{"id":"https://openalex.org/W2015200280","doi":"https://doi.org/10.1063/1.4768269","title":"Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate","display_name":"Metastable ultrathin crystal in thermally grown SiO2 film on Si substrate","publication_year":2012,"publication_date":"2012-11-12","ids":{"openalex":"https://openalex.org/W2015200280","doi":"https://doi.org/10.1063/1.4768269","mag":"2015200280"},"language":"en","primary_location":{"id":"doi:10.1063/1.4768269","doi":"https://doi.org/10.1063/1.4768269","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4768269","pdf_url":null,"source":{"id":"https://openalex.org/S189917590","display_name":"AIP Advances","issn_l":"2158-3226","issn":["2158-3226"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","jufo-1","ki-jl-1","norway-1"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"AIP Advances","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1063/1.4768269","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5013335201","display_name":"Koji Kimoto","orcid":"https://orcid.org/0000-0002-3927-0492","observed_orcids":["https://orcid.org/0000-0002-3927-0492"]},"institutions":[{"id":"https://openalex.org/I205401836","display_name":"National Institute for Materials Science","ror":"https://ror.org/026v1ze26","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205401836"]},{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Kimoto","raw_affiliation_strings":["National Institute for Materials Science 1 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan","Research Acceleration Program 2 , Japan Science and Technology Agency, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute for Materials Science 1 , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan","institution_ids":["https://openalex.org/I205401836"]},{"raw_affiliation_string":"Research Acceleration Program 2 , Japan Science and Technology Agency, Japan","institution_ids":["https://openalex.org/I4210086780"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016804701","display_name":"Hiroki Tanaka","orcid":"https://orcid.org/0000-0002-8809-7147","observed_orcids":["https://orcid.org/0000-0002-8809-7147"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroki Tanaka","raw_affiliation_strings":["Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069067965","display_name":"Daisuke Matsushita","orcid":"https://orcid.org/0000-0002-6765-9366","observed_orcids":["https://orcid.org/0000-0002-6765-9366"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Daisuke Matsushita","raw_affiliation_strings":["Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069341139","display_name":"Kosuke Tatsumura","orcid":"https://orcid.org/0000-0003-0511-443X","observed_orcids":["https://orcid.org/0000-0003-0511-443X"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kosuke Tatsumura","raw_affiliation_strings":["Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109083965","display_name":"Shiro Takeno","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shiro Takeno","raw_affiliation_strings":["Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate R&D Center 3 , Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1350,"currency":"USD","value_usd":1350},"apc_paid":{"value":1350,"currency":"USD","value_usd":1350},"fwci":0.4085,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.67606089,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"2","issue":"4","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6528000235557556,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6528000235557556,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10857","display_name":"Advanced Electron Microscopy Techniques and Applications","score":0.2639000117778778,"subfield":{"id":"https://openalex.org/subfields/1315","display_name":"Structural Biology"},"field":{"id":"https://openalex.org/fields/13","display_name":"Biochemistry, Genetics and Molecular Biology"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T12039","display_name":"Electron and X-Ray Spectroscopy Techniques","score":0.02500000037252903,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-dioxide-thin-films","display_name":"SiO2 thin films","score":0.6959999799728394},{"id":"https://openalex.org/keywords/si-sio2-interface","display_name":"Si/SiO2 interface","score":0.7789999842643738},{"id":"https://openalex.org/keywords/atomic-structure","display_name":"atomic structure","score":0.6340000033378601},{"id":"https://openalex.org/keywords/electron-irradiation-damage","display_name":"electron irradiation damage","score":0.7139999866485596},{"id":"https://openalex.org/keywords/vitrification","display_name":"vitrification","score":0.9259999990463257},{"id":"https://openalex.org/keywords/surface-oxide-layer","display_name":"surface oxide layer","score":0.8029999732971191},{"id":"https://openalex.org/keywords/crystal-structure","display_name":"crystal structure","score":0.5410000085830688}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.8308044672012329},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7616766691207886},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.7343629598617554},{"id":"https://openalex.org/C89464430","wikidata":"https://www.wikidata.org/wiki/Q849516","display_name":"Metastability","level":2,"score":0.704947829246521},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.5525757670402527},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.5375502109527588},{"id":"https://openalex.org/C26771246","wikidata":"https://www.wikidata.org/wiki/Q321095","display_name":"Scanning electron microscope","level":2,"score":0.5288834571838379},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.48541077971458435},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4734976887702942},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.42909082770347595},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.4041132926940918},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37895679473876953},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2676311135292053},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16047725081443787},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11861521005630493},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.4768269","doi":"https://doi.org/10.1063/1.4768269","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4768269","pdf_url":null,"source":{"id":"https://openalex.org/S189917590","display_name":"AIP Advances","issn_l":"2158-3226","issn":["2158-3226"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","jufo-1","ki-jl-1","norway-1"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"AIP Advances","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:54d226cd5f68489eaac04c492ae8f05c","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/54d226cd5f68489eaac04c492ae8f05c","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"AIP Advances, Vol 2, Iss 4, Pp 042144-042144-5 (2012)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1063/1.4768269","doi":"https://doi.org/10.1063/1.4768269","is_oa":true,"landing_page_url":"https://doi.org/10.1063/1.4768269","pdf_url":null,"source":{"id":"https://openalex.org/S189917590","display_name":"AIP Advances","issn_l":"2158-3226","issn":["2158-3226"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","jufo-1","ki-jl-1","norway-1"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"AIP Advances","raw_type":"journal-article"},"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1487069997","https://openalex.org/W1490112615","https://openalex.org/W1738704394","https://openalex.org/W1967444867","https://openalex.org/W1971329685","https://openalex.org/W1972509915","https://openalex.org/W1976021383","https://openalex.org/W1981341546","https://openalex.org/W2000379230","https://openalex.org/W2015200280","https://openalex.org/W2016518480","https://openalex.org/W2046685979","https://openalex.org/W2049949177","https://openalex.org/W2057037833","https://openalex.org/W2058653554","https://openalex.org/W2070059498","https://openalex.org/W2070622136","https://openalex.org/W2085718414","https://openalex.org/W2091629726","https://openalex.org/W2092921992","https://openalex.org/W2093914900","https://openalex.org/W2099388236","https://openalex.org/W2151365450","https://openalex.org/W2161588623","https://openalex.org/W2247376849","https://openalex.org/W2273886880"],"related_works":["https://openalex.org/W4307107610","https://openalex.org/W3213627526","https://openalex.org/W4226159838","https://openalex.org/W3138976155","https://openalex.org/W1992748572","https://openalex.org/W3102066851","https://openalex.org/W2082939555","https://openalex.org/W2088012056","https://openalex.org/W2790243943","https://openalex.org/W2934478469"],"abstract_inverted_index":{"A":[0],"silicon":[1,6,46],"dioxide":[2],"film":[3],"on":[4],"a":[5,39,45,69],"substrate":[7],"is":[8],"the":[9,23,58],"most":[10],"essential":[11],"element":[12],"in":[13,52],"semiconductor":[14],"devices":[15],"and":[16],"various":[17,73],"advanced":[18],"materials.":[19],"We":[20,36],"have":[21,37],"elucidated":[22],"atomic":[24],"structure":[25],"of":[26,72],"SiO2":[27,42],"films":[28],"using":[29],"low-dose":[30],"scanning":[31],"transmission":[32],"electron":[33,62],"microscopy":[34],"(STEM).":[35],"visualized":[38],"metastable":[40],"crystalline":[41],"layer":[43],"near":[44],"substrate,":[47],"which":[48],"was":[49],"not":[50],"revealed":[51],"previous":[53],"studies":[54],"probably":[55],"due":[56],"to":[57],"vitrification":[59],"caused":[60],"by":[61],"irradiation.":[63],"Our":[64],"experimental":[65],"results":[66],"also":[67],"suggest":[68],"crystallographic":[70],"nature":[71],"surface":[74],"oxides.":[75]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-08-18T07:49:30.821534","created_date":"2016-06-24T00:00:00"}