{"id":"https://openalex.org/W2015587878","doi":"https://doi.org/10.1016/j.cap.2014.09.027","title":"Electrical behavior of amorphous indium\u2013gallium\u2013zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer","display_name":"Electrical behavior of amorphous indium\u2013gallium\u2013zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer","publication_year":2014,"publication_date":"2014-10-16","ids":{"openalex":"https://openalex.org/W2015587878","doi":"https://doi.org/10.1016/j.cap.2014.09.027","mag":"2015587878"},"language":"en","primary_location":{"id":"doi:10.1016/j.cap.2014.09.027","doi":"https://doi.org/10.1016/j.cap.2014.09.027","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.cap.2014.09.027","pdf_url":null,"source":{"id":"https://openalex.org/S159232998","display_name":"Current Applied Physics","issn_l":"1567-1739","issn":["1567-1739","1878-1675"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","kci-registered","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Current Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020566261","display_name":"Heewang Yang","orcid":"https://orcid.org/0000-0002-3971-1438","observed_orcids":["https://orcid.org/0000-0002-3971-1438"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Heewang Yang","raw_affiliation_strings":["Division of Materials Science and Engineering,Hanyang University,Seoul 133-791,South Korea"],"raw_orcid":"https://orcid.org/0000-0002-3971-1438","affiliations":[{"raw_affiliation_string":"Division of Materials Science and Engineering,Hanyang University,Seoul 133-791,South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087837911","display_name":"Byungsu Cho","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405272572","display_name":"Samsung Display (South Korea)","ror":"https://ror.org/04c1a3283","country_code":"KR","type":"company","lineage":["https://openalex.org/I4405272572"]},{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byungsu Cho","raw_affiliation_strings":["Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea","Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea","institution_ids":["https://openalex.org/I4575257"]},{"raw_affiliation_string":"Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405272572"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Joohyun Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joohyun Park","raw_affiliation_strings":["Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112328179","display_name":"Seokyoon Shin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seokyoon Shin","raw_affiliation_strings":["Division of Materials Science and Engineering,Hanyang University,Seoul 133-791,South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Materials Science and Engineering,Hanyang University,Seoul 133-791,South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076269409","display_name":"Giyul Ham","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Giyul Ham","raw_affiliation_strings":["Division of Materials Science and Engineering,Hanyang University,Seoul 133-791,South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Materials Science and Engineering,Hanyang University,Seoul 133-791,South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047449616","display_name":"Hyungtak Seo","orcid":"https://orcid.org/0000-0001-9485-6405","observed_orcids":["https://orcid.org/0000-0001-9485-6405","https://orcid.org/0000-0002-1180-8289"]},"institutions":[{"id":"https://openalex.org/I57664883","display_name":"Ajou University","ror":"https://ror.org/03tzb2h73","country_code":"KR","type":"education","lineage":["https://openalex.org/I57664883"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyungtak Seo","raw_affiliation_strings":["Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 443-739, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 443-739, South Korea","institution_ids":["https://openalex.org/I57664883"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013519625","display_name":"Hyeongtag Jeon","orcid":"https://orcid.org/0000-0003-2502-7413","observed_orcids":["https://orcid.org/0000-0003-2502-7413"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyeongtag Jeon","raw_affiliation_strings":["Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2640,"currency":"USD","value_usd":2640},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"14","issue":"12","first_page":"1767","last_page":"1770"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-indium-gallium-zinc-oxide","display_name":"amorphous indium gallium zinc oxide","score":0.9490000009536743},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.9739999771118164},{"id":"https://openalex.org/keywords/gold-nanoparticles","display_name":"gold nanoparticles","score":0.9940000176429749},{"id":"https://openalex.org/keywords/nanoparticle-incorporation","display_name":"nanoparticle incorporation","score":0.7049999833106995},{"id":"https://openalex.org/keywords/channel-layer","display_name":"channel layer","score":0.878000020980835},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.9990000128746033},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.8159999847412109},{"id":"https://openalex.org/keywords/trap-sites","display_name":"trap sites","score":0.9629999995231628},{"id":"https://openalex.org/keywords/electrical-stability","display_name":"electrical stability","score":0.8040000200271606},{"id":"https://openalex.org/keywords/threshold-voltage-tuning","display_name":"threshold voltage control","score":0.6539999842643738}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7678032517433167},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.7610386610031128},{"id":"https://openalex.org/C155672457","wikidata":"https://www.wikidata.org/wiki/Q61231","display_name":"Nanoparticle","level":2,"score":0.6679929494857788},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6351307034492493},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.608730137348175},{"id":"https://openalex.org/C535196362","wikidata":"https://www.wikidata.org/wiki/Q758","display_name":"Zinc","level":2,"score":0.6022114753723145},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5938802361488342},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.5113713145256042},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47681042551994324},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.47007638216018677},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.45777982473373413},{"id":"https://openalex.org/C162743726","wikidata":"https://www.wikidata.org/wiki/Q7115642","display_name":"Oxide thin-film transistor","level":4,"score":0.43841278553009033},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.147115558385849},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.11073341965675354},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0947224497795105},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.05497363209724426},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.05142882466316223},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.cap.2014.09.027","doi":"https://doi.org/10.1016/j.cap.2014.09.027","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.cap.2014.09.027","pdf_url":null,"source":{"id":"https://openalex.org/S159232998","display_name":"Current Applied Physics","issn_l":"1567-1739","issn":["1567-1739","1878-1675"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","kci-registered","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Current Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1965149785","https://openalex.org/W1984469341","https://openalex.org/W1988163838","https://openalex.org/W1989649360","https://openalex.org/W1990798163","https://openalex.org/W1994277498","https://openalex.org/W1999589524","https://openalex.org/W2038313135","https://openalex.org/W2040179822","https://openalex.org/W2066592833","https://openalex.org/W2068767610","https://openalex.org/W2075726367","https://openalex.org/W2077228161","https://openalex.org/W2117386062"],"related_works":["https://openalex.org/W1984469341","https://openalex.org/W2060163114","https://openalex.org/W2053516340","https://openalex.org/W2794457188","https://openalex.org/W1978880159","https://openalex.org/W1997359473","https://openalex.org/W1945340486","https://openalex.org/W3106600609","https://openalex.org/W1969843735","https://openalex.org/W2754652317"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}