{"id":"https://openalex.org/W2015167151","doi":"https://doi.org/10.1063/1.1322633","title":"Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs","display_name":"Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs","publication_year":2000,"publication_date":"2000-11-06","ids":{"openalex":"https://openalex.org/W2015167151","doi":"https://doi.org/10.1063/1.1322633","mag":"2015167151"},"language":"en","primary_location":{"id":"doi:10.1063/1.1322633","doi":"https://doi.org/10.1063/1.1322633","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1322633","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002941969","display_name":"Ikuo Suemune","orcid":"https://orcid.org/0000-0002-9967-6865","observed_orcids":["https://orcid.org/0000-0002-9967-6865"]},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]},{"id":"https://openalex.org/I4405286026","display_name":"Research Institute for Electronic Science, Hokkaido University","ror":"https://ror.org/00z8a5a73","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205349734","https://openalex.org/I4405286026"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"I. Suemune","raw_affiliation_strings":["Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812,\u2009Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812,\u2009Japan","institution_ids":["https://openalex.org/I205349734","https://openalex.org/I4405286026"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113736461","display_name":"Katsuhiro Uesugi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I205349734","display_name":"Hokkaido University","ror":"https://ror.org/02e16g702","country_code":"JP","type":"education","lineage":["https://openalex.org/I205349734"]},{"id":"https://openalex.org/I4405286026","display_name":"Research Institute for Electronic Science, Hokkaido University","ror":"https://ror.org/00z8a5a73","country_code":"JP","type":"facility","lineage":["https://openalex.org/I205349734","https://openalex.org/I4405286026"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Uesugi","raw_affiliation_strings":["Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812,\u2009Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812,\u2009Japan","institution_ids":["https://openalex.org/I205349734","https://openalex.org/I4405286026"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044549907","display_name":"W. Walukiewicz","orcid":"https://orcid.org/0000-0001-9936-5234","observed_orcids":["https://orcid.org/0000-0001-9936-5234"]},"institutions":[{"id":"https://openalex.org/I148283060","display_name":"Lawrence Berkeley National Laboratory","ror":"https://ror.org/02jbv0t02","country_code":"US","type":"facility","lineage":["https://openalex.org/I1330989302","https://openalex.org/I148283060","https://openalex.org/I39565521"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Walukiewicz","raw_affiliation_strings":["Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California\u200994720"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California\u200994720","institution_ids":["https://openalex.org/I148283060"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.7974,"has_fulltext":false,"cited_by_count":123,"citation_normalized_percentile":{"value":0.98412365,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"77","issue":"19","first_page":"3021","last_page":"3023"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.4702000021934509,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.4702000021934509,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.4629000127315521,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.02630000002682209,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ganas-alloys","display_name":"GaNAs alloys","score":0.8299999833106995},{"id":"https://openalex.org/keywords/nitrogen-substitution","display_name":"nitrogen substitution","score":0.5619999766349792},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.746999979019165},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.9240000247955322},{"id":"https://openalex.org/keywords/band-anticrossing-model","display_name":"band anticrossing model","score":0.8600000143051147},{"id":"https://openalex.org/keywords/extended-states","display_name":"extended states","score":0.781000018119812},{"id":"https://openalex.org/keywords/absorption-edge","display_name":"absorption edge","score":0.7649999856948853},{"id":"https://openalex.org/keywords/gainnas","display_name":"GaInNAs","score":0.9120000004768372},{"id":"https://openalex.org/keywords/iii-v-semiconductors","display_name":"III-V semiconductors","score":0.7089999914169312}],"concepts":[{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.7276504635810852},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.6740586757659912},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.5971105694770813},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5931934714317322},{"id":"https://openalex.org/C50792271","wikidata":"https://www.wikidata.org/wiki/Q332846","display_name":"Absorption edge","level":3,"score":0.5928012728691101},{"id":"https://openalex.org/C2780026712","wikidata":"https://www.wikidata.org/wiki/Q37756","display_name":"Alloy","level":2,"score":0.5359732508659363},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.5091332793235779},{"id":"https://openalex.org/C125287762","wikidata":"https://www.wikidata.org/wiki/Q1758948","display_name":"Absorption (acoustics)","level":2,"score":0.500981330871582},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4815014600753784},{"id":"https://openalex.org/C131584629","wikidata":"https://www.wikidata.org/wiki/Q4308705","display_name":"Coupling (piping)","level":2,"score":0.4715314507484436},{"id":"https://openalex.org/C125469278","wikidata":"https://www.wikidata.org/wiki/Q806380","display_name":"Electronic band structure","level":2,"score":0.4704788327217102},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2943797707557678},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.15201443433761597},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1143045723438263},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1322633","doi":"https://doi.org/10.1063/1.1322633","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1322633","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1535136286","https://openalex.org/W1679482701","https://openalex.org/W1969647604","https://openalex.org/W1977974835","https://openalex.org/W1979670608","https://openalex.org/W1988711232","https://openalex.org/W1996028381","https://openalex.org/W2001137570","https://openalex.org/W2025335929","https://openalex.org/W2029397437","https://openalex.org/W2032074790","https://openalex.org/W2037315876","https://openalex.org/W2068295395","https://openalex.org/W2071615235","https://openalex.org/W2085395832","https://openalex.org/W2157191586","https://openalex.org/W2322452020"],"related_works":["https://openalex.org/W2025335929","https://openalex.org/W1556942888","https://openalex.org/W2899787567","https://openalex.org/W2031978665","https://openalex.org/W1640239375","https://openalex.org/W2028967339","https://openalex.org/W1939214237","https://openalex.org/W2070957908","https://openalex.org/W2048040247","https://openalex.org/W2071217530"],"abstract_inverted_index":{"We":[0,69],"have":[1],"observed":[2],"a":[3,35],"significant":[4],"reduction":[5],"in":[6,14,24,83],"the":[7,11,27,38,47,58,62,66,72,76,80],"temperature":[8,63,77],"dependence":[9,64,78],"of":[10,26,37,42,51,65,79],"absorption-edge":[12,67],"energy":[13],"GaNxAs1\u2212x":[15],"alloys":[16],"with":[17],"x<0.04.":[18],"The":[19,53],"effect":[20],"has":[21],"been":[22],"analyzed":[23],"terms":[25],"recently":[28],"introduced":[29],"band":[30],"anticrossing":[31],"model":[32,54],"that":[33,74],"considers":[34],"coupling":[36],"temperature-independent":[39],"localized":[40],"states":[41,50],"substitutional":[43],"nitrogen":[44],"atoms":[45],"and":[46,61,85],"temperature-dependent":[48],"extended":[49],"GaAs.":[52],"explains":[55],"very":[56],"well":[57],"alloy":[59],"composition":[60],"energy.":[68],"also":[70],"compare":[71],"parameters":[73],"determine":[75],"band-gap":[81],"energies":[82],"GaNAs":[84],"GaInNAs":[86],"alloys.":[87]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":2},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":4}],"updated_date":"2026-10-31T12:09:11.096373","created_date":"2016-06-24T00:00:00"}