"very":[84],"interface":[86],"state":[87],"(Dit),":[89],"1.4\u00d71011":[90],"cm\u22122":[91],"eV\u22121.":[92],"synchrotron":[94],"radiation":[95],"photoemission":[96],"spectroscopy,":[97],"conduction":[99],"valence":[102],"band":[103],"offsets":[104],"respect":[108],"Ge":[110],"estimated":[112],"be":[114],"1.2\u00b10.3":[115],"3.6\u00b10.1":[117],"eV,":[118],"are":[120],"sufficiently":[121],"suppress":[124],"leakage.":[126]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":8},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":6},{"year":2015,"cited_by_count":11},{"year":2014,"cited_by_count":11},{"year":2013,"cited_by_count":10},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}