{"id":"https://openalex.org/W2015997867","doi":"https://doi.org/10.1063/1.4870962","title":"Thermoelectric power factor enhancement with gate-all-around silicon nanowires","display_name":"Thermoelectric power factor enhancement with gate-all-around silicon nanowires","publication_year":2014,"publication_date":"2014-04-09","ids":{"openalex":"https://openalex.org/W2015997867","doi":"https://doi.org/10.1063/1.4870962","mag":"2015997867"},"language":"en","primary_location":{"id":"doi:10.1063/1.4870962","doi":"https://doi.org/10.1063/1.4870962","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4870962","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://www.osti.gov/servlets/purl/1386383","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091678808","display_name":"Benjamin Michael Curtin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benjamin M. Curtin","raw_affiliation_strings":["California 1 , Santa Barbara, 93106, USA","Department of Electrical and Computer Engineering, University of California 1 , Santa Barbara, 93106, USA","Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"California 1 , Santa Barbara, 93106, USA","institution_ids":[]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of California 1 , Santa Barbara, 93106, USA","institution_ids":["https://openalex.org/I154570441"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102770958","display_name":"John Edward Bowers","orcid":"https://orcid.org/0000-0003-4270-8296","observed_orcids":["https://orcid.org/0000-0003-4270-8296"]},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John E. Bowers","raw_affiliation_strings":["California 1 , Santa Barbara, 93106, USA","California 2 , Santa Barbara, 93106, USA","Department of Electrical and Computer Engineering, University of California 1 , Santa Barbara, 93106, USA","Materials Department, University of California 2 , Santa Barbara, 93106, USA","Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA","Materials Department, University of California, Santa Barbara, California 93106, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"California 1 , Santa Barbara, 93106, USA","institution_ids":[]},{"raw_affiliation_string":"California 2 , Santa Barbara, 93106, USA","institution_ids":["https://openalex.org/I154570441"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of California 1 , Santa Barbara, 93106, USA","institution_ids":["https://openalex.org/I154570441"]},{"raw_affiliation_string":"Materials Department, University of California 2 , Santa Barbara, 93106, USA","institution_ids":["https://openalex.org/I154570441"]},{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA","institution_ids":["https://openalex.org/I154570441"]},{"raw_affiliation_string":"Materials Department, University of California, Santa Barbara, California 93106, USA","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I154570441"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.4817,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.80791949,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"115","issue":"14","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":0.9789999723434448,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":0.9789999723434448,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.013100000098347664,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.002199999988079071,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thermoelectric-power-factor","display_name":"thermoelectric power factor","score":0.9490000009536743},{"id":"https://openalex.org/keywords/seebeck-coefficient","display_name":"Seebeck coefficient","score":0.9589999914169312},{"id":"https://openalex.org/keywords/quantum-confinement","display_name":"quantum confinement","score":0.6470000147819519},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.7450000047683716},{"id":"https://openalex.org/keywords/ionized-impurity-scattering","display_name":"ionized impurity scattering","score":0.9010000228881836},{"id":"https://openalex.org/keywords/phonon-scattering","display_name":"phonon scattering","score":0.9319999814033508},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.7620000243186951},{"id":"https://openalex.org/keywords/electrical-conductivity","display_name":"electrical conductivity","score":0.7509999871253967},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.5460000038146973},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":0.5709999799728394},{"id":"https://openalex.org/keywords/thermoelectric-figure-of-merit","display_name":"figure of merit ZT","score":0.7559999823570251}],"concepts":[{"id":"https://openalex.org/C112625512","wikidata":"https://www.wikidata.org/wiki/Q1091448","display_name":"Seebeck coefficient","level":3,"score":0.8237558007240295},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7960484027862549},{"id":"https://openalex.org/C63024428","wikidata":"https://www.wikidata.org/wiki/Q552456","display_name":"Thermoelectric effect","level":2,"score":0.6378456354141235},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.5878379344940186},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.5741602182388306},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.5204660892486572},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.4613194167613983},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4296252131462097},{"id":"https://openalex.org/C165995430","wikidata":"https://www.wikidata.org/wiki/Q891653","display_name":"Boltzmann equation","level":2,"score":0.41330787539482117},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.392446905374527},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3441239595413208},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0872054398059845},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.060742080211639404},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.4870962","doi":"https://doi.org/10.1063/1.4870962","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4870962","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:osti.gov:1386383","doi":null,"is_oa":true,"landing_page_url":"https://www.osti.gov/biblio/1386383","pdf_url":"https://www.osti.gov/servlets/purl/1386383","source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":{"id":"pmh:oai:osti.gov:1386383","doi":null,"is_oa":true,"landing_page_url":"https://www.osti.gov/biblio/1386383","pdf_url":"https://www.osti.gov/servlets/purl/1386383","source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.75,"id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[{"id":"https://openalex.org/G2056692704","display_name":"TAS::89 0227::TAS RECOVERY; NEW: RECOVERY ACT -  CENTER ON MATERIALS FOR ENERGY EFFICIENCY APPLICATIONS -- EFRC; PI - JOHN BOWERS","funder_award_id":"DESC0001009","funder_id":"https://openalex.org/F4320306084","funder_display_name":"U.S. Department of Energy"}],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2015997867.pdf","grobid_xml":"https://content.openalex.org/works/W2015997867.grobid-xml"},"referenced_works_count":49,"referenced_works":["https://openalex.org/W31761522","https://openalex.org/W1536879103","https://openalex.org/W1965938100","https://openalex.org/W1969755011","https://openalex.org/W1974790213","https://openalex.org/W1975069283","https://openalex.org/W1983782690","https://openalex.org/W1985535749","https://openalex.org/W1986448385","https://openalex.org/W1988235362","https://openalex.org/W1988982761","https://openalex.org/W2005934584","https://openalex.org/W2006583604","https://openalex.org/W2010555162","https://openalex.org/W2013195712","https://openalex.org/W2014986553","https://openalex.org/W2026877763","https://openalex.org/W2028285928","https://openalex.org/W2030086321","https://openalex.org/W2033437644","https://openalex.org/W2036938392","https://openalex.org/W2037362714","https://openalex.org/W2042096400","https://openalex.org/W2042652333","https://openalex.org/W2053348393","https://openalex.org/W2061771299","https://openalex.org/W2062235892","https://openalex.org/W2070093297","https://openalex.org/W2075937489","https://openalex.org/W2076203020","https://openalex.org/W2078338131","https://openalex.org/W2083803899","https://openalex.org/W2087572106","https://openalex.org/W2095308602","https://openalex.org/W2102615664","https://openalex.org/W2109522465","https://openalex.org/W2111288508","https://openalex.org/W2121706292","https://openalex.org/W2123988204","https://openalex.org/W2125140913","https://openalex.org/W2126203456","https://openalex.org/W2134685049","https://openalex.org/W2135175560","https://openalex.org/W2144258223","https://openalex.org/W2153317649","https://openalex.org/W2155202110","https://openalex.org/W2171344776","https://openalex.org/W2802044307","https://openalex.org/W4256261780"],"related_works":["https://openalex.org/W2037362714","https://openalex.org/W2140342139","https://openalex.org/W1983782690","https://openalex.org/W2063256895","https://openalex.org/W2045011697","https://openalex.org/W2758746240","https://openalex.org/W2545799540","https://openalex.org/W1976656914","https://openalex.org/W2066827825","https://openalex.org/W2109013173"],"abstract_inverted_index":{"The":[0,20,231],"thermoelectric":[1],"properties":[2],"of":[3,70,85,92,136,162,198,247],"gate-all-around":[4],"silicon":[5],"nanowires":[6],"(Si":[7],"NWs)":[8],"are":[9,28],"calculated":[10,206],"to":[11,30,37,89,116,141,175,237],"determine":[12,38],"the":[13,39,76,90,121,129,142,177,208],"potential":[14],"for":[15,49,75,180,207,228,251],"significant":[16,101],"power":[17,47,196,232,252],"factor":[18,48,197,233,253],"enhancement.":[19,254],"Boltzmann":[21],"transport":[22,34],"equation":[23],"and":[24,46,61,67,95,149,166,188],"relaxation":[25],"time":[26],"approximation":[27],"employed":[29],"develop":[31],"an":[32],"electron":[33],"model":[35],"used":[36],"field-effect":[40],"mobility,":[41],"electrical":[42,104],"conductivity,":[43],"Seebeck":[44,130,159,178],"coefficient,":[45],"Si":[50,78,87,108,127,139,164,168,186,214],"NWs":[51,79,165,187,215],"with":[52,106,158,216,243,271],"cross-sectional":[53,110],"areas":[54],"between":[55,146],"4":[56,59],"nm":[57,60,63,66,182,185,210,213,249],"\u00d7":[58,64,183,200,211,224],"12":[62,65],"a":[68,117,244,264],"range":[69],"gate":[71],"biases.":[72],"Electrical":[73],"conductivity":[74,105,267],"gated":[77],"was":[80,112,132,155,172,205,234],"much":[81],"higher":[82],"than":[83,134],"that":[84,135],"doped":[86,137],"due":[88,115,140],"lack":[91],"ionized":[93,147],"impurities":[94],"correspondingly":[96],"greater":[97],"carrier":[98,123],"mobility.":[99],"A":[100,194],"increase":[102,119,176,256],"in":[103,120,257],"decreasing":[107],"NW":[109],"area":[111],"also":[113,156,173,189,235,260],"observed":[114],"large":[118],"average":[122],"density.":[124],"For":[125],"all":[126],"NWs,":[128],"coefficient":[131,160,179],"lower":[133],"bulk":[138,229],"different":[143],"energy":[144],"dependence":[145],"impurity":[148],"phonon-mediated":[150],"scattering":[151],"processes.":[152],"This":[153],"decrease":[154],"confirmed":[157],"measurements":[161],"multigated":[163],"n-type":[167],"thin-films.":[169],"Quantum":[170],"confinement":[171],"found":[174,236],"<8":[181],"8":[184],"at":[190],"high":[191],"charge":[192],"densities.":[193],"maximum":[195],"6.8":[199],"10\u22123":[201],"W":[202],"m\u22121":[203],"K\u22122":[204],"6":[209,212],"typical":[217],"Si/SiO2":[218],"interface":[219],"roughness,":[220,242],"which":[221],"is":[222],"2\u20133":[223],"those":[225],"obtained":[226,270],"experimentally":[227],"Si.":[230],"greatly":[238],"depend":[239],"on":[240],"surface":[241,273],"root-mean-square":[245],"roughness":[246],"<0.8":[248],"necessary":[250],"An":[255],"ZT":[258],"may":[259],"be":[261,269],"possible":[262],"if":[263],"low":[265],"thermal":[266],"can":[268],"minimal":[272],"roughness.":[274]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}