{"id":"https://openalex.org/W2015670519","doi":"https://doi.org/10.1088/1367-2630/11/12/125013","title":"AlGaN-based laser diodes for the short-wavelength ultraviolet region","display_name":"AlGaN-based laser diodes for the short-wavelength ultraviolet region","publication_year":2009,"publication_date":"2009-12-17","ids":{"openalex":"https://openalex.org/W2015670519","doi":"https://doi.org/10.1088/1367-2630/11/12/125013","mag":"2015670519"},"language":"en","primary_location":{"id":"doi:10.1088/1367-2630/11/12/125013","doi":"https://doi.org/10.1088/1367-2630/11/12/125013","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1367-2630/11/12/125013","pdf_url":"https://iopscience.iop.org/article/10.1088/1367-2630/11/12/125013/pdf","source":{"id":"https://openalex.org/S148121101","display_name":"New Journal of Physics","issn_l":"1367-2630","issn":["1367-2630"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-scientific","cwts-core","doaj","dongbi-b","jufo-2","norway-2","oarl","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"New Journal of Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://iopscience.iop.org/article/10.1088/1367-2630/11/12/125013/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112314261","display_name":"Harumasa Yoshida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150993360","display_name":"Hamamatsu Photonics (Japan)","ror":"https://ror.org/03natb733","country_code":"JP","type":"company","lineage":["https://openalex.org/I150993360"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Harumasa Yoshida","raw_affiliation_strings":["Central Research Laboratories , Hamamatsu Photonics K.K. , 5000 Hirakuchi , Hamakita-ku , Hamamatsu 434-8601 , Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratories , Hamamatsu Photonics K.K. , 5000 Hirakuchi , Hamakita-ku , Hamamatsu 434-8601 , Japan","institution_ids":["https://openalex.org/I150993360"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014386860","display_name":"Masakazu Kuwabara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150993360","display_name":"Hamamatsu Photonics (Japan)","ror":"https://ror.org/03natb733","country_code":"JP","type":"company","lineage":["https://openalex.org/I150993360"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Masakazu Kuwabara","raw_affiliation_strings":["Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan","institution_ids":["https://openalex.org/I150993360"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113943278","display_name":"Yoji Yamashita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150993360","display_name":"Hamamatsu Photonics (Japan)","ror":"https://ror.org/03natb733","country_code":"JP","type":"company","lineage":["https://openalex.org/I150993360"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoji Yamashita","raw_affiliation_strings":["Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan","institution_ids":["https://openalex.org/I150993360"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111594133","display_name":"Yasufumi Takagi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150993360","display_name":"Hamamatsu Photonics (Japan)","ror":"https://ror.org/03natb733","country_code":"JP","type":"company","lineage":["https://openalex.org/I150993360"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasufumi Takagi","raw_affiliation_strings":["Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan","institution_ids":["https://openalex.org/I150993360"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108395273","display_name":"Kazuya Uchiyama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150993360","display_name":"Hamamatsu Photonics (Japan)","ror":"https://ror.org/03natb733","country_code":"JP","type":"company","lineage":["https://openalex.org/I150993360"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuya Uchiyama","raw_affiliation_strings":["Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan","institution_ids":["https://openalex.org/I150993360"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108913807","display_name":"Hirofumi Kan","orcid":"https://orcid.org/0000-0002-8509-5226","observed_orcids":["https://orcid.org/0000-0002-8509-5226"]},"institutions":[{"id":"https://openalex.org/I150993360","display_name":"Hamamatsu Photonics (Japan)","ror":"https://ror.org/03natb733","country_code":"JP","type":"company","lineage":["https://openalex.org/I150993360"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirofumi Kan","raw_affiliation_strings":["Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan","institution_ids":["https://openalex.org/I150993360"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5014386860"],"corresponding_institution_ids":["https://openalex.org/I150993360"],"apc_list":{"value":2610,"currency":"USD","value_usd":2610},"apc_paid":{"value":2610,"currency":"USD","value_usd":2610},"fwci":2.666,"has_fulltext":true,"cited_by_count":69,"citation_normalized_percentile":{"value":0.9022861,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"11","issue":"12","first_page":"125013","last_page":"125013"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ultraviolet-laser-diodes","display_name":"ultraviolet laser diodes","score":0.875},{"id":"https://openalex.org/keywords/multiple-quantum-wells","display_name":"multiple quantum wells","score":0.7009999752044678},{"id":"https://openalex.org/keywords/algan-gan","display_name":"AlGaN/GaN","score":0.8650000095367432},{"id":"https://openalex.org/keywords/low-dislocation-density","display_name":"low dislocation density","score":0.7710000276565552},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.8140000104904175},{"id":"https://openalex.org/keywords/room-temperature-operation","display_name":"room-temperature operation","score":0.7730000019073486},{"id":"https://openalex.org/keywords/threshold-current-density","display_name":"threshold current density","score":0.796999990940094},{"id":"https://openalex.org/keywords/modal-gain","display_name":"modal gain","score":0.6850000023841858},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"temperature coefficient","score":0.5590000152587891},{"id":"https://openalex.org/keywords/characteristic-temperature","display_name":"characteristic temperature","score":0.4440000057220459}],"concepts":[{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7503739595413208},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7473392486572266},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.7117326855659485},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7002918720245361},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.6093325614929199},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.5119665861129761},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.5029286742210388},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.4804686903953552},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4116702079772949},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3866316080093384},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16772139072418213},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/1367-2630/11/12/125013","doi":"https://doi.org/10.1088/1367-2630/11/12/125013","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1367-2630/11/12/125013","pdf_url":"https://iopscience.iop.org/article/10.1088/1367-2630/11/12/125013/pdf","source":{"id":"https://openalex.org/S148121101","display_name":"New Journal of Physics","issn_l":"1367-2630","issn":["1367-2630"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-scientific","cwts-core","doaj","dongbi-b","jufo-2","norway-2","oarl","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"New Journal of Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1088/1367-2630/11/12/125013","doi":"https://doi.org/10.1088/1367-2630/11/12/125013","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1367-2630/11/12/125013","pdf_url":"https://iopscience.iop.org/article/10.1088/1367-2630/11/12/125013/pdf","source":{"id":"https://openalex.org/S148121101","display_name":"New Journal of Physics","issn_l":"1367-2630","issn":["1367-2630"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-scientific","cwts-core","doaj","dongbi-b","jufo-2","norway-2","oarl","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"New Journal of Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2015670519.pdf","grobid_xml":"https://content.openalex.org/works/W2015670519.grobid-xml"},"referenced_works_count":32,"referenced_works":["https://openalex.org/W1536508252","https://openalex.org/W1566923455","https://openalex.org/W1967269804","https://openalex.org/W1972172013","https://openalex.org/W1983044743","https://openalex.org/W1987606221","https://openalex.org/W1987965666","https://openalex.org/W1991620319","https://openalex.org/W1994684381","https://openalex.org/W2005012909","https://openalex.org/W2010828428","https://openalex.org/W2015895139","https://openalex.org/W2020409009","https://openalex.org/W2021246537","https://openalex.org/W2021583619","https://openalex.org/W2024242369","https://openalex.org/W2033363937","https://openalex.org/W2040694310","https://openalex.org/W2047939155","https://openalex.org/W2055933050","https://openalex.org/W2064566873","https://openalex.org/W2070987128","https://openalex.org/W2072666302","https://openalex.org/W2074179481","https://openalex.org/W2074249148","https://openalex.org/W2074623495","https://openalex.org/W2076613934","https://openalex.org/W2082469932","https://openalex.org/W2092762836","https://openalex.org/W2094941253","https://openalex.org/W2523199255","https://openalex.org/W3174535618"],"related_works":["https://openalex.org/W2021791260","https://openalex.org/W1989773181","https://openalex.org/W2072666302","https://openalex.org/W2077686933","https://openalex.org/W3174535618","https://openalex.org/W1983044743","https://openalex.org/W2028453128","https://openalex.org/W1987606221","https://openalex.org/W2146704194","https://openalex.org/W2132947400"],"abstract_inverted_index":{"We":[0,19,165],"have":[1,20,51,113,166],"demonstrated":[2],"the":[3,16,38,55,132,137,142,147,169,203,211,226],"room-temperature":[4],"operation":[5],"of":[6,30,90,111,189,194,229],"GaN/AlGaN":[7,45,71,138,204],"and":[8,32,46,62,83,104,146,159,180],"indium-free":[9],"AlGaN":[10,24,47,117,218],"multiple-quantum-well":[11],"(MQW)":[12],"laser":[13,49,73,119,140,206,213,230],"diodes":[14,50,74,120,214,231],"under":[15],"pulsed-current":[17],"mode.":[18],"successfully":[21],"grown":[22,215],"low-dislocation-density":[23,56],"films":[25,219],"with":[26,187],"AlN":[27],"mole":[28],"fractions":[29],"20":[31],"30%":[33],"on":[34,54,216],"sapphire":[35],"substrates":[36],"using":[37],"hetero-facet-controlled":[39],"epitaxial":[40],"lateral":[41],"overgrowth":[42],"(hetero-FACELO)":[43],"method.":[44],"MQW":[48,72,118,139,205],"been":[52,114],"fabricated":[53],"Al":[57,63],"0.2":[58],"Ga":[59,65],"0.8":[60],"N":[61,67],"0.3":[64],"0.7":[66],"films,":[68],"respectively.":[69,164],"The":[70,116,208],"lased":[75,121],"at":[76,122],"a":[77,105,123],"peak":[78,124],"wavelength":[79,125],"ranging":[80],"between":[81],"359.6":[82],"354.4":[84],"nm.":[85],"A":[86,191],"threshold":[87],"current":[88],"density":[89],"8":[91],"kA":[92,157],"cm":[93,156,161],"\u22122":[94],",":[95,163],"an":[96,183],"output":[97],"power":[98],"as":[99,101],"high":[100],"80":[102],"mW":[103],"differential":[106],"external":[107],"quantum":[108],"efficiency":[109],"(DEQE)":[110],"17.4%":[112],"achieved.":[115],"down":[126],"to":[127,153,177],"336.0":[128],"nm":[129,196],"far":[130],"beyond":[131],"GaN":[133],"band":[134],"gap.":[135],"For":[136],"diodes,":[141],"modal":[143],"gain":[144],"coefficient":[145,193],"optical":[148],"internal":[149],"loss":[150],"are":[151],"estimated":[152],"be":[154,223],"4.7\u00b10.6":[155],"\u22121":[158,162,198],"10.6\u00b12.7":[160],"observed":[167],"that":[168],"characteristic":[170],"temperature":[171,192],"T":[172],"0":[173],"ranges":[174],"from":[175],"132":[176],"89":[178],"K":[179,197],"DEQE":[181],"shows":[182],"almost":[184],"stable":[185],"tendency":[186],"increase":[188],"temperature.":[190],"0.049":[195],"is":[199],"also":[200],"found":[201],"for":[202,210,225],"diode.":[207],"results":[209],"AlGaN-based":[212],"high-quality":[217],"presented":[220],"here":[221],"will":[222],"essential":[224],"future":[227],"development":[228],"emitting":[232],"much":[233],"shorter":[234],"wavelengths.":[235]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":6},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":7},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":6},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":7},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}