{"id":"https://openalex.org/W2016109083","doi":"https://doi.org/10.1016/j.mssp.2014.08.008","title":"Structural, optical and electrical studies on Mg-doped NiO thin films for sensitivity applications","display_name":"Structural, optical and electrical studies on Mg-doped NiO thin films for sensitivity applications","publication_year":2014,"publication_date":"2014-09-20","ids":{"openalex":"https://openalex.org/W2016109083","doi":"https://doi.org/10.1016/j.mssp.2014.08.008","mag":"2016109083"},"language":"en","primary_location":{"id":"doi:10.1016/j.mssp.2014.08.008","doi":"https://doi.org/10.1016/j.mssp.2014.08.008","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mssp.2014.08.008","pdf_url":null,"source":{"id":"https://openalex.org/S82126420","display_name":"Materials Science in Semiconductor Processing","issn_l":"1369-8001","issn":["1369-8001","1873-4081"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science in Semiconductor Processing","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"M. Ben Amor","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I108714496","display_name":"Tunis University","ror":"https://ror.org/02q1spa57","country_code":"TN","type":"education","lineage":["https://openalex.org/I108714496"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"M. Ben Amor","raw_affiliation_strings":["Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia","institution_ids":["https://openalex.org/I108714496"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073215571","display_name":"Abdelwaheb Boukhachem","orcid":"https://orcid.org/0000-0003-2030-483X","observed_orcids":["https://orcid.org/0000-0003-2030-483X"]},"institutions":[{"id":"https://openalex.org/I108714496","display_name":"Tunis University","ror":"https://ror.org/02q1spa57","country_code":"TN","type":"education","lineage":["https://openalex.org/I108714496"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"A. Boukhachem","raw_affiliation_strings":["Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia","institution_ids":["https://openalex.org/I108714496"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109210098","display_name":"K. Boubaker","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I108714496","display_name":"Tunis University","ror":"https://ror.org/02q1spa57","country_code":"TN","type":"education","lineage":["https://openalex.org/I108714496"]}],"countries":["TN"],"is_corresponding":true,"raw_author_name":"K. Boubaker","raw_affiliation_strings":["Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia","institution_ids":["https://openalex.org/I108714496"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5040831796","display_name":"M. Amlouk","orcid":"https://orcid.org/0000-0001-8017-3187","observed_orcids":["https://orcid.org/0000-0001-8017-3187"]},"institutions":[{"id":"https://openalex.org/I108714496","display_name":"Tunis University","ror":"https://ror.org/02q1spa57","country_code":"TN","type":"education","lineage":["https://openalex.org/I108714496"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"M. Amlouk","raw_affiliation_strings":["Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Unit\u00e9 de Physique des dispositifs \u00e0 Semi-conducteurs UPDS, Facult\u00e9 des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia","institution_ids":["https://openalex.org/I108714496"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5109210098"],"corresponding_institution_ids":["https://openalex.org/I108714496"],"apc_list":{"value":3540,"currency":"USD","value_usd":3540},"apc_paid":null,"fwci":2.9887,"has_fulltext":false,"cited_by_count":88,"citation_normalized_percentile":{"value":0.91807143,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":"27","issue":null,"first_page":"994","last_page":"1006"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.3889000117778778,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.3889000117778778,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.14319999516010284,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13104","display_name":"Chemical and Physical Properties of Materials","score":0.09309999644756317,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/spray-pyrolysis","display_name":"spray pyrolysis","score":0.9279999732971191},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.5519999861717224},{"id":"https://openalex.org/keywords/urbach-energy","display_name":"Urbach energy","score":0.9980000257492065},{"id":"https://openalex.org/keywords/electrical-conductivity","display_name":"electrical conductivity","score":0.847000002861023},{"id":"https://openalex.org/keywords/activation-energy","display_name":"activation energy","score":0.7170000076293945},{"id":"https://openalex.org/keywords/ac-conductivity","display_name":"AC conductivity","score":0.9610000252723694},{"id":"https://openalex.org/keywords/correlated-barrier-hopping-model","display_name":"correlated barrier hopping","score":0.8090000152587891},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.3970000147819519},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.37700000405311584},{"id":"https://openalex.org/keywords/structural-properties","display_name":"structural properties","score":0.5450000166893005}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8680741786956787},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.7407527565956116},{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.7329667806625366},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.6464142203330994},{"id":"https://openalex.org/C137637335","wikidata":"https://www.wikidata.org/wiki/Q899604","display_name":"Crystallite","level":2,"score":0.595032811164856},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5796179175376892},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5783037543296814},{"id":"https://openalex.org/C95121573","wikidata":"https://www.wikidata.org/wiki/Q190474","display_name":"Activation energy","level":2,"score":0.505219042301178},{"id":"https://openalex.org/C543218039","wikidata":"https://www.wikidata.org/wiki/Q660","display_name":"Magnesium","level":2,"score":0.4814450144767761},{"id":"https://openalex.org/C131540310","wikidata":"https://www.wikidata.org/wiki/Q907564","display_name":"Conductivity","level":2,"score":0.4554526209831238},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.4382162392139435},{"id":"https://openalex.org/C2776652806","wikidata":"https://www.wikidata.org/wiki/Q1985706","display_name":"Nickel oxide","level":3,"score":0.41305792331695557},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.35905158519744873},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1382705271244049},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.11959049105644226},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.1065315306186676},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.09130403399467468},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.mssp.2014.08.008","doi":"https://doi.org/10.1016/j.mssp.2014.08.008","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.mssp.2014.08.008","pdf_url":null,"source":{"id":"https://openalex.org/S82126420","display_name":"Materials Science in Semiconductor Processing","issn_l":"1369-8001","issn":["1369-8001","1873-4081"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science in Semiconductor Processing","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"score":0.5,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":36,"referenced_works":["https://openalex.org/W192198216","https://openalex.org/W1968789832","https://openalex.org/W1973405303","https://openalex.org/W1976927697","https://openalex.org/W1981317828","https://openalex.org/W1994024438","https://openalex.org/W1994423159","https://openalex.org/W2009045985","https://openalex.org/W2010100140","https://openalex.org/W2012736030","https://openalex.org/W2027207617","https://openalex.org/W2028002455","https://openalex.org/W2031889688","https://openalex.org/W2032136437","https://openalex.org/W2035308659","https://openalex.org/W2038493362","https://openalex.org/W2042695504","https://openalex.org/W2054446594","https://openalex.org/W2054877591","https://openalex.org/W2056399422","https://openalex.org/W2065040514","https://openalex.org/W2066829889","https://openalex.org/W2069165291","https://openalex.org/W2075256315","https://openalex.org/W2079728256","https://openalex.org/W2082687719","https://openalex.org/W2084069326","https://openalex.org/W2087325540","https://openalex.org/W2088708628","https://openalex.org/W2091779507","https://openalex.org/W2106274991","https://openalex.org/W2116180804","https://openalex.org/W2126277860","https://openalex.org/W2134038678","https://openalex.org/W2140499196","https://openalex.org/W2167590372"],"related_works":["https://openalex.org/W2134842546","https://openalex.org/W1969213138","https://openalex.org/W1990493890","https://openalex.org/W2795022564","https://openalex.org/W2964834864","https://openalex.org/W2060059003","https://openalex.org/W4200370978","https://openalex.org/W4280521587","https://openalex.org/W4321107779","https://openalex.org/W4282968573"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":10},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":12},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":9},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":9},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":6},{"year":2016,"cited_by_count":8},{"year":2015,"cited_by_count":6}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2025-10-10T00:00:00"}