{"id":"https://openalex.org/W2015014649","doi":"https://doi.org/10.1016/j.physe.2004.07.002","title":"The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures","display_name":"The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures","publication_year":2004,"publication_date":"2004-10-21","ids":{"openalex":"https://openalex.org/W2015014649","doi":"https://doi.org/10.1016/j.physe.2004.07.002","mag":"2015014649"},"language":"en","primary_location":{"id":"doi:10.1016/j.physe.2004.07.002","doi":"https://doi.org/10.1016/j.physe.2004.07.002","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.physe.2004.07.002","pdf_url":null,"source":{"id":"https://openalex.org/S23074404","display_name":"Physica E Low-dimensional Systems and Nanostructures","issn_l":"1386-9477","issn":["1386-9477","1873-1759"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Physica E: Low-dimensional Systems and Nanostructures","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010517177","display_name":"Asghar Asgari","orcid":"https://orcid.org/0000-0002-1719-4206","observed_orcids":["https://orcid.org/0000-0002-1719-4206"]},"institutions":[{"id":"https://openalex.org/I41832843","display_name":"University of Tabriz","ror":"https://ror.org/01papkj44","country_code":"IR","type":"education","lineage":["https://openalex.org/I41832843"]}],"countries":["IR"],"is_corresponding":true,"raw_author_name":"A. Asgari","raw_affiliation_strings":["Research Institute of Applied Physics, Tabriz University, Tabriz 51665-163, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of Applied Physics, Tabriz University, Tabriz 51665-163, Iran","institution_ids":["https://openalex.org/I41832843"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111663664","display_name":"Manoochehr Kalafi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I41832843","display_name":"University of Tabriz","ror":"https://ror.org/01papkj44","country_code":"IR","type":"education","lineage":["https://openalex.org/I41832843"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"M. Kalafi","raw_affiliation_strings":["Research Institute of Applied Physics, Tabriz University, Tabriz 51665-163, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of Applied Physics, Tabriz University, Tabriz 51665-163, Iran","institution_ids":["https://openalex.org/I41832843"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5041714978","display_name":"L. Faraone","orcid":"https://orcid.org/0000-0002-3087-7079","observed_orcids":["https://orcid.org/0000-0002-3087-7079"]},"institutions":[{"id":"https://openalex.org/I177877127","display_name":"The University of Western Australia","ror":"https://ror.org/047272k79","country_code":"AU","type":"education","lineage":["https://openalex.org/I177877127"]}],"countries":["AU"],"is_corresponding":false,"raw_author_name":"L. Faraone","raw_affiliation_strings":["School of Electrical, Electronic and Computer Engineering, The University of Western, Australia, Crawley, WA 6009, Australia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Electronic and Computer Engineering, The University of Western, Australia, Crawley, WA 6009, Australia","institution_ids":["https://openalex.org/I177877127"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5010517177"],"corresponding_institution_ids":["https://openalex.org/I41832843"],"apc_list":{"value":3640,"currency":"USD","value_usd":3640},"apc_paid":null,"fwci":0.9813,"has_fulltext":false,"cited_by_count":46,"citation_normalized_percentile":{"value":0.7365362,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"25","issue":"4","first_page":"431","last_page":"437"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/two-dimensional-electron-gas-density","display_name":"two-dimensional electron gas density","score":0.9160000085830688},{"id":"https://openalex.org/keywords/algan-barrier-layer","display_name":"AlGaN barrier","score":0.8650000095367432},{"id":"https://openalex.org/keywords/al-mole-fraction","display_name":"Al mole fraction","score":0.7549999952316284},{"id":"https://openalex.org/keywords/barrier-layer-thickness","display_name":"barrier layer thickness","score":0.843999981880188},{"id":"https://openalex.org/keywords/numerical-simulation","display_name":"numerical simulation","score":0.5979999899864197}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8032722473144531},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7558557987213135},{"id":"https://openalex.org/C2779833192","wikidata":"https://www.wikidata.org/wiki/Q17015866","display_name":"Barrier layer","level":3,"score":0.7519958019256592},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6677862405776978},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4575985074043274},{"id":"https://openalex.org/C125485243","wikidata":"https://www.wikidata.org/wiki/Q905186","display_name":"Electron density","level":3,"score":0.45337554812431335},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4177165627479553},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3599354326725006},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16683879494667053},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/j.physe.2004.07.002","doi":"https://doi.org/10.1016/j.physe.2004.07.002","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.physe.2004.07.002","pdf_url":null,"source":{"id":"https://openalex.org/S23074404","display_name":"Physica E Low-dimensional Systems and Nanostructures","issn_l":"1386-9477","issn":["1386-9477","1873-1759"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Physica E: Low-dimensional Systems and Nanostructures","raw_type":"journal-article"},{"id":"pmh:oai:pure.atira.dk:publications/986e8efd-1010-4ff2-b960-3f4ce4dc0f07","doi":null,"is_oa":false,"landing_page_url":"https://research-repository.uwa.edu.au/en/publications/986e8efd-1010-4ff2-b960-3f4ce4dc0f07","pdf_url":null,"source":{"id":"https://openalex.org/S4306402492","display_name":"UWA Profiles and Research Repository (UWA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I177877127","host_organization_name":"The University of Western Australia","host_organization_lineage":["https://openalex.org/I177877127"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Asgari, A, Kalafi, M & Faraone, L 2005, 'The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures', Physica E: Low-Dimensional Systems and Nanostructures, vol. 25, no. 4, pp. 431-437. https://doi.org/10.1016/j.physe.2004.07.002","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320334704","display_name":"Australian Research Council","ror":"https://ror.org/05mmh0f86"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1967340930","https://openalex.org/W1978928307","https://openalex.org/W1979715967","https://openalex.org/W2017367659","https://openalex.org/W2048064556","https://openalex.org/W2049825041","https://openalex.org/W2053291496","https://openalex.org/W2073280081","https://openalex.org/W2079406743","https://openalex.org/W2157738319","https://openalex.org/W2166183827","https://openalex.org/W2326972913"],"related_works":["https://openalex.org/W2325852434","https://openalex.org/W2774076431","https://openalex.org/W2185151490","https://openalex.org/W2073280081","https://openalex.org/W2056042900","https://openalex.org/W2033276063","https://openalex.org/W4226089344","https://openalex.org/W1964094979","https://openalex.org/W1984876212","https://openalex.org/W2523991802"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":3}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}