{"id":"https://openalex.org/W2015469459","doi":"https://doi.org/10.1117/12.916952","title":"SADP for BEOL using chemical slimming with resist mandrel for beyond 22nm nodes","display_name":"SADP for BEOL using chemical slimming with resist mandrel for beyond 22nm nodes","publication_year":2012,"publication_date":"2012-03-08","ids":{"openalex":"https://openalex.org/W2015469459","doi":"https://doi.org/10.1117/12.916952","mag":"2015469459"},"language":"en","primary_location":{"id":"doi:10.1117/12.916952","doi":"https://doi.org/10.1117/12.916952","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.916952","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027658459","display_name":"Linus Jang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Linus Jang","raw_affiliation_strings":["GLOBALFOUNDRIES Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Inc. (United States)","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085214620","display_name":"Sudharshanan Raghunathan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sudhar Raghunathan","raw_affiliation_strings":["GLOBALFOUNDRIES Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Inc. (United States)","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076293916","display_name":"E. Todd Ryan","orcid":"https://orcid.org/0000-0001-6338-859X","observed_orcids":["https://orcid.org/0000-0001-6338-859X"]},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. Todd Ryan","raw_affiliation_strings":["GLOBALFOUNDRIES Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Inc. (United States)","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111832882","display_name":"Jongwook Kye","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jongwook Kye","raw_affiliation_strings":["GLOBALFOUNDRIES Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Inc. (United States)","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040932462","display_name":"Harry Levinson","orcid":"https://orcid.org/0000-0001-7188-1536","observed_orcids":["https://orcid.org/0000-0001-7188-1536"]},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Harry J. Levinson","raw_affiliation_strings":["GLOBALFOUNDRIES Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Inc. (United States)","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103740064","display_name":"Shannon Dunn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shannon Dunn","raw_affiliation_strings":["Tokyo Electron America, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Electron America, Inc. (United States)","institution_ids":["https://openalex.org/I114132059"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072962524","display_name":"David R. Hetzer","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"David Hetzer","raw_affiliation_strings":["Tokyo Electron Technology Ctr., America, LLC (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Electron Technology Ctr., America, LLC (United States)","institution_ids":["https://openalex.org/I114132059"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080778643","display_name":"Shinichiro Kawakami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinichiro Kawakami","raw_affiliation_strings":["Tokyo Electron Technology Ctr., America, LLC (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Electron Technology Ctr., America, LLC (United States)","institution_ids":["https://openalex.org/I114132059"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063005173","display_name":"Lior Huli","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114132059","display_name":"Tokyo Electron (Japan)","ror":"https://ror.org/05gd76j39","country_code":"JP","type":"company","lineage":["https://openalex.org/I114132059"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Lior Huli","raw_affiliation_strings":["Tokyo Electron Technology Ctr., America, LLC (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tokyo Electron Technology Ctr., America, LLC (United States)","institution_ids":["https://openalex.org/I114132059"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.0314,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.85577473,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"8325","issue":null,"first_page":"83250D","last_page":"83250D"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12224","display_name":"Nanofabrication and Lithography Techniques","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11471","display_name":"Block Copolymer Self-Assembly","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/self-aligned-double-patterning","display_name":"self-aligned double patterning","score":0.9940000176429749},{"id":"https://openalex.org/keywords/critical-dimension-uniformity","display_name":"critical dimension uniformity","score":0.8930000066757202},{"id":"https://openalex.org/keywords/defectivity","display_name":"defectivity","score":0.8450000286102295}],"concepts":[{"id":"https://openalex.org/C177409738","wikidata":"https://www.wikidata.org/wiki/Q1917460","display_name":"Multiple patterning","level":4,"score":0.9463785886764526},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.83400559425354},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.7378129959106445},{"id":"https://openalex.org/C162996421","wikidata":"https://www.wikidata.org/wiki/Q371965","display_name":"Extreme ultraviolet lithography","level":2,"score":0.7264729738235474},{"id":"https://openalex.org/C2777918083","wikidata":"https://www.wikidata.org/wiki/Q136706","display_name":"Mandrel","level":2,"score":0.6719525456428528},{"id":"https://openalex.org/C207789793","wikidata":"https://www.wikidata.org/wiki/Q3028070","display_name":"Critical dimension","level":2,"score":0.6707702279090881},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6317607164382935},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.5721350312232971},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5532497763633728},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4575355350971222},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.4362823963165283},{"id":"https://openalex.org/C66018809","wikidata":"https://www.wikidata.org/wiki/Q1570432","display_name":"Semiconductor device fabrication","level":3,"score":0.4339353144168854},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.4012450575828552},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3097148835659027},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.10360398888587952},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10096496343612671},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.916952","doi":"https://doi.org/10.1117/12.916952","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.916952","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W2017062672"],"related_works":["https://openalex.org/W2072373671","https://openalex.org/W2084414713","https://openalex.org/W4292829437","https://openalex.org/W2075959051","https://openalex.org/W2016423568","https://openalex.org/W4292829427","https://openalex.org/W2057845836","https://openalex.org/W2292498009","https://openalex.org/W2147580868","https://openalex.org/W2047796516"],"abstract_inverted_index":{"The":[0,50,188],"fundamental":[1],"limits":[2],"of":[3,132,135,191,204],"optical":[4],"lithography":[5,149,155],"have":[6,31,83,158,181],"driven":[7],"semiconductor":[8,38],"processing":[9,39,161],"research":[10],"to":[11,153,166,199,216],"push":[12],"the":[13,133,148,154,160,197],"envelope.":[14],"Double":[15],"patterning":[16,29],"(DP)":[17],"techniques":[18,54],"including":[19],"litho-etch":[20,21],"(LELE),":[22],"litho-litho":[23],"etch":[24,171,176],"(LLE),":[25],"and":[26,57,117,127,170,174,220],"self-aligned":[27],"double":[28],"(SADP)":[30],"become":[32],"standard":[33],"vernacular":[34],"for":[35,46,76,96,107,118,142,162,172,178,223],"near":[36],"term":[37],"as":[40,139,194,196],"EUV":[41],"is":[42,79,137,212],"not":[43,80],"yet":[44],"ready":[45],"high":[47],"volume":[48],"production.":[49],"challenge,":[51],"even":[52,70],"with":[53],"like":[55],"LLE":[56,100],"SADP,":[58],"remains":[59],"that":[60,89,208],"printing":[61],"small":[62,71],"lines":[63,72,95],"on":[64,73],"tight":[65],"pitches":[66,75],"(for":[67],"LLE)":[68],"or":[69,99],"relaxed":[74],"mandrel/spacer":[77],"combinations":[78],"trivial.":[81],"We":[82,121,180],"demonstrated":[84,182],"a":[85,201,213],"track-based":[86],"slimming":[87,136,211],"technique":[88],"can":[90],"produce":[91],"sub-25":[92],"nm":[93,185,226],"resist":[94],"either":[97],"SADP":[98,173],"DP":[101],"processes.":[102],"Our":[103],"work":[104],"includes":[105],"results":[106],"varying":[108],"shrink":[109,205],"amounts":[110,206],"at":[111,147],"different":[112],"target":[113,218],"critical":[114,138],"dimensions":[115],"(CD)":[116],"multiple":[119],"pitches.":[120],"also":[122],"investigated":[123],"CD":[124,219],"uniformity":[125],"(CDU)":[126],"defectivity.":[128],"In":[129,151],"particular,":[130],"optimization":[131],"amount":[134],"it":[140],"allows":[141],"much":[143],"greater":[144],"process":[145,192],"latitude":[146],"step.":[150],"addition":[152],"work,":[156],"we":[157],"continued":[159],"both":[163],"integration":[164],"schemes":[165],"include":[167],"oxide":[168],"deposition":[169],"through":[175],"performance":[177],"DP.":[179],"sub":[183,224],"45":[184],"pitch":[186,221],"structures.":[187],"wide":[189],"variety":[190],"uses,":[193],"well":[195],"ability":[198],"achieve":[200,217],"large":[202],"range":[203],"shows":[207],"track":[209],"based":[210],"viable":[214],"solution":[215],"values":[222],"22":[225],"technology":[227],"node.":[228]},"counts_by_year":[{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":1}],"updated_date":"2026-09-25T08:18:29.962427","created_date":"2016-06-24T00:00:00"}
