{"id":"https://openalex.org/W2015580435","doi":"https://doi.org/10.1049/el:19860398","title":"Integrated AlGaAs two-beam LD-PD array fabricated by reactive ion beam etching","display_name":"Integrated AlGaAs two-beam LD-PD array fabricated by reactive ion beam etching","publication_year":1986,"publication_date":"1986-05-22","ids":{"openalex":"https://openalex.org/W2015580435","doi":"https://doi.org/10.1049/el:19860398","mag":"2015580435"},"language":"en","primary_location":{"id":"doi:10.1049/el:19860398","doi":"https://doi.org/10.1049/el:19860398","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19860398","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113619467","display_name":"M. Uchida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Uchida","raw_affiliation_strings":["Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076781911","display_name":"Shohei Matsumoto","orcid":"https://orcid.org/0000-0001-7544-6291","observed_orcids":["https://orcid.org/0000-0001-7544-6291"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Matsumoto","raw_affiliation_strings":["Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","NEC (Japan), Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC (Japan), Tokyo, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087417900","display_name":"K. Asakawa","orcid":"https://orcid.org/0009-0009-3582-5233","observed_orcids":["https://orcid.org/0009-0009-3582-5233"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Asakawa","raw_affiliation_strings":["Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","NEC (Japan), Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC (Japan), Tokyo, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045123832","display_name":"Hideo Kawano","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Kawano","raw_affiliation_strings":["Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","NEC (Japan), Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Opto-Electronics Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, WKanagawa 213, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC (Japan), Tokyo, Japan","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I118347220"],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":2.1037,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.85256299,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"22","issue":"11","first_page":"585","last_page":"587"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.009399999864399433,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.0017000000225380063,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algaas-laser-diodes","display_name":"AlGaAs laser diodes","score":0.8569999933242798},{"id":"https://openalex.org/keywords/photodiode-array","display_name":"photodiode array","score":0.8309999704360962},{"id":"https://openalex.org/keywords/reactive-ion-beam-etching","display_name":"reactive ion beam etching","score":0.9359999895095825},{"id":"https://openalex.org/keywords/monolithic-integration","display_name":"monolithic integration","score":0.8790000081062317},{"id":"https://openalex.org/keywords/threshold-current","display_name":"threshold current","score":0.7549999952316284},{"id":"https://openalex.org/keywords/external-quantum-efficiency","display_name":"external quantum efficiency","score":0.9980000257492065},{"id":"https://openalex.org/keywords/crosstalk-reduction","display_name":"crosstalk reduction","score":0.9649999737739563},{"id":"https://openalex.org/keywords/optical-barrier","display_name":"optical barrier","score":0.8270000219345093},{"id":"https://openalex.org/keywords/integrated-optoelectronics","display_name":"integrated optoelectronics","score":0.5619999766349792}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7474305629730225},{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.730541467666626},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6872758865356445},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6423215866088867},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.5768104195594788},{"id":"https://openalex.org/C50774322","wikidata":"https://www.wikidata.org/wiki/Q644248","display_name":"Ion beam","level":3,"score":0.5288936495780945},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.5212433934211731},{"id":"https://openalex.org/C168834538","wikidata":"https://www.wikidata.org/wiki/Q3705329","display_name":"Beam (structure)","level":2,"score":0.5093647241592407},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.5048044919967651},{"id":"https://openalex.org/C161866238","wikidata":"https://www.wikidata.org/wiki/Q258563","display_name":"Focused ion beam","level":3,"score":0.4250008165836334},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.41027188301086426},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.3351143002510071},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14201059937477112},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.11965864896774292},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08294659852981567},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1049/el:19860398","doi":"https://doi.org/10.1049/el:19860398","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19860398","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2017259311","https://openalex.org/W2019456726","https://openalex.org/W2032517699","https://openalex.org/W2060905570","https://openalex.org/W2088563191","https://openalex.org/W4245550470"],"related_works":["https://openalex.org/W2079512362","https://openalex.org/W2014662324","https://openalex.org/W2000419504","https://openalex.org/W2143965566","https://openalex.org/W2168905303","https://openalex.org/W2054573556","https://openalex.org/W2017848943","https://openalex.org/W2004615377","https://openalex.org/W2052104530","https://openalex.org/W1990720133"],"abstract_inverted_index":{"Monolitically":[0],"integrated":[1],"AlGaAs":[2,87],"two-beam":[3],"laser":[4],"diode":[5],"(LD)-":[6],"photodiode":[7],"(PD)":[8],"arrays":[9],"are":[10],"described.":[11],"LDs":[12,25],"and":[13,37],"PDs":[14],"have":[15],"etched":[16],"facets":[17],"fabricated":[18,93],"by":[19,71,85],"reactive":[20],"ion":[21],"beam":[22,57],"etching":[23],"(RIBE).":[24],"in":[26],"the":[27,66,75],"array":[28],"exhibit":[29],"threshold":[30],"currents":[31],"as":[32,34],"low":[33],"18":[35],"mA":[36],"external":[38],"quantum":[39],"efficiencies":[40],"of":[41,54],"more":[42,51],"than":[43,52,82],"30%":[44],"per":[45],"facet.":[46],"A":[47],"PD":[48],"can":[49],"detect":[50],"20%":[53],"a":[55],"light":[56],"emitted":[58],"from":[59],"an":[60,86],"LD":[61],"facing":[62],"it.":[63],"Crosstalk":[64],"between":[65,94],"two":[67],"LD-PD":[68],"columns":[69],"(separated":[70],"50":[72],"\u03bcm),":[73],"on":[74],"other":[76],"hand,":[77],"is":[78],"suppressed":[79],"to":[80],"less":[81],"\u221220":[83],"dB":[84],"optical":[88],"barrier":[89],"(5":[90],"\u03bcm":[91],"thick)":[92],"them.":[95]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}