{"id":"https://openalex.org/W2015396409","doi":"https://doi.org/10.1143/jjap.39.l858","title":"Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs (311)B Substrate under High-Speed Modulation","display_name":"Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs (311)B Substrate under High-Speed Modulation","publication_year":2000,"publication_date":"2000-08-01","ids":{"openalex":"https://openalex.org/W2015396409","doi":"https://doi.org/10.1143/jjap.39.l858","mag":"2015396409"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.39.l858","doi":"https://doi.org/10.1143/jjap.39.l858","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.39.l858","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.L858/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.L858/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101041961","display_name":"Masakazu Arai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masakazu Arai","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011251816","display_name":"Nobuhiko Nishiyama","orcid":"https://orcid.org/0000-0001-8288-6690","observed_orcids":["https://orcid.org/0000-0001-8288-6690"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Nobuhiko Nishiyama","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085575553","display_name":"Satoshi Shinada","orcid":"https://orcid.org/0000-0003-0576-060X","observed_orcids":["https://orcid.org/0000-0003-0576-060X"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoshi Shinada","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013703136","display_name":"Akihiro Matsutani","orcid":"https://orcid.org/0000-0003-4073-7894","observed_orcids":["https://orcid.org/0000-0003-4073-7894"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akihiro Matsutani","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035060094","display_name":"Fumio Koyama","orcid":"https://orcid.org/0000-0001-7422-9391","observed_orcids":["https://orcid.org/0000-0001-7422-9391"]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Fumio Koyama","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036784659","display_name":"Kenichi Iga","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698","https://openalex.org/I4400009020"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenichi Iga","raw_affiliation_strings":["Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan","institution_ids":["https://openalex.org/I114531698"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I114531698"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":1.2393,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.79307376,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"39","issue":"8B","first_page":"L858","last_page":"L858"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.0013000000035390258,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/vertical-cavity-surface-emitting-lasers","display_name":"vertical-cavity surface-emitting lasers","score":0.9520000219345093},{"id":"https://openalex.org/keywords/ingaas-quantum-wells","display_name":"InGaAs quantum wells","score":0.8769999742507935},{"id":"https://openalex.org/keywords/gaas-311-b-substrate","display_name":"GaAs (311)B substrate","score":0.9760000109672546},{"id":"https://openalex.org/keywords/high-speed-modulation","display_name":"high-speed modulation","score":0.777999997138977},{"id":"https://openalex.org/keywords/relaxation-oscillations","display_name":"relaxation oscillations","score":0.9160000085830688},{"id":"https://openalex.org/keywords/strained-quantum-wells","display_name":"strained quantum wells","score":0.9269999861717224},{"id":"https://openalex.org/keywords/oxide-thin-films","display_name":"oxide thin films","score":0.8420000076293945}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7309107780456543},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.6673678755760193},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6155975461006165},{"id":"https://openalex.org/C106246969","wikidata":"https://www.wikidata.org/wiki/Q2009618","display_name":"Vertical-cavity surface-emitting laser","level":3,"score":0.544255256652832},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5346115827560425},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.5025396347045898},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.4961629807949066},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1444915533065796},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13540279865264893},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1143/jjap.39.l858","doi":"https://doi.org/10.1143/jjap.39.l858","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.39.l858","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.L858/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:irdb.nii.ac.jp:00897:0003921954","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100565988","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Jpn. J. Appl. Phys.","raw_type":"journal article"},{"id":"pmh:oai:t2r2.star.titech.ac.jp:50047204","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100565988","pdf_url":null,"source":{"id":"https://openalex.org/S4377196385","display_name":"Tokyo Tech Research Repository (Tokyo Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I114531698","host_organization_name":"Tokyo Institute of Technology","host_organization_lineage":["https://openalex.org/I114531698"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"}],"best_oa_location":{"id":"doi:10.1143/jjap.39.l858","doi":"https://doi.org/10.1143/jjap.39.l858","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.39.l858","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.39.L858/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2015396409.pdf","grobid_xml":"https://content.openalex.org/works/W2015396409.grobid-xml"},"referenced_works_count":21,"referenced_works":["https://openalex.org/W1976550805","https://openalex.org/W1987440303","https://openalex.org/W2006593816","https://openalex.org/W2020688246","https://openalex.org/W2023508986","https://openalex.org/W2041513164","https://openalex.org/W2050470567","https://openalex.org/W2051026390","https://openalex.org/W2080351658","https://openalex.org/W2094001320","https://openalex.org/W2094140124","https://openalex.org/W2099964412","https://openalex.org/W2104390568","https://openalex.org/W2125401585","https://openalex.org/W2129965815","https://openalex.org/W2135979885","https://openalex.org/W2140261254","https://openalex.org/W2147492017","https://openalex.org/W2159703551","https://openalex.org/W2540897710","https://openalex.org/W2595493692"],"related_works":["https://openalex.org/W2138322896","https://openalex.org/W2140261254","https://openalex.org/W2121538626","https://openalex.org/W1573519039","https://openalex.org/W2149098419","https://openalex.org/W2091651587","https://openalex.org/W2160323699","https://openalex.org/W2080351658","https://openalex.org/W2007382794","https://openalex.org/W2051026390"],"abstract_inverted_index":{"We":[0,47],"have":[1],"demonstrated":[2],"a":[3,15,23,77,111],"dynamically":[4],"stable":[5,24,96],"polarization":[6,27,38,99],"mode":[7,61],"GaInAs/GaAs":[8,117],"vertical-cavity":[9],"surface-emitting":[10],"laser":[11],"(VCSEL)":[12],"grown":[13],"on":[14,110],"GaAs":[16],"(311)B":[17,112],"substrate.":[18],"The":[19],"fabricated":[20],"device":[21],"exhibited":[22],"and":[25,30,97,120],"single":[26,98],"under":[28],"DC":[29,34],"high-speed":[31],"modulation.":[32,54],"Under":[33],"operation,":[35],"the":[36,49,59,66,70,88,106,121],"orthogonal":[37,60],"suppression":[39],"ratio":[40],"(OPSR)":[41],"was":[42,56,62,90,126],"larger":[43],"than":[44,92],"30":[45],"dB.":[46,75,94],"measured":[48],"time-resolved":[50],"OPSR":[51,89],"using":[52],"square-wave":[53],"It":[55],"found":[57],"that":[58],"suppressed":[63],"even":[64],"for":[65],"first":[67],"peak":[68],"of":[69],"relaxation":[71],"oscillation":[72],"with":[73],"OPSR>17":[74],"In":[76],"5":[78],"Gbps":[79],"non-return-to-zero":[80],"(NRZ)":[81],"pseudo-random":[82],"bit":[83],"sequence":[84],"(PRBS)":[85],"modulation":[86],"experiment,":[87],"greater":[91],"27":[93],"These":[95],"characteristics":[100],"were":[101],"due":[102],"not":[103],"only":[104],"to":[105],"anisotropic":[107],"optical":[108],"gain":[109],"substrate,":[113],"but":[114],"also":[115],"strained":[116],"quantum":[118],"wells":[119],"thin":[122],"oxide":[123],"layer":[124],"which":[125],"employed":[127],"in":[128],"this":[129],"experiment.":[130]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}