{"id":"https://openalex.org/W2014303683","doi":"https://doi.org/10.1016/s0022-0248(01)01521-4","title":"Strain relaxation and misfit dislocation in SiGe epilayers grown in micron size windows by MBE","display_name":"Strain relaxation and misfit dislocation in SiGe epilayers grown in micron size windows by MBE","publication_year":2001,"publication_date":"2001-11-01","ids":{"openalex":"https://openalex.org/W2014303683","doi":"https://doi.org/10.1016/s0022-0248(01)01521-4","mag":"2014303683"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(01)01521-4","doi":"https://doi.org/10.1016/s0022-0248(01)01521-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(01)01521-4","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108548639","display_name":"Hui Xiong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hui Xiong","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000523173","display_name":"Xiangjiu Zhang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiang-Jiu Zhang","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111655621","display_name":"Zuiming Jiang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zuiming Jiang","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050404679","display_name":"Jihuang Hu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jihuang Hu","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010158838","display_name":"Bin Shi","orcid":"https://orcid.org/0000-0003-3005-685X","observed_orcids":["https://orcid.org/0000-0003-3005-685X"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bin Shi","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101925108","display_name":"Xingfei Zhou","orcid":"https://orcid.org/0000-0002-1856-4969","observed_orcids":["https://orcid.org/0000-0002-1856-4969"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingfei Zhou","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102354634","display_name":"Weirong Jiang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weirong Jiang","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037334687","display_name":"Hu Dong-zhi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongzhi Hu","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108459290","display_name":"Yongliang Fan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yongliang Fan","raw_affiliation_strings":["Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China","institution_ids":["https://openalex.org/I24943067"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5000523173"],"corresponding_institution_ids":["https://openalex.org/I24943067"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":0.4864,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.59756177,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"233","issue":"1-2","first_page":"74","last_page":"81"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8910999894142151,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8910999894142151,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.07039999961853027,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.011500000022351742,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/strain-relaxation","display_name":"strain relaxation","score":0.9160000085830688},{"id":"https://openalex.org/keywords/sige-epilayers","display_name":"SiGe epilayers","score":0.9769999980926514},{"id":"https://openalex.org/keywords/si-sige-heterostructures","display_name":"Si/SiGe heterostructures","score":0.8029999732971191},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"molecular beam epitaxy","score":0.7070000171661377},{"id":"https://openalex.org/keywords/dislocation-density","display_name":"dislocation density","score":0.41499999165534973},{"id":"https://openalex.org/keywords/epitaxial-strain","display_name":"epitaxial strain","score":0.5049999952316284}],"concepts":[{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.8062094449996948},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7880143523216248},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6334361433982849},{"id":"https://openalex.org/C202974441","wikidata":"https://www.wikidata.org/wiki/Q2576844","display_name":"Stress relaxation","level":3,"score":0.603999137878418},{"id":"https://openalex.org/C2776029896","wikidata":"https://www.wikidata.org/wiki/Q3935810","display_name":"Relaxation (psychology)","level":2,"score":0.5844085216522217},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.5313568711280823},{"id":"https://openalex.org/C2778022156","wikidata":"https://www.wikidata.org/wiki/Q576145","display_name":"Strain (injury)","level":2,"score":0.49133315682411194},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.39082226157188416},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.3318917751312256},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.23636645078659058},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.19083738327026367},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.1892363429069519},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13888832926750183},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.050573378801345825},{"id":"https://openalex.org/C149912024","wikidata":"https://www.wikidata.org/wiki/Q462188","display_name":"Creep","level":2,"score":0.03572946786880493},{"id":"https://openalex.org/C77805123","wikidata":"https://www.wikidata.org/wiki/Q161272","display_name":"Social psychology","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C126322002","wikidata":"https://www.wikidata.org/wiki/Q11180","display_name":"Internal medicine","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0022-0248(01)01521-4","doi":"https://doi.org/10.1016/s0022-0248(01)01521-4","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(01)01521-4","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1975077637","https://openalex.org/W1976461998","https://openalex.org/W1977419538","https://openalex.org/W2014212116","https://openalex.org/W2055050381","https://openalex.org/W2072058805","https://openalex.org/W2073071130","https://openalex.org/W2328251996"],"related_works":["https://openalex.org/W2107743277","https://openalex.org/W2919862744","https://openalex.org/W2010789171","https://openalex.org/W4244429631","https://openalex.org/W1991227321","https://openalex.org/W2334571291","https://openalex.org/W2026755239","https://openalex.org/W2071987563","https://openalex.org/W3198148496","https://openalex.org/W2137916340"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-09T09:14:12.587421","created_date":"2016-06-24T00:00:00"}