{"id":"https://openalex.org/W2015250707","doi":"https://doi.org/10.1143/jjap.23.179","title":"Structure Change of Microcrystalline Silicon Films in Deposition Process","display_name":"Structure Change of Microcrystalline Silicon Films in Deposition Process","publication_year":1984,"publication_date":"1984-02-01","ids":{"openalex":"https://openalex.org/W2015250707","doi":"https://doi.org/10.1143/jjap.23.179","mag":"2015250707"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.23.179","doi":"https://doi.org/10.1143/jjap.23.179","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.23.179","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066650210","display_name":"Takeshi Imura","orcid":"https://orcid.org/0000-0002-6762-4980","observed_orcids":["https://orcid.org/0000-0002-6762-4980"]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takeshi Imura","raw_affiliation_strings":["Faculty of Engineering, Osaka University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Osaka University","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112070785","display_name":"Hiroshi Kaya","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hiroshi Kaya","raw_affiliation_strings":["Central Research Laboratory, TOA Nenryo Co. Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, TOA Nenryo Co. Ltd","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003559010","display_name":"Hitoshi Terauchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hitoshi Terauchi","raw_affiliation_strings":["Faculty of Engineering, Osaka University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Osaka University","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084084698","display_name":"Hideki Kiyono","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideki Kiyono","raw_affiliation_strings":["Faculty of Engineering, Osaka University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Osaka University","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110132944","display_name":"Akio Hiraki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akio Hiraki","raw_affiliation_strings":["Faculty of Engineering, Osaka University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Osaka University","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109148377","display_name":"Masaki Ichihara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaki Ichihara","raw_affiliation_strings":["Institute for Solid State Physics, The University of Tokyo"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Solid State Physics, The University of Tokyo","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":5.1775,"has_fulltext":false,"cited_by_count":44,"citation_normalized_percentile":{"value":0.94896678,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"23","issue":"2R","first_page":"179","last_page":"179"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.760699987411499,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.760699987411499,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.1128000020980835,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.060100000351667404,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/microcrystalline-silicon","display_name":"microcrystalline silicon","score":0.9020000100135803},{"id":"https://openalex.org/keywords/amorphous-silicon","display_name":"amorphous silicon","score":0.6539999842643738},{"id":"https://openalex.org/keywords/film-thickness-dependence","display_name":"film thickness dependence","score":0.7129999995231628},{"id":"https://openalex.org/keywords/reactive-sputtering","display_name":"reactive sputtering","score":0.7950000166893005},{"id":"https://openalex.org/keywords/glow-discharge-deposition","display_name":"glow discharge deposition","score":0.972000002861023},{"id":"https://openalex.org/keywords/si-h-stretching-vibrations","display_name":"Si-H stretching vibrations","score":0.8569999933242798},{"id":"https://openalex.org/keywords/infrared-absorption","display_name":"infrared absorption","score":0.4269999861717224},{"id":"https://openalex.org/keywords/thin-film-structure","display_name":"thin film structure","score":0.4749999940395355}],"concepts":[{"id":"https://openalex.org/C201370411","wikidata":"https://www.wikidata.org/wiki/Q388283","display_name":"Microcrystalline","level":2,"score":0.8469650149345398},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7069056034088135},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6597762107849121},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.6255555748939514},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6200910806655884},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5839254856109619},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.5045357942581177},{"id":"https://openalex.org/C125287762","wikidata":"https://www.wikidata.org/wiki/Q1758948","display_name":"Absorption (acoustics)","level":2,"score":0.45808473229408264},{"id":"https://openalex.org/C160892712","wikidata":"https://www.wikidata.org/wiki/Q901559","display_name":"Fourier transform infrared spectroscopy","level":2,"score":0.45342397689819336},{"id":"https://openalex.org/C2993184922","wikidata":"https://www.wikidata.org/wiki/Q3960533","display_name":"Microcrystalline silicon","level":5,"score":0.4521215558052063},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.4448370039463043},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.389174222946167},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.36479371786117554},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.352556973695755},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.30493009090423584},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.2825341820716858},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.25967031717300415},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.23441556096076965},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19715023040771484},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1442376673221588},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.12532353401184082},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.23.179","doi":"https://doi.org/10.1143/jjap.23.179","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.23.179","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1965888759","https://openalex.org/W1999205613","https://openalex.org/W2022383910","https://openalex.org/W2028908562","https://openalex.org/W2051430376","https://openalex.org/W2056288794","https://openalex.org/W2057836242","https://openalex.org/W2063343737","https://openalex.org/W2069907632","https://openalex.org/W2088806214","https://openalex.org/W2165736948"],"related_works":["https://openalex.org/W2165123837","https://openalex.org/W2009517237","https://openalex.org/W2060034215","https://openalex.org/W2082304990","https://openalex.org/W2009868020","https://openalex.org/W2315739344","https://openalex.org/W2074760298","https://openalex.org/W1534683334","https://openalex.org/W2088151819","https://openalex.org/W2009135406"],"abstract_inverted_index":{"Structure":[0],"change":[1],"with":[2,20,38,62,79],"thickness":[3,42],"of":[4,6,40,65,75],"films":[5,50],"microcrystalline":[7,36],"silicon":[8],"prepared":[9],"by":[10,54],"reactive":[11,56],"sputtering":[12,57],"and":[13,24],"glow":[14],"discharge":[15],"techniques":[16],"has":[17],"been":[18],"investigated":[19],"transmission":[21],"electron":[22],"microscopes":[23],"a":[25,35,59],"Fourier":[26],"transform":[27],"infrared":[28],"spectrophotometer.":[29],"An":[30],"amorphous":[31],"state":[32],"changes":[33],"into":[34],"one":[37],"increase":[39],"the":[41,55,70,73,76],"from":[43],"10":[44],"to":[45,69,85],"100":[46],"nm.":[47],"Sufficiently":[48],"thick":[49],"(>0.4\u223c0.5":[51],"\u00b5m)":[52],"deposited":[53],"show":[58],"columnar":[60],"structure":[61],"an":[63],"orientation":[64,74],"microcrystals":[66,77],"{110}":[67],"parallel":[68],"substrate.":[71],"As":[72],"develops":[78],"thickness,":[80],"IR":[81],"absorption":[82],"bands":[83],"due":[84],"Si\u2013H":[86],"stretching":[87],"become":[88],"sharper.":[89]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-09-25T08:18:29.962427","created_date":"2016-06-24T00:00:00"}