{"id":"https://openalex.org/W2014532759","doi":"https://doi.org/10.1117/12.2085927","title":"Novel EUV resist development for sub-14nm half pitch","display_name":"Novel EUV resist development for sub-14nm half pitch","publication_year":2015,"publication_date":"2015-04-06","ids":{"openalex":"https://openalex.org/W2014532759","doi":"https://doi.org/10.1117/12.2085927","mag":"2014532759"},"language":"en","primary_location":{"id":"doi:10.1117/12.2085927","doi":"https://doi.org/10.1117/12.2085927","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.2085927","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000712566","display_name":"Masafumi Hori","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masafumi Hori","raw_affiliation_strings":["JSR Micro N.V. (Belgium)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Micro N.V. (Belgium)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050268638","display_name":"Takehiko Naruoka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134490","display_name":"JSR (Japan)","ror":"https://ror.org/03ks0tt05","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210134490"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takehiko Naruoka","raw_affiliation_strings":["JSR Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Corp. (Japan)","institution_ids":["https://openalex.org/I4210134490"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053172633","display_name":"Hisashi Nakagawa","orcid":"https://orcid.org/0000-0002-4753-5286","observed_orcids":["https://orcid.org/0000-0002-4753-5286"]},"institutions":[{"id":"https://openalex.org/I4210134490","display_name":"JSR (Japan)","ror":"https://ror.org/03ks0tt05","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210134490"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hisashi Nakagawa","raw_affiliation_strings":["JSR Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Corp. (Japan)","institution_ids":["https://openalex.org/I4210134490"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111634342","display_name":"Tomohisa Fujisawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134490","display_name":"JSR (Japan)","ror":"https://ror.org/03ks0tt05","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210134490"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomohisa Fujisawa","raw_affiliation_strings":["JSR Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Corp. (Japan)","institution_ids":["https://openalex.org/I4210134490"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005803177","display_name":"Takakazu Kimoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134490","display_name":"JSR (Japan)","ror":"https://ror.org/03ks0tt05","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210134490"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takakazu Kimoto","raw_affiliation_strings":["JSR Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Corp. (Japan)","institution_ids":["https://openalex.org/I4210134490"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075834112","display_name":"Motohiro Shiratani","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134490","display_name":"JSR (Japan)","ror":"https://ror.org/03ks0tt05","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210134490"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Motohiro Shiratani","raw_affiliation_strings":["JSR Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Corp. (Japan)","institution_ids":["https://openalex.org/I4210134490"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103626167","display_name":"Tomoki Nagai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134490","display_name":"JSR (Japan)","ror":"https://ror.org/03ks0tt05","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210134490"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoki Nagai","raw_affiliation_strings":["JSR Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Corp. (Japan)","institution_ids":["https://openalex.org/I4210134490"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111746647","display_name":"Ramakrishnan Ayothi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ramakrishnan Ayothi","raw_affiliation_strings":["JSR Micro, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Micro, Inc. (United States)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066136767","display_name":"Yoshi Hishiro","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yoshi Hishiro","raw_affiliation_strings":["JSR Micro, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Micro, Inc. (United States)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020657962","display_name":"Kenji Hoshiko","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kenji Hoshiko","raw_affiliation_strings":["JSR Micro N.V. (Belgium)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Micro N.V. (Belgium)","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110767046","display_name":"Toru Kimura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210134490","display_name":"JSR (Japan)","ror":"https://ror.org/03ks0tt05","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210134490"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toru Kimura","raw_affiliation_strings":["JSR Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"JSR Corp. (Japan)","institution_ids":["https://openalex.org/I4210134490"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":9.1589,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.99048176,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"9422","issue":null,"first_page":"94220P","last_page":"94220P"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12570","display_name":"Photopolymerization techniques and applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/1605","display_name":"Organic Chemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11183","display_name":"Advanced X-ray Imaging Techniques","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3108","display_name":"Radiation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/euv-resist","display_name":"EUV resist","score":0.8009999990463257},{"id":"https://openalex.org/keywords/chemically-amplified-resists","display_name":"chemically amplified resists","score":0.9150000214576721},{"id":"https://openalex.org/keywords/line-edge-roughness","display_name":"line edge roughness","score":0.8479999899864197},{"id":"https://openalex.org/keywords/resist-sensitivity","display_name":"resist sensitivity","score":0.6399999856948853},{"id":"https://openalex.org/keywords/photoacid-generator","display_name":"photoacid generator","score":0.7200000286102295},{"id":"https://openalex.org/keywords/sensitizers","display_name":"sensitizers","score":0.9089999794960022},{"id":"https://openalex.org/keywords/7-nm-technology-node","display_name":"7nm technology node","score":0.7390000224113464},{"id":"https://openalex.org/keywords/semiconductor-patterning","display_name":"semiconductor patterning","score":0.5400000214576721}],"concepts":[{"id":"https://openalex.org/C162996421","wikidata":"https://www.wikidata.org/wiki/Q371965","display_name":"Extreme ultraviolet lithography","level":2,"score":0.9922287464141846},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.9610394239425659},{"id":"https://openalex.org/C146024833","wikidata":"https://www.wikidata.org/wiki/Q1385457","display_name":"Extreme ultraviolet","level":3,"score":0.8808034658432007},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.7809703350067139},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.715302050113678},{"id":"https://openalex.org/C94263209","wikidata":"https://www.wikidata.org/wiki/Q1076175","display_name":"Immersion lithography","level":4,"score":0.6009913086891174},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4979386329650879},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.4885193109512329},{"id":"https://openalex.org/C163581340","wikidata":"https://www.wikidata.org/wiki/Q1983848","display_name":"Next-generation lithography","level":5,"score":0.47854357957839966},{"id":"https://openalex.org/C2776628375","wikidata":"https://www.wikidata.org/wiki/Q4839229","display_name":"Back end of line","level":3,"score":0.45160919427871704},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.4502142071723938},{"id":"https://openalex.org/C138268822","wikidata":"https://www.wikidata.org/wiki/Q1051925","display_name":"Resolution (logic)","level":2,"score":0.4143924117088318},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3294355869293213},{"id":"https://openalex.org/C200274948","wikidata":"https://www.wikidata.org/wiki/Q256845","display_name":"Electron-beam lithography","level":4,"score":0.24955976009368896},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.22424852848052979},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.13484418392181396},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12542429566383362},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.05994895100593567},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.2085927","doi":"https://doi.org/10.1117/12.2085927","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.2085927","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2013519709","https://openalex.org/W2027253590","https://openalex.org/W2029874476","https://openalex.org/W2047544126","https://openalex.org/W2050297282","https://openalex.org/W2068006664","https://openalex.org/W2070776352","https://openalex.org/W2076968910","https://openalex.org/W2084572194","https://openalex.org/W2087599743","https://openalex.org/W6662810108","https://openalex.org/W6667506065"],"related_works":["https://openalex.org/W2783463970","https://openalex.org/W2610592356","https://openalex.org/W2309272641","https://openalex.org/W2068898653","https://openalex.org/W2004045510","https://openalex.org/W1978621375","https://openalex.org/W2897971701","https://openalex.org/W2312297224","https://openalex.org/W1967942382","https://openalex.org/W2921431214"],"abstract_inverted_index":{"Extreme":[0],"ultraviolet":[1],"(EUV)":[2],"lithography":[3,36,129],"has":[4],"emerged":[5],"as":[6],"a":[7],"promising":[8],"candidate":[9],"for":[10,26,37,64,133],"the":[11,17,38,47,61,68,147],"manufacturing":[12,41],"of":[13,34,42,49,71,120],"semiconductor":[14,43],"devices":[15,44],"at":[16],"sub-14nm":[18],"half":[19],"pitch":[20],"lines":[21],"and":[22,30,55,80,89,108,118,126,141,146],"spaces":[23],"(LS)":[24],"pattern":[25],"7":[27],"nm":[28,100],"node":[29],"beyond.":[31],"The":[32],"success":[33],"EUV":[35,65,128],"high":[39,53,81],"volume":[40],"depends":[45],"on":[46,136],"availability":[48],"suitable":[50],"resist":[51,66,94],"with":[52],"resolution":[54,73,107],"sensitivity.":[56],"It":[57],"is":[58,67],"well-known":[59],"that":[60,105],"key":[62],"challenge":[63],"simultaneous":[69],"requirement":[70],"ultrahigh":[72],"(R),":[74],"low":[75],"line":[76],"edge":[77],"roughness":[78],"(L)":[79],"sensitivity":[82,109],"(S).":[83],"In":[84],"this":[85],"paper,":[86],"we":[87],"investigated":[88],"developed":[90],"new":[91,134],"chemically":[92],"amplified":[93],"(CAR)":[95],"materials":[96],"to":[97],"achieve":[98],"sub-14":[99],"hp":[101],"resolution.":[102],"We":[103],"found":[104],"both":[106],"were":[110],"improved":[111],"simultaneously":[112],"by":[113],"controlling":[114],"acid":[115,121],"diffusion":[116],"length":[117],"efficiency":[119],"generation":[122],"using":[123],"novel":[124],"PAG":[125],"sensitizer.":[127],"evaluation":[130],"results":[131],"obtained":[132],"CAR":[135],"Micro":[137],"Exposure":[138],"Tool":[139],"(MET)":[140],"NXE3300":[142],"system":[143],"are":[144,149],"described":[145],"fundamentals":[148],"discussed.":[150]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":11},{"year":2015,"cited_by_count":3}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}