{"id":"https://openalex.org/W2015050844","doi":"https://doi.org/10.7567/jjap.53.04ec18","title":"Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells","display_name":"Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells","publication_year":2014,"publication_date":"2014-03-04","ids":{"openalex":"https://openalex.org/W2015050844","doi":"https://doi.org/10.7567/jjap.53.04ec18","mag":"2015050844"},"language":"en","primary_location":{"id":"doi:10.7567/jjap.53.04ec18","doi":"https://doi.org/10.7567/jjap.53.04ec18","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.53.04ec18","pdf_url":"https://iopscience.iop.org/article/10.7567/JJAP.53.04EC18/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.7567/JJAP.53.04EC18/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064075919","display_name":"T. Mizutani","orcid":"https://orcid.org/0000-0002-2358-3945","observed_orcids":["https://orcid.org/0000-0002-2358-3945"]},"institutions":[{"id":"https://openalex.org/I4405287318","display_name":"Institute of Industrial Science, The University of Tokyo","ror":"https://ror.org/04t6zpd80","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405287318","https://openalex.org/I74801974"]},{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoko Mizutani","raw_affiliation_strings":["Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan","institution_ids":["https://openalex.org/I4405287318","https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089307554","display_name":"Y. Yamamoto","orcid":"https://orcid.org/0000-0003-0582-1505","observed_orcids":["https://orcid.org/0000-0003-0582-1505"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yoshiki Yamamoto","raw_affiliation_strings":["Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036578908","display_name":"Hideki Makiyama","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hideki Makiyama","raw_affiliation_strings":["Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008563407","display_name":"Hirofumi Shinohara","orcid":"https://orcid.org/0000-0001-5589-8397","observed_orcids":["https://orcid.org/0000-0001-5589-8397"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hirofumi Shinohara","raw_affiliation_strings":["Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030385795","display_name":"Toshiaki Iwamatsu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Toshiaki Iwamatsu","raw_affiliation_strings":["Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086416593","display_name":"Hidekazu Oda","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hidekazu Oda","raw_affiliation_strings":["Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027073254","display_name":"Nobuyuki Sugii","orcid":"https://orcid.org/0000-0001-8006-8854","observed_orcids":["https://orcid.org/0000-0001-8006-8854"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Nobuyuki Sugii","raw_affiliation_strings":["Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Low-power Electronics Association and Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091874162","display_name":"Toshiro Hiramoto","orcid":"https://orcid.org/0000-0001-9469-2631","observed_orcids":["https://orcid.org/0000-0001-9469-2631"]},"institutions":[{"id":"https://openalex.org/I4405287318","display_name":"Institute of Industrial Science, The University of Tokyo","ror":"https://ror.org/04t6zpd80","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405287318","https://openalex.org/I74801974"]},{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiro Hiramoto","raw_affiliation_strings":["Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Industrial Science, University of Tokyo, Meguro, Tokyo 153-8505, Japan","institution_ids":["https://openalex.org/I4405287318","https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":1.0355,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.78022324,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"53","issue":"4S","first_page":"04EC18","last_page":"04EC18"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8759999871253967,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8759999871253967,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.07980000227689743,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.03970000147819519,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-voltage-variation","display_name":"threshold voltage variation","score":0.9800000190734863},{"id":"https://openalex.org/keywords/low-voltage-operation","display_name":"low-voltage operation","score":0.765999972820282},{"id":"https://openalex.org/keywords/low-power-operation","display_name":"low-power operation","score":0.7089999914169312}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9638895988464355},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6427047252655029},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5955761671066284},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.578851580619812},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.533973217010498},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.48466283082962036},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.4363909959793091},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.43435797095298767},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3574475049972534},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.27235838770866394},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.18308785557746887},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1828775703907013},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0948968231678009}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/jjap.53.04ec18","doi":"https://doi.org/10.7567/jjap.53.04ec18","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.53.04ec18","pdf_url":"https://iopscience.iop.org/article/10.7567/JJAP.53.04EC18/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.7567/jjap.53.04ec18","doi":"https://doi.org/10.7567/jjap.53.04ec18","is_oa":true,"landing_page_url":"https://doi.org/10.7567/jjap.53.04ec18","pdf_url":"https://iopscience.iop.org/article/10.7567/JJAP.53.04EC18/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321679","display_name":"Ministry of Economy, Trade and Industry","ror":"https://ror.org/055tm7f07"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2015050844.pdf","grobid_xml":"https://content.openalex.org/works/W2015050844.grobid-xml"},"referenced_works_count":32,"referenced_works":["https://openalex.org/W1537798744","https://openalex.org/W1972898571","https://openalex.org/W1987366127","https://openalex.org/W1987449940","https://openalex.org/W1995627170","https://openalex.org/W2018831138","https://openalex.org/W2020875745","https://openalex.org/W2023502960","https://openalex.org/W2032441680","https://openalex.org/W2040384885","https://openalex.org/W2046029797","https://openalex.org/W2046304309","https://openalex.org/W2079427082","https://openalex.org/W2082329825","https://openalex.org/W2083678929","https://openalex.org/W2088950817","https://openalex.org/W2094612467","https://openalex.org/W2108742543","https://openalex.org/W2110538280","https://openalex.org/W2115073796","https://openalex.org/W2121987784","https://openalex.org/W2128125626","https://openalex.org/W2128805857","https://openalex.org/W2129144647","https://openalex.org/W2140823559","https://openalex.org/W2142718365","https://openalex.org/W2144693175","https://openalex.org/W2146838309","https://openalex.org/W2148551743","https://openalex.org/W2168101540","https://openalex.org/W2312194337","https://openalex.org/W2545471485"],"related_works":["https://openalex.org/W2470774941","https://openalex.org/W2612317063","https://openalex.org/W2736692838","https://openalex.org/W2048723454","https://openalex.org/W2535994487","https://openalex.org/W2581507972","https://openalex.org/W4386489819","https://openalex.org/W2134508938","https://openalex.org/W4200484942","https://openalex.org/W3152266199"],"abstract_inverted_index":{"The":[0,61,79],"minimum":[1],"operation":[2,95],"voltage":[3,94],"(V":[4],"min)":[5],"of":[6,26,47,56,63,66,85,100],"intrinsic":[7],"channel":[8],"fully":[9],"depleted":[10],"(FD)":[11],"silicon-on-thin-buried-oxide":[12],"(SOTB)":[13],"static":[14],"random":[15],"access":[16],"memory":[17],"(SRAM)":[18],"cells":[19,30,52,73,88],"are":[20,74],"measured":[21,76],"and":[22,70,77,92],"compared":[23],"with":[24],"those":[25],"conventional":[27],"bulk":[28,59,71],"SRAM":[29,51,72,87],"in":[31],"order":[32],"to":[33],"directly":[34],"compare":[35],"the":[36,43],"worst":[37,44],"cells.":[38,60],"It":[39],"is":[40,53],"confirmed":[41],"that":[42,55],"V":[45,64,102],"min":[46,65],"1":[48,57],"kbit":[49,58,68],"SOTB":[50,69,86],"half":[54],"distribution":[62],"48":[67],"also":[75],"compared.":[78],"results":[80],"show":[81],"a":[82],"great":[83],"advantage":[84],"for":[89],"lower":[90,93],"power":[91],"upon":[96],"introducing":[97],"SOTB,":[98],"because":[99],"reduced":[101],"TH":[103],"variability.":[104]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":3},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}